STU6NA90
Abstract: No abstract text available
Text: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU6NA90 900 V <2Ω 5.8 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE
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STU6NA90
Max220
O-220,
O-220
STU6NA90
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SPP02N60S5
Abstract: 02n60s5
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
SPP02N60S5
02n60s5
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P3NA90FI
Abstract: P3NA90 P3NA STP3NA90 STP3NA90FI
Text: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P3NA90 ST P3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STP3NA90
STP3NA90FI
P3NA90
P3NA90FI
100oC
O-220
ISOWATT220
P3NA90FI
P3NA90
P3NA
STP3NA90
STP3NA90FI
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STP3NA90
Abstract: STP3NA90FI
Text: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STP3NA90
STP3NA90FI
100oC
O-220
ISOWATT220
STP3NA90
STP3NA90FI
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STP3NA90
Abstract: STP3NA90FI
Text: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI V DSS R DS on ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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STP3NA90
STP3NA90FI
100oC
O-220
ISOWATT220
STP3NA90
STP3NA90FI
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Q67040-S4181
Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
Q67040-S4181
02N60S5
Q67040-S4181
02N60
SPB02N60S5
SPP02N60S5
02N60S5
Q67040S4181
Q67040-S4212
Transistor 02N60S5
P-TO-263-3-2
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SPP02N60S5
Abstract: 02N60S5
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
SPP02N60S5
02N60S5
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Untitled
Abstract: No abstract text available
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1
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SPP02N60S5
PG-TO220
P-TO220-3-1
Q67040-S4181
02N60S5
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P-TO263-3-2
Abstract: Q67040-S4181 SPB02N60S5 SPP02N60S5
Text: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4181
Q67040-S4212
P-TO263-3-2
SPB02N60S5
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02n60s5
Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
Text: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances
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SPP02N60S5
SPB02N60S5
P-TO263-3-2
P-TO220-3-1
Q67040-S4181
02N60S5
02n60s5
Transistor 02N60S5
02N60
Q67040-S4212
SPB02N60S5
SPP02N60S5
P-TO263-3-2
Q67040-S4181
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03n60s5
Abstract: No abstract text available
Text: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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SPP03N60S5
SPB03N60S5
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4184
Q67040-S4197
03n60s5
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SPP02N60S5
Abstract: No abstract text available
Text: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances
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SPP02N60S5
P-TO220-3-1
PG-TO220-3-1
SPP02N60S5
PG-TO220-3-1
Q67040-S4181
02N60S5
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rjp6065
Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance
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J722
Abstract: IRF722FI 721F 723 voltage regulator internal diagram IRF720 IRF720FI IRF721 IRF721FI IRF722 IRF723
Text: 3DE D • 7^537 DQER7ÖC 1 S ■ ' ' T 73 c^ - \ \ / w T SGS-THOMSON S g S-THOMSON ' IRF 720/FI-721/FI IRF 722/FI-723/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vqss ^DS on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 fi 3.3 A 2.5 A IRF721 IRF721FI
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720/FI-721/FI
722/FI-723/FI
IRF720
IRF720FI
IRF721
IRF721FI
IRF722
IRF722FI
IRF723
IRF723FI
J722
721F
723 voltage regulator internal diagram
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Untitled
Abstract: No abstract text available
Text: INT200 Low-side Driver 10 Low-side Drive and High-side Control with Simultaneous Conduction Lockout POWER INTEGRATIONS, INC. Product Highlights 5 V CMOS Compatible Control Inputs • Com bines logic inputs for low and high-side drives • Schm idt-triggered inputs for noise imm unity
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INT200
INT201
SO-20
SO-16
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SC06140
Abstract: stp4n90fi STP4NA90 STP4NA90FI STP4N90 SC06-1
Text: _ 9 r z T S ^ 7# G S - T H O M S O 3 5 r 0 2 N £ t o ^ « ^ e m iig r a « ! 3 4 N > ^ 9 (^ S T P iN A 9 0 FI TYPE S TP4N A90 STP4N A 90FI • ■ . . . . . V dss RDS(on Id 900 V 900 V A A -fc. -&■ ¡0 so
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STP4NA90FI
STP4NA90
STP4NA90FI
SC06140
STP4N90FI
STP4NA90/FI
ISOWATT220
SC06140
stp4n90fi
STP4N90
SC06-1
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FS12UM-5
Abstract: FS12KM MARKING CODE mosfet FS16UM5 FS20KM-6 FS12KM-5 FS20UM-5 FS10UM-5 FS16KM-5 FS10KM-5
Text: K O N f llO r Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FO D TI D & t3 Selector Guide Discrete MOSFET - Medium Voitage FS Series MOSFETs (250 ~ 450V) Electrical Characteristics Maximum Ratings, Tc = 25°C
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O-220
O-220S
O-220FN
FS10UM-5
FS10VS-5
72R4L
FS12UM-5
FS12KM
MARKING CODE mosfet
FS16UM5
FS20KM-6
FS12KM-5
FS20UM-5
FS16KM-5
FS10KM-5
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transistor B 722
Abstract: Q 720 To220 Application of irf 720 720F transistor 721 ld 18 IRF722FI ld 33 G-722
Text: rZ Z IR F 7 2 0 / F I - 7 2 1 /F I i r f 7 2 2 /F I- 7 2 3 /F I S G S -T H O M S O N * • 7 #» M E M iiie r a M o e s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF720 IRF720FI VDSs 400 V 400 V RoS on 1.8 ß 1.8 fi 'o ‘ 3.3 A 2.5 A IRF721
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IRF720
IRF720FI
IRF721
IRF721FI
IRF722
IRF722FI
IRF723
IRF723FI
500ms
transistor B 722
Q 720 To220
Application of irf 720
720F
transistor 721
ld 18
ld 33
G-722
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M TO »« S T U 6 N A 90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA90 . rn . . . . . V dss RDS on Id 900 V < 2 Q 5.8 A TYPICAL R d s ( o ii) = 1 5 Q ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED
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STU6NA90
Max220TM
O-220,
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1XYS
Abstract: 1RL630 1rlz44 IRLZ20 1RFZ40 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Text: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Id (tnA) Coss Crss ft & m % Vg s =0 (max) ♦ t y p Vg s (V) (0) max Ciss *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF)
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Ta-25Â
IRFZ35
O-220AB
1RFZ40
IRFZ42
SSH6N70A
SSH7N12
SSH7N15
SSH8N12
1XYS
1RL630
1rlz44
IRLZ20
IRFZ44
IRH254
IRL510
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2-10P1B
Abstract: 2SK2733
Text: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Low Drain-Sorce ON Resistance
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2SK2733
2-10P1B
2SK2733
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Untitled
Abstract: No abstract text available
Text: INT202 Low-side Driver 1C Low-side Drive and High-side Control for Simultaneous Conduction POWER INTEGRATIONS, INC. Product Highlights 5 V CMOS Compatible Control Inputs • Combines logic inputs for low and high-side drives • Schmidt-triggered inputs for noise immunity
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INT202
INT201
sink/150
SO-20
SO-16
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TOPSWITCH DN-16
Abstract: No abstract text available
Text: TOP100-4 TOPSwitch Family POWER Three-terminal Off-line PWM Switch INTEGRATIONS, INC. Product Highlights Low Cost Replacement for Discrete Switchers • 20 to 50 few er com ponents - cuts cost, increases reliability • Source-connected tab and Controlled M O SFET tum -on
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OP100-4
SO-20
SO-16
TOPSWITCH DN-16
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Untitled
Abstract: No abstract text available
Text: SMP211 PWM Power Supply IC 85-265 VAC input Isolated, Regulated DC Output POWER INTEGRATIONS, INC. Product Highlights Integrated Power Switch and CMOS Controller • O utput pow er up to 10 W from rectified 220 V A C input, 5 W from rectified universal 85 to 265 V A C input
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SMP211
SO-20
SO-16
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