E5780
Abstract: R7400U AWG22 hv 102 R7400U-50 internal structure of ic 741
Text: PHOTOMULTlPLlER TUBE PRELIMINARY DATA MAR. 1998 R7400U-50 FEATURES High QE from 550 to 850nm Fast Time Response Compact GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material Structure
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R7400U-50
850nm
2856K)
S-164-40
TPMH1205E01
E5780
R7400U
AWG22
hv 102
R7400U-50
internal structure of ic 741
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R632-01
Abstract: R632 TOSHIBA IR-D80A
Text: PHOTOMULTlPLlER TUBES R632, R632- 01 S-1 Spectral Response QE 0.05% at 1.06 µm <R632-01> 19mm(3/4 Inch) Diameter, 10–stage, Head–On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode Minimum Effective Area Window Material
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R632-01>
Cathode11
S-164-40
TPMH1142E01
R632-01
R632
TOSHIBA IR-D80A
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5024x025
Abstract: 5024x P6009 PEB2255 siemens klein 1992 siemens GR 60 48 V 120 A siemens GR 60 EASY2255 FALC54 GR-1089-CORE
Text: Institute for Quality Engineering, Testing and Approvals Laboratory ÖN QE 11 "EMI and Overvoltage Protection" Order No.: HI56N Pages: 23 Enclosures: 0 Munich, 23.06.97 Test Report No.: HI56N01M Client: Siemens AG, HL EZM D NW AS Equipment under test: FALC-LH Evaluation-Board EASY2255 V1.1
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HI56N
HI56N01M
EASY2255
TR600-160,
GR-1089-CORE
5024x025
5024x
P6009
PEB2255
siemens klein 1992
siemens GR 60 48 V 120 A
siemens GR 60
FALC54
GR-1089-CORE
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Untitled
Abstract: No abstract text available
Text: SMJ34020A GRAPHICS SYSTEM PROCESSOR SGUS011D − APRIL 1991 − REVISED SEPTEMBER 2004 D D D D D D D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 A B C D E F G H J K L M N P R 132-PIN QUAD FLATPACK TOP VIEW 100 D 145-PIN GRID ARRAY PACKAGE ( TOP VIEW ) 1 99 33
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SMJ34020A
SGUS011D
145-Pin
132-Pin
SMJ34020A-32/
100-ns
32-Bit
512-Megabyte
SMJ34010
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Emcore solar cell
Abstract: EDWA InGaAs array 1550nm 100C multi-junction "solar cell" photoluminescence illumination
Text: TEMPERATURE DEPENDENT SPECTRAL RESPONSE MEASUREMENTS FOR III-V MULTI-JUNCTION SOLAR CELLS Daniel Aiken, Mark Stan, Chris Murray, Paul Sharps, Jenifer Hills, and Brad Clevenger Emcore Photovoltaics, 10420 Research Rd. SE, Albuquerque, NM 87123 ABSTRACT Temperature coefficients for the integrated current of
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R123-181.
Emcore solar cell
EDWA
InGaAs array 1550nm
100C
multi-junction "solar cell"
photoluminescence illumination
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C11701DK-40
Abstract: C11700DK-40 C11700 C11701 1/USB/C12137
Text: NEWS 01 2012 TM SYSTEMS PRODUCTS PAGE 28 World's first Gen. II sCMOS Camera: Hamamatsu presents ORCA-Flash4.0 SOLID STATE PRODUCTS PAGE 12 Thermopile Detectors for Energy Saving and Security ELECTRON TUBE PRODUCTS PAGE 25 New H11706 and H12056 PMT Modules with Internal Shutters
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H11706
H12056
C12200-321
T1126X,
T11722
S11670-01
S11151-2048
16-Channelax:
DE128228814
C11701DK-40
C11700DK-40
C11700
C11701
1/USB/C12137
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ortec 457
Abstract: PLP-01 canberra preamplifier irf 2205 TC-454 shg 850 LIDAR radar IRF 715 R5916U-50 410nm
Text: GATEABLE MICROCHANNEL PLATE PHOTOMULTIPLIER TUBE MCP-PMTs R5916U-50 SERIES Featuring Fast Gating Function with Improved Time Response and Switching Ratio FEATURES High Speed Gating by Low Supply Voltage (+10V) Gate Rise Time : 1 ns 1) Gate Width : 5 ns Fast Rise Time
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R5916U-50
TPMHB0244EA
TPMHB0245EB
20mV/div.
-3000V
S-164-40
TPMH1102E05
ortec 457
PLP-01
canberra preamplifier
irf 2205
TC-454
shg 850
LIDAR radar
IRF 715
410nm
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1029 bitemational 11»]Rectifier IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to
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10kHz)
IRGPH40M
O-247AC
C-470
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Untitled
Abstract: No abstract text available
Text: International [^Rectifier Provisional Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT c • Short circuit rated - 10|js @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPH40M
10kHz)
D2315c
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Untitled
Abstract: No abstract text available
Text: H A H A iif lT S U PIN S,LIC0N PHOTODIODE FOR YAG LASER DETECTION S3759 te c h n ic a l d ata FOR YAG LASER 1.06 jj . m DETCTION HIGH IR SENSITIVITY (QE 50% AT 1.06 u m), FAST RESPONSE (t*=26ns) LARGE SENSITIVE AREA (5mra dia.), TO-8 PACKAGE GENERAL RATINGS
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S3759
S-164-40
JUN/90
T-800
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S4753
Abstract: 0829
Text: H AM AM ATSU Si PIN Photodiode S4753-02 High-speed sensor for detecting blue and blue green laser FEATURES •W id e band width at low reverse voltage fc : 1.2 GHz V r = 5 V • High sensitivity at 400 nm to 530 nm QE: 88 % at 425 nm • Low dark currents pA Typ. (VR=5 V)
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S4753-02
Photo00.
S-164-40
KPIN1011E02
S4753
0829
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MRC031
Abstract: MRC051 BFS25A
Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low curren t consum ption PIN • Low noise figure DESCRIPTION C ode: N6 • Gold m etallization ensures e xcellent reliability • S O T 323 envelope. 3
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BFS25A
OT323
MBC870
OT323.
3FS25A
OT323
SC-70
MRC031
MRC051
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm 100341 Low Power 8-Bit Shift Register General Description The 100341 contains eight edge-triggered, D-type flip-flops with individual inputs Pn and outputs (Qn) for parallel op eration, and with serial inputs (Dn) and steering logic for bidi
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 202 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type ^CE h 1000V 12A BUP 202 Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67078-A4401-A2 Maximum Ratings
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O-220
Q67078-A4401-A2
023SbOS
GPT05155
235bD5
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Untitled
Abstract: No abstract text available
Text: Philips Components 100141 Document No. 853-0619 ECN No. 99800 4-Bit Universal Shift Register Date of Issue June 14,1990 Product Specification Status E C L Products IEC/IEEE SYMBOL PIN DESCRIPTION FEATURES •Typical propagation delay: 1.7ns •Typical supply current -lEE : 175mA
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175mA
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MG300H1UL1
Abstract: IL300-A il300a
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300H1UL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hpE=80 Min. (Ic=300A) . Low Saturation Voltage
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MG300H1UL1
1Z51C
MG300H1UL1
IL300-A
il300a
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ph40k
Abstract: No abstract text available
Text: International I«R Rectifier PD - 9 .1 5 7 8A IRG4 PH4 0 K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10[J.S, Vcc = 720V , T j = 125°C, Vg e = 1 5 V
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Untitled
Abstract: No abstract text available
Text: * SYNERGY S IN G L E S U P P LY I " PECl./TTL -TO-PECl. C ioch vVorns 3Y100S811 S E M IC O N D U C T O R FEATURES • PECL version of popular ECLinPS El 11 ■ Low skew ■ Guaranteed skew spec ■ V s b o u tp u t ■ TTL enable input ■ Selectable TTL or PECL clock input
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3Y100S811
1Q0S811
811ZC
J28-1
Z28-1
Z28-1
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Untitled
Abstract: No abstract text available
Text: 100341 Low Power 8-Bit Shift Register General Description Features The 100341 contains eight edge-triggered, D-type flip-flops with individual inputs Pn and outputs (Qn) for parallel oper ation, and with serial inputs (Dn) and steering logic for bidi
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TL/F/9800-7
TL/F/9800-8
TL/F/9880-9
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DIODE c802
Abstract: IRGNI115U06
Text: bitemational [ t o r Rectifier PD'"71 IRGNI115U06 “CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT VCE = 600V • Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGNI115U06
C-806
DIODE c802
IRGNI115U06
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C828 transistors
Abstract: c828 tr c828 tr c828 c829 c829 tr c829 c828 02 diode c829 c826 C825 diode
Text: International ^Rectifier PD-9.955B IRGTI115U06 Ultra-fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK V ce = 600V • Rugged Design •Simple gate-drive • Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"
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IRGTI115U06
25KHz
100KHz
C-829
100nH
0020b20
C-830
C828 transistors
c828
tr c828
tr c828 c829
c829
tr c829
c828 02
diode c829
c826
C825 diode
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TOCP 255 Cable
Abstract: No abstract text available
Text: Philips Components-Signetics 100141 Document No. 853-0619 ECN No. 99800 4—Bit Universal Shift Register Date of Issue June 14, 1990 Status Product Specification ECL Products FEATURES PIN DESCRIPTION •Typical propagation delay: 1.7ns •Typical supply current - lEE : 175mA
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175mA
25jiF
TOCP 255 Cable
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MARKING CODE 42t
Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures
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BFT93W
OT323
BFT93W
BFT93.
MBCB70
OT323.
MARKING CODE 42t
Transistor 0270 BF
marking 42t
269-3
fe 4276 9712
transistor BF 502
TRANSISTOR Bf 522
BFT93
FC 0137
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Untitled
Abstract: No abstract text available
Text: M O TO R O L A Order this document by MGW40N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet M G W 40N 60U Insulated G ate Bipolar TVansistor N-Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW40N60U/D
O-247
340F-03,
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