Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    QUMZ2N_NPN MODEL Search Results

    QUMZ2N_NPN MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    QUMZ2N_NPN MODEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QUMZ2N_NPN model

    Abstract: BJT BF 167
    Text: SPICE PARAMETER UMZ2N * QUMZ2N_NPN BJT model * Date: 2006/11/30 .MODEL QUMZ2N_NPN NPN + IS=70.000E-15 + BF=277.08 + VAF=114.03 + IKF=1 + ISE=70.000E-15 + NE=1.8934 + BR=11.565 + VAR=100 + IKR=.11266 + ISC=1.0228E-12 + NC=1.3260 + NK=.71869 + RE=.2 + RB=13.897


    Original     		PDF 000E-15 0228E-12 342E-12 0230E-12 92E-12 25E-9 82E-12 QUMZ2N_NPN model BJT BF 167