Untitled
Abstract: No abstract text available
Text: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Untitled
Abstract: No abstract text available
Text: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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UNC-2B 2-56
Abstract: UNC-2B 4-40 unc-2b Jackpost 32HEX 32 UNC-2B #8 -32 unc -2A
Text: MI L -D T L -8 3 5 1 3 Mic r o -D 500-063 Micro-D Jackpost Kit for Printed Circuit Boards .155 3.9 MPT 2-56 UNC-2B 2-56 UNC-2A -1 .125 (3.2) Hex .190 (4.8) .185 (4.7) .190 (4.8) Max .170 (4.3) MPT 4-40 UNC-2B 4-40 UNC-2A -2 .187 (4.7) Hex .185 (4.7) .175 (4.4)
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818-24ckpost
UNC-2B 2-56
UNC-2B 4-40
unc-2b
Jackpost
32HEX
32 UNC-2B
#8 -32 unc -2A
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Untitled
Abstract: No abstract text available
Text: J D I E L E C T R I C : 116 Series SLCs Series / Case Size L & W Cap Cap (pF) Code 116 R .015 (.381) nom. 4.7 to 18 pF Tol.: K, M 116 S .018 (.457) nom. 6.8 to 18 pF J, K, M 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43
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116RJ4R7
100TT
116RJ5R1
116RJ5R6
116RJ6R2
116RJ6R8
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Untitled
Abstract: No abstract text available
Text: BCR562 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR562 Marking XUs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR562
EHA07183
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Untitled
Abstract: No abstract text available
Text: BCR512 NPN Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07184 Type BCR512 Marking XFs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings
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BCR512
EHA07184
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N30 toroid
Abstract: siferrit t42 Toroids Epcos broadband transformers N26 core transformer B66307F0000X146 FAL0487-9 FAL0666-Y epcos t35 Ring cores N30 toroid epcos
Text: Ferrites Core E 16/8/5 B66307F Preliminary data Ungapped version 4.7 _ 0.4 _ 0.5 16 +0.7 1.87 mm-1 37.6 mm 20.1 mm2 19.4 mm2 756 mm3 g = = = = = 5.7+0.6 Σl/A le Ae Amin Ve 8.2 _ 0.3 Magnetic characteristics per set 4.7 _ 0.3 11.3+0.6 FEK0096-R Approx. weight: 3.6 g/set
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B66307F
FEK0096-R
B66307F0000X146
N30 toroid
siferrit t42
Toroids Epcos
broadband transformers
N26 core transformer
B66307F0000X146
FAL0487-9
FAL0666-Y
epcos t35 Ring cores
N30 toroid epcos
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Untitled
Abstract: No abstract text available
Text: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit
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FJN4309R
FJN3309R
FJN4309RTA
R4309
FJN4309R
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98ASA10556D
Abstract: No abstract text available
Text: PIN’S NUMBER SECTION F R E E S C A L E SEMICONDUCTOR, ALL R I G H T S RESERVED. INC. MECHANICAL OUTLINE TITLE: 32LD SOIC W/B, 0.65 PITCH 4.7 X 4.7 EXPOSED PAD, CASE—OUTLINE A-A P R IN T VERSION NOT TO SCALE DOCUMENT NO: 98ASA10556D REV: D CASE NUMBER: 1454-04
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98ASA10556D
5M-1994.
98ASA10556D
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zener diode zS
Abstract: ZS11 100 watt zener diode LT 72 ZENER
Text: ZS SERIES, 4.7 VOLTS DIODES LIMITED thru 36 VOLTS FAIRACRES ESTATE. DEDW O RTH R OAD, W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847 25 5 SEMICONDUCTOR MANUFACTURERS The Diodes Incorporated types ZS 4.7 thru ZS 36 represent a line of 1 watt, axial lead, zener diodes
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Untitled
Abstract: No abstract text available
Text: NEC » f / 7s— 9 • 2 /— h C o m l i- r z T r a n s is t o r GN1L3M M « p o u n d p n p i 'J □ tt > A V =7 M T O O / N '^ ! mm 2.1 ±0.1 1.25 ±0.1 (R i =4.7 kQ, R 2= 4.7 k£2) O— W V R. O GA1L3M t =i > 7° U / > ? i) zl&Fìì T * & t „ ( T a = 25 °C
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PWS10
CycleS50
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ni3ti
Abstract: LU024 M10258 IS333 k 6115 FK 231 SA 220 UI02 S333 T108 T460
Text: NEC m = f = r i v « r • 7— S • 5 /— h Compound Transistor x FN1L3M it H o ^ 'M M T x f f i i j t i - r t i l L T v ' i t c ¥ f i : mm 2 . 8 ± 0.2 1.5 (R i = 4.7 kQ, R2= 4.7 kQ) O — V v V R O FA1L3M t =1 > 7 °'! / > 7 ') T l Ì f f l T 'è
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PWS10
Cycles50
au99-^
ni3ti
LU024
M10258
IS333
k 6115
FK 231 SA 220
UI02
S333
T108
T460
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Untitled
Abstract: No abstract text available
Text: S' I <E > flev. DESCRIPTION APPO. * >< i z O i<=K D -4 1 *1 Q R PC 1 P a rt No. in d u ctan ce To l. uhy 1 R 5 -1 5 1 R 8 -1 0 1R 8 -1 5 4 R 7 -3 4 R 7 -5 4 R 7 -1 0 1 1.8 1.8 4.7 4.7 100-3 100-5 100 -1 0 150-20 2 2 0 -3 2 20 -5 2 2 0 -1 0 4 70 -3 4 70 -5
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GN1L3M
Abstract: No abstract text available
Text: 1 DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GN1L3M m MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • Resistors Built-in TYPE R t = 4.7 k£2 R2 = 4.7 k£2 • Complementary to GA1L3M ABSOLUTE M A X IM U M RATINGS
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-100MA
1988M
GN1L3M
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EC20QS02L
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE EC20QS02L 2.2A/ 20V FEATURES o Surface Mounting Device 2.21087 5.31.209) 1.8 .Q71) - 4.7(.185V o Low Forward Voltage Drop - _ 4.7Ç168)— 1 [ o Low Power Loss, High Efficiency 4.3tf655 . 0.2(.008) \ 1.7(.Q67) r"?| 1-W 2.7U 06)
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A/20v
EC20QS02L
T3CI55Ã
Q0G1625
-10ms
EC20QS02L
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Untitled
Abstract: No abstract text available
Text: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &
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iii25
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TT 46 N 12 LOF
Abstract: MX 0542 CL 2181 ic TT 46 N 16 LOF mmi 2740 02B2 PA33 TC-6168 6168 sc
Text: -y -57 . S/ 1^ NEC IS-ê- ^ > > 7.9 Compound Transistor iï f /v r* AA1L3M f t t t F*3JgNP N i »J□ > & m 7121*1 o y<y[ 7 x i f f i £ l*3j& L T ^ -fi : mm i-0 ( R i = 4.7 kû, R 2= 4.7 kû) o A N 1 L 3 M t 3 >-7° 'J / y 9 'J T f ê f f l ' C ë i i ~ 0
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SC-43B
TT 46 N 12 LOF
MX 0542
CL 2181 ic
TT 46 N 16 LOF
mmi 2740
02B2
PA33
TC-6168
6168 sc
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Untitled
Abstract: No abstract text available
Text: • Type T491 - Chips Solid Tantalum Capacitors MallorY Cap /xF ‘ Cap Tol Case Code - -EIA/ *r IECQ 35 WVDC @ +85°C 23 WVDC @ +125°C + + + + + 0.1 0.15 0.22 0.33 0.47 0.47 0.68 1.0 1.5 2.2 3.3 4.7 4.7 6.8 10 15 22 10% 10% 10%
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7343H
T491A104K035AS
T491A154K035AS
T491A224K035AS
T491A334K035AS
T491A474K035AS
1284/lndianapolis
46206-1284/Phone:
273-0090/Fax:
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION 4.7 0.165 ir 10.2(0.4) BD437 is silicon epitaxial-base NPN power transistor, intended for use in medium power linear and switching applications. ¡ 6.0 (0.63) TTT -1 .4(0.55) 6.6(0.26) 4.7(0.185) _r J r —I 2 .2 \ * (0,09) \ 1.4(0.055) lc.4 (0.49)MIN.
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BD437
250mA
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Untitled
Abstract: No abstract text available
Text: Tr 1 ra ns sloi : Digital Transistor Arrays Includes Resistors Dimensions (Unit: mm) DT5A143E DT5C143E Vr, (V) In (m A ) V „(V ) Id(m A) 4 7 -5 0 -1 0 0 50 20- -5 -1 0 4,7 Ri (k £ i) R? ( k ii ) 4.7 4.7 Pc (mW/unit) (Ta = 25C ) G, 50 100 50 20 - 5 10
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DT5A143E
DT5C143E
DT5A114E
DT5C114E
DTSA124E
DT5C124E
DT5A144E
DT5C144EM
DT5A143T
DT5C143T
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C1608X5ROJ475K
Abstract: tdk capacitors C1005X5R1A105K
Text: V 0 U T : 1-5V V |N = 3 .0 V to 5.5 V - • Iq u t u P to 250 V|N V oU T C|N - L 1 \xF T LM2771 G ND m- C1 + EN C 1- C apacitors: 1 |uF - T D K C 1 00 5 X 5 R 1 A 10 5K 4.7 jaF - T D K C 1 6 0 8 X 5 R 0 J47 5 K o r e qu iva le nt - CoUT " 4.7 aF I 1 1C fly\xF
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C1005X5R1A105K
C1608X5R0J475K
C1608X5ROJ475K
tdk capacitors
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transistor f630
Abstract: A-RV06 SI11E XR 2271 JTS03 sl 0565 r JT MARKING F630 h082 transistor bf 244
Text: NEC z r — S7 • S'— h C o m p o u n d T ra n sisto r FA1L3M Îâ iJ t F * 3 Îic N P N x b 0^ + ' > T ; P ^ ' > ' ; z ] > h ^ ^ X ^ ! $ « ^ - ÎÈ o / M T x f f i i Æ I mm 2.8 + 0.2 ÿ f l l L t i ^ t o 0.65- 1.5 (Ri = 4.7 k£2, R2= 4.7 kQ) o FN1L3M ¿ 3 > 7 i ) / / ^ ' J TWffl f S j t
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31NPNX
PWS10
CycleS50
transistor f630
A-RV06
SI11E
XR 2271
JTS03
sl 0565 r
JT MARKING
F630
h082
transistor bf 244
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Untitled
Abstract: No abstract text available
Text: KSR2101 FNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, >4.7, R jM T H l) • Complement to KSR 1101 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t)
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KSR2101
OT-23
TA-25T;
-100M,
-10mA
-10mA,
-100/iA
-20mA
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1003c
Abstract: KBU BRIDGE RECTIFIER
Text: F a r n e ll COMPONENTS KBU1001 KBU1007 thru S IN G L E P H A S E 10 A M P S S IL IC O N BRIDG E RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 10.0 Amperes KBU FEATURES •280 7.2 .260 (6.5) .185(4.7) (4.7) M — H .165 (4.2, I I .9 3 5 (2 3 .7 ) J 9 S (2 2 .7 )
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kbu1001
kbu1007
Ta-25Â
Ta-1003C
1003c
KBU BRIDGE RECTIFIER
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