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    RJH1CF5RDPQ-80

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating


    Original     		RJH1CF5RDPQ-80 R07DS0355EJ0100 PRSS0003ZE-A O-247) RJH1CF5RDPQ-80 PDF

    rjh1cf5

    Abstract: RJH1CF5RDPQ-80
    Text: Preliminary Datasheet RJH1CF5RDPQ-80 Silicon N Channel IGBT High Speed Power Switching R07DS0355EJ0100 Rev.1.00 May 12, 2011 Features • • • • Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating


    Original     		RJH1CF5RDPQ-80 R07DS0355EJ0100 PRSS0003ZE-A O-247) rjh1cf5 RJH1CF5RDPQ-80 PDF