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    NP16N0

    Abstract: NP16N04YUG
    Text: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)


    Original     		NP16N04YUG R07DS0362EJ0100 NP16N04YUG AEC-Q101 NP16N04YUG-E1-AY NP16N04YUG-E2-AY NP16N0 PDF

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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP16N04YUG R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)


    Original     		NP16N04YUG R07DS0362EJ0100 NP16N04YUG AEC-Q101 NP16N04YUG-E1-AY NP16N04YUG-E2-AY exter9044 PDF