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    Text: Data Sheet HAT1089C R07DS1170EJ0400 Previous: REJ03G1227-0300 Rev.4.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 79 m Ω typ (at VGS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • High density mounting


    Original     		HAT1089C R07DS1170EJ0400 REJ03G1227-0300) PWSF0006JA-A Symbo2886-9022/9044 PDF