H 7057
Abstract: "multiple aperture Window Discriminator" Op Amp Circuit Collection 1978 H7057 Vishay Ultronix Grand Junction CO Q81, 1K zero crossing detector wein bridge oscillator FET circuit collection Vishay Ultronix Grand Junction CO Q81 adjustable Q notch filter
Text: SECTION 1 BASIC CIRCUITS Inverting Amplifier Non-Inverting Amplifier VOUT e b R2 VIN R1 VOUT e RIN e R1 R1 a R2 VIN R1 TL H 7057 – 2 TL H 7057 – 1 Difference Amplifier VOUT e R3 R1 a R2 a R4 Inverting Summing Amplifier J R1 V R4 2b R2 V1 R1 VOUT e b R4
|
Original
|
PDF
|
|
DTC124E
Abstract: T110
Text: UMH5N / IMH5A Transistors General purpose dual digital transistors UMH5N / IMH5A R2 0.1Min. R1 R1 (4) (5) (3) (6) R1=R2=22kΩ (2) 2.0 1.3 0.15 R2 R2 0.65 2.1 R1 R1 R2 (3) (6) (1) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 R1=R2=22kΩ 0.9 (5)
|
Original
|
PDF
|
SC-88
DTC124E
T110
|
Marking code H1
Abstract: DTC124E T110
Text: EMH1 / UMH1N / IMH1A Transistors General purpose dual digital transistors EMH1 / UMH1N / IMH1A R2 R2 R1 (5) (3) (6) R2 2.0 0.9 0.7 ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions R1 (2) (1) IMH1A R1=R2=22KΩ (3) (4) (2) (5) R1=R2=22KΩ 0.1Min. (6)
|
Original
|
PDF
|
SC-88
DTC124E
Marking code H1
T110
|
BQ30Z554-R1
Abstract: No abstract text available
Text: bq30z554-R1 www.ti.com SLUSBD4 – OCTOBER 2013 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager Check for Samples: bq30z554-R1 FEATURES DESCRIPTION • The bq30z554-R1 device is a fully integrated Impedance Track gas gauge and analog monitoring
|
Original
|
PDF
|
bq30z554-R1
bq30z554R1
|
BQ28Z560-R1
Abstract: No abstract text available
Text: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge
|
Original
|
PDF
|
bq28z560-R1
12-pin,
|
BQ28Z560-R1
Abstract: No abstract text available
Text: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge
|
Original
|
PDF
|
bq28z560-R1
12-pin,
|
ROHM marking
Abstract: DTC124E T108
Text: UMH5N / IMH5A Transistors General purpose dual digital transistors UMH5N / IMH5A zDimensions (Unit : mm) zFeatures 1) Two DTC124E chips in a EMT or UMT or SMT package. UMH5N zCircuit schematic UMH5N (3) IMH5A (2) (1) (4) R1 (5) (6) R1 R2 R2 R2 R2 R1 (4)
|
Original
|
PDF
|
DTC124E
SC-88
ROHM marking
T108
|
BQ28Z560-R1
Abstract: No abstract text available
Text: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge
|
Original
|
PDF
|
bq28z560-R1
12-pin,
|
BQ28Z560-R1
Abstract: No abstract text available
Text: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge
|
Original
|
PDF
|
bq28z560-R1
12-pin,
|
re7ml11bu
Abstract: RE7-RM11BU RE7MY13BU RE7-RB13MW RE7-MY13MW RE7TL11BU re7my13mw RE7RM11BU RE7PE11BU RE7CV11BU
Text: ZELIO - time RE7-iiiiii 1 1 1 ta 4 2 U/T R1 30 2 U/T R1 R2 5 2 U/T R1 30 30 R2 10s X.% DELAY 3 INST R2 10s X.% 1 10s X.% 2 30 10s X.% tr FUNCTION 1 2 3 4 5 Reglage fin de la temporisation Plage de temporisation Sélection des fonctions Visualisation par DEL
|
Original
|
PDF
|
RE7-MY13MW
RA11BU
re7ml11bu
RE7-RM11BU
RE7MY13BU
RE7-RB13MW
RE7-MY13MW
RE7TL11BU
re7my13mw
RE7RM11BU
RE7PE11BU
RE7CV11BU
|
DTA143X
Abstract: T148 MARKING CODE 21
Text: EMA7 / UMA7N / FMA7A Transistors Emitter common dual digital transistors EMA7 / UMA7N / FMA7A zExternal dimensions (Units : mm) zFeatures 1) Two DTA143X chips in a EMT or UMT or SMT package. (2) (5) R1 R1 (5) (2) (4) (5) R2 R2 ROHM : EMT5 R1 Each lead has same dimensions
|
Original
|
PDF
|
DTA143X
-20mA
-10mA/-0
-10mA
100MHz
T148
MARKING CODE 21
|
Untitled
Abstract: No abstract text available
Text: EMA7 / UMA7N / FMA7A Transistors Emitter common dual digital transistors EMA7 / UMA7N / FMA7A !External dimensions (Units : mm) !Features 1) Two DTA143X chips in a EMT or UMT or SMT package. (2) (5) R1 R1 (5)/(6) (2) (4) (5) R2 R2 ROHM : EMT5 R1 Each lead has same dimensions
|
Original
|
PDF
|
DTA143X
|
DTC123
Abstract: DTC123J a7050
Text: UNISONIC TECHNOLOGIES CO., LTD UH10K NPN SILICON TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS FEATURES * Two UTC DTC123J chips in a SOT-363 package. * Halogen Free EQUIVALENT CIRCUIT (R1=2KΩ, R2=47KΩ) 6 5 4 TR1 R1 R2 R2 R1 TR2 2 1 3 ORDERING INFORMATION
|
Original
|
PDF
|
UH10K
DTC123J
OT-363
UH10KG-AL6-R
OT-363
QW-R218-010
DTC123
a7050
|
transistors A7
Abstract: EMA7 equivalent DTA143X T148
Text: EMA7 / UMA7N / FMA7A Transistors Emitter common dual digital transistors EMA7 / UMA7N / FMA7A !External dimensions (Units : mm) !Features 1) Two DTA143X chips in a EMT or UMT or SMT package. (2) (5) R1 R1 (5)/(6) (2) (4) (5) R2 R2 ROHM : EMT5 R1 Each lead has same dimensions
|
Original
|
PDF
|
DTA143X
-20mA
-10mA/-0
-10mA
100MHz
transistors A7
EMA7 equivalent
T148
|
|
|
Untitled
Abstract: No abstract text available
Text: IC Transistors SMD Type Product specification FMG9A Unit: mm • Features ● Input voltage:Vin=40V ● Output current: IO=50mA 4 5 1 3 (2) 2 3 (1) R1=10kΩ R1 DTr2 R2 R2 (4) R1 R2=10kΩ DTr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Parameter Supply voltage
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification IMH2A • Features Unit: mm 5 4 0.3min ● Dual NPN digital transistor 6 0to0.1 4 (5) (6) R1 R2 DTr1 2 3 1 DTr2 R2 R1 (3) (2) 1 pin mark (1) R1=47kΩ R2=47kΩ ■ Absolute Maximum Ratings Ta = 25℃ Parameter
|
Original
|
PDF
|
50m100m
|
Untitled
Abstract: No abstract text available
Text: TAIWAN LITON ELECTRONIC L IT E M ^ I T-13/4 5mm RESISTOR LAMPS 4TE » • LTL-4203-R1/R2 LTL-4213-R1/R2 LTL-4223-R1/R2 LTL-4233-R1/R2 0035^5 GGG3375 4T7 ■ T L I T ‘ i RED BRIGHT RED Ht.EFF.RED GREEN LTL-4238-R1/R2 GREEtò LTL-4253-R1/R2 YELLOW LTL-4293-RVR2 ORANGÉ
|
OCR Scan
|
PDF
|
T-13/4
LTL-4203-R1/R2
LTL-4213-R1/R2
LTL-4223-R1/R2
LTL-4233-R1/R2
GGG3375
LTL-4238-R1/R2
LTL-4253-R1/R2
LTL-4293-RVR2
|
Untitled
Abstract: No abstract text available
Text: TAIWAN LITON ELECTRONIC flflBSb'ii DD033L7 32G • TLIT T -l 3mm RESISTOR LAMPS LTL-4201-R1/R2 RED LTL-4211-R1/R2 BRIGHT RED LTL-4231-R1/R2 GREEN LTL-4251-R1/R2 YELLOW LTL*4291-R1/R2 ORANGE FEATURES • IN T E G R A L C U R R E N T L IM IT IN G R E S IS T O R .
|
OCR Scan
|
PDF
|
DD033L7
LTL-4201-R1/R2
LTL-4211-R1/R2
LTL-4231-R1/R2
LTL-4251-R1/R2
4291-R1/R2
ODQ332M
|
SOT135
Abstract: No abstract text available
Text: HEF4754V LSI J 18-ELEMENT BAR GRAPH LCD DRIVER The HEF4754V drives an 18-element bar graph LCD in linear relation to the control voltage V c in a pointer or therm om eter mode. 27 v ref max R1 R1 II I I I 10 11 12 R1 26 Vref n' n 25 LATCH 13 AND D IVID ER
|
OCR Scan
|
PDF
|
HEF4754V
18-ELEMENT
HEF4754V
SOT135
|
TELIC
Abstract: hm 65728b
Text: HM 65768B BURN-IN SCHEMATICS F4W VW — | 1 F 5 - y \W — 2 20 - VCC F6—v \W — 3 18 —A W — R1- 19 - A W — R1- F 7 -M W — 4 17 —A W — R1- F 8 -A W — 5 16 - A W — R1- F9- t A W - i 6 15 - A W — RHR2-
|
OCR Scan
|
PDF
|
F10-AWâ
F11-AWâ
R2-F12
R2-F13
R2-F15
300Qperrow
25KHzÂ
65768B
option50
65787/RSV
TELIC
hm 65728b
|
Untitled
Abstract: No abstract text available
Text: T C X O /V C X O ITCXO-R2 ITCXO-RO6 ITCXO-R1 ,VCXO-R1 ITCXO-R03 7.0 + 0.3 1 - VC or NC VC or NC <X> c I in? ii— _ 7.62 ± 0.3 _ U LU Llj f i JJ]_ 1= T C X O -RLR2 VCXO-R1 TCXO-R06.R03 Unit 12.8,13.0,19.2,19.68 13.0, 27.0 13.0, 19.20, 19.68, 19.8 M Hz
|
OCR Scan
|
PDF
|
ITCXO-R03
10kQ//10pF
TCXO-R06
10kn//10pF
TCTXO-R06)
TCXO-R03)
10kn//10pF
2000MHz
2500MHz
2000MHz
|
marking code fy* transistor
Abstract: transistor M 839 PDTC114EE
Text: Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES • Built-in bias resistors R1 and R2 typ. 10 k ii each • Simplification of circuit design -3 It • Reduces number of components and board space. R1 ./
|
OCR Scan
|
PDF
|
SC-75
PDTC114EE.
PDTA114EE
150cC
marking code fy* transistor
transistor M 839
PDTC114EE
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors NPN resistor-equipped transistor PDTC114TS FEATURES • Built-in bias resistor R1 typ. 10 k ii • Simplification of circuit design • Reduces number of components and board space. ^ n \ S2 R1 ) 1- V 03/ APPLICATIONS
|
OCR Scan
|
PDF
|
PDTC114TS
MAM361
PDTA114TS.
Jul03
|
PMA-545
Abstract: PCB 545 TB-501 RF CIRCUIT DIAGRAM TCCH-80
Text: Evaluation Board C3— \ and Circuit /— R1 / — L1 RF OUT RF IN TB— 5 0 1 + +Vd O C3 r R1 L1 SMA 50 Ohm RF IN > Ô L2 8 C1 7 C2 < 2 IIDUT PADDLE _ _ GROUND — COMPONENT DUT C1, C2, C3 L1 L2 R1 SMA (50 Ohm) RF OUT -T± VALUE/PART NUMBER M in i-C ircu its P M A -545+
|
OCR Scan
|
PDF
|
PMA-545+
TCCH-80+
R04350
TB-501-20+
PMA-545
PCB 545
TB-501
RF CIRCUIT DIAGRAM
TCCH-80
|
