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Rochester Electronics LLC R1LV0416CSB-7LI-D0 STANDARD SRAM, 256KX16, 70NS
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DigiKey	R1LV0416CSB-7LI-D0	Bulk			13	1 - 10 - 100 $23.09 1000 $23.09 10000 $23.09	Buy Now
Rochester Electronics LLC R1LV0416CSB-7LI-S0 IC SRAM 4MBIT PARALLEL 44TSOP II
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DigiKey	R1LV0416CSB-7LI-S0	Bulk			13	1 - 10 - 100 $23.09 1000 $23.09 10000 $23.09	Buy Now
Renesas Electronics Corporation R1LV0416CSB-7LI#S0 SRAM Chip Async Single 2.5V/3V 4M-bit 256K x 16 70ns 44-Pin TSOP-II
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Verical	R1LV0416CSB-7LI#S0		41,975		14	1 - 10 - 100 $26.0875 1000 $23.5875 10000 $23.5875	Buy Now
	R1LV0416CSB-7LI#S0		27,835		14	1 - 10 - 100 $26.0875 1000 $23.5875 10000 $23.5875	Buy Now
	R1LV0416CSB-7LI#S0		22		14	1 - 10 - 100 $26.0875 1000 $23.5875 10000 $23.5875	Buy Now
Rochester Electronics	R1LV0416CSB-7LI#S0		69,832		1	1 $22.2 10 $22.2 100 $20.87 1000 $18.87 10000 $18.87	Buy Now
Renesas Electronics Corporation R1LV0416CSB-7LI#D0 WIDE TEMPERATURE RANGE VERSION 4M SRAM (256-KWORD 16-BIT)
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Verical	R1LV0416CSB-7LI#D0		667		14	1 - 10 - 100 $26.0875 1000 $23.5875 10000 $23.5875	Buy Now
Rochester Electronics	R1LV0416CSB-7LI#D0		667		1	1 $22.2 10 $22.2 100 $20.87 1000 $18.87 10000 $18.87	Buy Now
Renesas Electronics Corporation R1LV0416CBG-5SI#BQ
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Bristol Electronics	R1LV0416CBG-5SI#BQ		524			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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R1LV0416C Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
R1LV0416CBG-5SI		Renesas Technology	Memory> Low Power SRAM		Original	PDF
R1LV0416CBG-7LI		Renesas Technology	Memory> Low Power SRAM		Original	PDF
R1LV0416CBG-I		Renesas Technology	Wide Temperature Range Version 4M SRAM (256-kword x 16-bit)		Original	PDF
R1LV0416CBG-I Series		Renesas Technology	Wide Temperature Range Version 4M SRAM (256-kword x 16-bit)		Original	PDF
R1LV0416C-I		Renesas Technology	Wide Temperature Range Version 4M SRAM (256-kword x 16-bit)		Original	PDF
R1LV0416C-I Series		Renesas Technology	Wide Temperature Range Version 4M SRAM (256-kword x 16-bit)		Original	PDF
R1LV0416CSB-5SI		Renesas Technology	4M SRAM (256-kword x 16-bit)		Original	PDF
R1LV0416CSB-7LI		Renesas Technology	4M SRAM (256-kword x 16-bit)		Original	PDF

R1LV0416C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
R1LV0416csb-7 Abstract: No abstract text available Text: R1LV0416C-I Series Wide Temperature Range Version 4 M SRAM 256-kword x 16-bit REJ03C0105-0100Z Rev. 1.00 Aug.05.2003 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process	Original	R1LV0416C-I 256-kword 16-bit) REJ03C0105-0100Z 16-bit. 44-pin R1LV0416csb-7	PDF
Untitled Abstract: No abstract text available Text: R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0259-0100 Rev.1.00 Jun.17.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor	Original	R1LV0416CBG-I 256-kword 16-bit) REJ03C0259-0100 16-bit. R1LV0416C-I 48-pin	PDF
R1LV0416CBG-5SI Abstract: R1LV0416CBG-7LI R1LV0416CBG-I R1LV0416C-I Text: R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0259-0100 Rev.1.00 Jun.17.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor	Original	R1LV0416CBG-I 256-kword 16-bit) REJ03C0259-0100 16-bit. R1LV0416C-I 48-pin R1LV0416CBG-5SI R1LV0416CBG-7LI	PDF
r1lv0416c Abstract: R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I R1LV0416C-I Text: R1LV0416CBG-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0259-0001 Preliminary Rev.0.01 Jan.11.2005 Description The R1LV0416CBG-I is a 4-Mbit static RAM organized 256-kword × 16-bit. The R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor	Original	R1LV0416CBG-I 256-kword 16-bit) REJ03C0259-0001 16-bit. R1LV0416C-I 48-pin r1lv0416c R1LV0416CBG-5SI R1LV0416CBG-7LI	PDF
R1LV0416CSB-5SI Abstract: R1LV0416CSB- R1LV0416C-I R1LV0416CSB-7LI Text: R1LV0416C-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0105-0200Z Rev. 2.00 May.26.2004 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process	Original	R1LV0416C-I 256-kword 16-bit) REJ03C0105-0200Z 16-bit. 44-pin R1LV0416CSB-5SI R1LV0416CSB- R1LV0416CSB-7LI	PDF
Untitled Abstract: No abstract text available Text: R1LV0416C-I Series Wide Temperature Range Version 4M SRAM 256-kword x 16-bit REJ03C0105-0200Z Rev. 2.00 May.26.2004 Description The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process	Original	R1LV0416C-I 256-kword 16-bit) REJ03C0105-0200Z 16-bit. 44-pin	PDF
SOP 8 200MIL Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with	Original	D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash	PDF
HM2V8100TTI5SE Abstract: HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI Text: LPSRAM Part Number Guide Density Configuration 256K 32k x8 Voltage 3.0-3.6 & 4.5-5.5V Package SOP28 TSOP28 4.5-5.5V SOP28 Speed 70ns 70ns 55ns 70ns TSOP28 55ns 70ns 1M 128k x8 2.7-3.6V SOP32 TSOP32 sTSOP32 4.5-5.5V SOP32 70ns 70ns 70ns 55ns 70ns TSOP32 55ns	Original	TSOP32 sTSOP32 M5M5256DVP-55LL M5M5256DVP-55XL M5M5256DVP-70LL M5M5256DVP-70XL M5M5256DVP-70LLI M5M5V108DFP-70H HM2V8100TTI5SE HM216514TTI5SE M5M51008DFP-70HIST HM216514 M5M51008DFP-55HIBT hm28100tti5se R1LV1616HSA-4SI M5M51008DFP-70HI M5M5V108DVP-70HIST R1LV0408DSP-5SI	PDF
R1LV0416CSB-5SI Abstract: r1lv0416c R1LV0416C-I R1LV0416CSB-7LI Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
TC554161A Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000 Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000	PDF
HM628100 Abstract: HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006 Text: BSI Low Power SRAM Cross Reference Table Nov-30-2008 Density Configuration Part No. Speed ns Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax Voltage (V) Samsung Cypress 2.4~5.5 x8 BS62LV256 70 0.05uA 0.1uA 0.4uA 1mA 20mA 35mA BS62LV1027 55/70 0.1uA	Original	Nov-30-2008 BS62LV256 M5M5256D-G K6X0808T1D CY62256V IS62LV256AL BS62LV1027 BS616LV1010 CY62256 M5M5256D-L HM628100 HM6216514 M5M5256D-L K6X0808C1D BS616LV1010 BS616LV2016 BS616LV2019 BS616UV2019 K6X8008C2B BS62LV2006	PDF
K6X8016T3B-UF55 Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70 Text: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm	Original	AUS-2154 D-65510 K6X8016T3B-UF55 K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70	PDF
TC55VEM416AXBN Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA	Original	BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN	PDF
RILP0108ESP-xSR Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D Text: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.	Original	R1WV6416R RILP0108ESP-xSR RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D	PDF

MBI5024 Abstract: dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963 Text: LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro 16 Bit CS8816 / CS8826 MBI5024 / MBI5026 DM134 / DM135 / DM13C TB62706 / TB62726 MAX6969 / MAX6971 STP16C596 / STP16CP05 A6276 8 Bit CS8808/CS8818 MBI5167 / MBI5168	Original	CS8816 CS8826 MBI5024 MBI5026 DM134 DM135 DM13C TB62706 TB62726 MAX6969 dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963	PDF
M5M5256DFP-70LL*bm Abstract: HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI Text: LPSRAM Part Number Guide Density 256K Configuration 32k x8 Voltage Package 3.0-3.6 & 4.5-5.5V SOP28 Speed 70ns Temp Range Catalog / Data Sheet Part Number 0 ~ 70'C. M5M5256DFP-70G 0 ~ 70'C. M5M5256DFP-70XG -40 ~ 85'C M5M5256DFP-70GI TSOP28 4.5-5.5V SOP28 70ns	Original	M5M5256DFP-70G M5M5256DVP-70G M5M5256DVP-70XG M5M5256DVP-70GI M5M5256DFP-55LL M5M5256DFP-55XL M5M5256DFP-70LL M5M5256DFP-70XL M5M5256DFP-70LLI M5M5256DVP-55LL M5M5256DFP-70LL*bm HM2V8100TTI5SE R1LV1616HSA-4SI HM216514TTI5SE M5M5V108DVP-70HIBT M5M5V108DVP M5M5256DFP-70LLISM M5M5W816TP-55HI R1LP0408CSP-7LC M5M51008DFP-70HI	PDF
R1LV1616 Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.	Original	R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817	PDF
ECU car Abstract: 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI Text: [Preliminary] This product is under development and its specification might be changed without any notice. R1LV0816ASD -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit / 1M word x 8bit REJ03C0397-0001 Preliminary Rev.0.01 2009.12.08 Description The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,	Original	R1LV0816ASD 16bit REJ03C0397-0001 288-words 16-bit, 52pin R1WV6416R ECU car 52-pin TSOP M5M5V108DVP-70HI r1lv0808 m5m5v108dkv M5M5V216ATP-70HI	PDF