R3305 TRANSISTOR Search Results

R3305 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

R3305 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
R3305 transistor Abstract: R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR FJN3303 Text: FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted	Original	FJN3303 FJN3303 FJN3303BU FJN3303TA R3305 transistor R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR	PDF
R3305 transistor Abstract: No abstract text available Text: FJN3305R NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJN4305R Application • Switching Application (Bias Resistor Built in)	Original	FJN3305R FJN4305R FJN3305RTA R3305 FJN3305R R3305 transistor	PDF
Untitled Abstract: No abstract text available Text: FJN3305R NPN Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built in bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ • Complement to FJN4305R Application • Switching Application (Bias Resistor Built in)	Original	FJN3305R FJN4305R FJN3305RTA R3305	PDF
r3305 Abstract: R3305 transistor Text: FJN3305R NPN Epitaxial Silicon Transistor with Bias Resistor Features Description • 100 mA Output Current Capability • Built-in Bias Resistor R1 = 4.7 kΩ, R2 = 10 kΩ Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.	Original	FJN3305R FJN3305RTA R3305 r3305 R3305 transistor	PDF
schematic diagram tv sony 21 trinitron Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV	Original	KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112	PDF
ISL6259 Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01	Original		PDF
R3305 transistor Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE DbE D bb53T31 0014^43 3~" • A MAINTENANCE TYPE for new design use LTE21015R LKE21015T T - 3 3 -OS’ MICROW AVE LINEAR POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.	OCR Scan	bb53T31 LTE21015R) LKE21015T FO-53. R3305 transistor	PDF
LKE21015T Abstract: LTE21015R Text: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 0014^43 3 ■ II ' MAINTENANCE TYPE for newdesignuse LTE21015R J LKE21015T 3 3 ~ ¿7S ' I MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.	OCR Scan	bb53T31 LKE21015T LTE21015R) LKE21015T LTE21015R	PDF
Untitled Abstract: No abstract text available Text: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe	OCR Scan	BLX92A QQ14D5	PDF
OC1016 Abstract: SFE 1730 LTE21025R LTE21050R Text: AMER P H I L I P S / D I S C R E T E Lb53T31 D D m ib3 T □ LE D D EV EL O P M EN T DATA LTE21025R T his data sheet contains advance information and r-3l-OiT specifications are subject to change w ithout notice. M IC R O W A V E LINEAR PO W ER T R A N SIST O R	OCR Scan	Lb53T31 LTE21025R FO-41B) OC1016 SFE 1730 LTE21025R LTE21050R	PDF
bel 187 transistor Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn Text: A 1I N AMER O bE P H ILIP S/D ISC R ETE D bbSBTBl O G lM ^ n b LB E /LC E 2 0 0 3S LB E /LC E2 0 0 9S T - 3 3 - Ö S - M IC R O W A V E LINEAR PO W ER T R A N SIST O R S N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.	OCR Scan	LBE/LCE2003S LBE/LCE2009S LBE2Q03S LBE2009S LCE2003S LCE2009S LBE/LCE200Striplines bel 187 transistor RTC406 LBE2003S BEL 187 npn	PDF