C1000B
Abstract: 3020C
Text: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM416C1000BT
16Bit
1Mx16
7Tb4142
DD3D23b
C1000B
3020C
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Untitled
Abstract: No abstract text available
Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating
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HY5116400A
HY5116400A
1AD23-10-MAY95
HY5116400AJ
HY5116400ASLJ
HY511
400AT
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DG34B
Abstract: No abstract text available
Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BS
D034b64
DG34B
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KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
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marking WMM
Abstract: RA52 1cas5 22r29
Text: 1 MEG x 4 DRAM DRAM QUAD CAS PARITY, FAST PAGE MODE FEATURES • Four independent CAS controls, allowing individual m anipulation to each of the four data In p u t/O u tp u t ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit w ords w hen using 1 Meg x 4 DRAMs for mem ory
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225mW
1024-cycle
D01-4
T-46-23-17
MT4C4256DJ
MT4C4259EJ
marking WMM
RA52
1cas5
22r29
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON 4 MEG TECHNOLOGY. INC U SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH 72-Pin Small-Outline DIMM DE-5 SOJ version (DE-3) TSOP version -6 -7 D DT Packages 7 2 -pin Small-Outline DIMM (gold) Refresh Standard/32m s
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72-Pin
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Untitled
Abstract: No abstract text available
Text: blllSM'ì 0004371 2E2 B U R N SSE D MICRON TECHNOLOGY INC ADVANCE ic n o N MT4C8512/3 5 1 2 K x 8 DRAM DRAM 512K x 8 DRAM FAST PAGE M O D E • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column addresses
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MT4C8512/3
350mW
024-cycle
MT4C8513
28-Pin
blllS41
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KM44C1003c
Abstract: No abstract text available
Text: KM44C1003C CMOS DRAM 1 Mx 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power
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KM44C1003C
KM44C1003c
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rbbb
Abstract: No abstract text available
Text: KM416V254DJ ELECTRONICS CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,
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KM416V254DJ
256Kx16
DQ0-DQ15
rbbb
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 5 B K CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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KM44C4105BK
003470b
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KM416C64
Abstract: No abstract text available
Text: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption
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KM416C64
64Kx16
KM416C64/L
KM416C64
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s KMM5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung
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KMM5362000A1/A1G
KMM5362000A1
bitsX36
20-pin
72-pin
130ns
150ns
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Untitled
Abstract: No abstract text available
Text: MT4C1024 L 1 MEG X 1 DRAM (M IC R O N DRAM 1 MEG x 1 DRAM FEATURES PIN ASSIGNMENT (Top View) • 512-cy cle re fre sh in 8m s (M T 4C 1024) o r 6 4 m s (M T 4C 1024 L) • In d u stry -stan d a rd x l p in o u t, tim in g , fu n ctio n s and p ack ag e s
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MT4C1024
512-cy
T4C1024
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51C256L
Abstract: 51C256L-12 51C256L-15 51C256L-20 28003* intel
Text: [P iF S iiU B lO tM Ä ß W in te T 51C256L LOW POWER 256K x 1 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Current (mA) • Low Power Data Retention - Standby current, CHMOS — 1 0 0 /¿A (max.) - Refresh period, RAS-Only — 32ms (max.)
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51C256L
51C256L-12
51C256L-15
51C256L-20
51C256L-20
28003* intel
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC MICROSYSTEMS 640 Megabit CMOS DRAM DPD16MX40PKW5 PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPD16MX40PKW5 is the 16 Meg x 40 ECC Dynamic RAM module in the family of SuperSIMM modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of 4 stacks consisting of four 16 Meg x
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DPD16MX40PKW5
DPD16MX40PKW5
72-pin
3QA153-10
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20100c
Abstract: 13409C
Text: CELESTICA 8M x 36 PARITY FPM SIMM FEATURES • • 72-pin industry standard 4-byte single-in-line memory module Compliant with JEDEC standards 21 -C and MO-116 Supports 90°, 40° and 22.5° connectors High performance, CMOS Single 5V ± 10% power supply
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72-pin
MO-116
20432C)
14424C
20100c
13409C
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20264C
Abstract: No abstract text available
Text: CELESTICA„ 8M x 72 EDO ECC UNBUFFERED DIMM FEATURES 168-pin industry standard eight-byte dual-in-line memory module JEDEC compliant: 21-C, Figure 4.5.3-A, B, F, D, N Release 7 No. 95 MO-161 High performance, CMOS Single 3.3V ± 0.3 power supply LVTTL-compatible inputs and outputs
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168-pin
MO-161
20431C)
20335C
20264C
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200jjs
Abstract: No abstract text available
Text: CELESTICA 2M x 64 FPM BUFFERED DIMM FEATURES • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21 C, Fig. 4-13A, B, C, D, F Release 4 : No. 95 MO-161 CAS, WE, OE and Address lines are buffered High performance, CMOS Single 3.3 ± 0.3V power supply
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168-pin
MO-161
20432C)
16160C
200jjs
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Untitled
Abstract: No abstract text available
Text: CELESTICA 1M x 64 FPM UNBUFFERED DIMM FEATURES • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 3.3 ± 0.3V power supply LVTTL-compatible inputs and outputs
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168-pin
MO-161
20432C)
16143C
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Untitled
Abstract: No abstract text available
Text: CELESTICA 2M x 64 FPM UNBUFFERED DIMM FEATURES • • • • • • • • 168-pin industry standard 8-byte dual-in-line memory module JEDEC compliant: 21-C, Fig. 4-13A, B, C, D, I No. 95 MO-161 High performance, CMOS Single 3.3 ± 0.3V power supply LVTTL-compatible inputs and outputs
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168-pin
MO-161
20432C)
16142C
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16100A
HY51V16100A
V16100Ato
1AD21-0O-MAY94
HY51V16100AJ
HY51V16100ASU
HY51V16100AT
HY51V161OOASLT
HY51V16100AR
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Untitled
Abstract: No abstract text available
Text: ♦HYUNDAI H Y 5 1 4 1 0 0 S e rie s 4M X 1-bit CMOS DRAM SEMICONDUCTOR DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514100
DDD14Ã
3380i8
1AC01-20-APR93
4L750flfl
HY514100J
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Untitled
Abstract: No abstract text available
Text: HY51V17405B Series •HYUNDAI 4M x 4-bit CMOS DRAM with Burst EDO DESCRIPTION The HY51V17405B is the new generation and fast dynamic RAM organized 4,194,304x4-bit. The HY51V17405B utilized Hyundai's CMOS silicon gate process technology as well as advenced circuit techniques to prove wide
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HY51V17405B
304x4-bit.
HY51V17405B
1AD61-00-MAY95
HY51V17405BJC
HY51V17405BSLJC
HY51V17405BTC
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030b4T
Abstract: C1204B
Text: KM416V1004BJ ELECTRONICS CMOS D R A M 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM416V1004BJ
16Bit
1Mx16
7Rb4142
03Qb5
030b4T
C1204B
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