Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RAA MARKING CODE Search Results

    RAA MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    RAA MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELPIDA 512MB NOR FLASH

    Abstract: nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100
    Text: DiskOnChip-Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, August 2004 • Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original
    PDF 97-DT-0304-00 ELPIDA 512MB NOR FLASH nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100

    512k x 8 chip block diagram

    Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
    Text: White Electronic Designs WED9LAPC3C16V8BC 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous


    Original
    PDF WED9LAPC3C16V8BC LUCTAPC640 WED9LAPC3C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC3C16V8BI 512k x 8 chip block diagram WED9LAPC2B16P8BC

    WED9LAPC2B16P8BC

    Abstract: WED9LAPC2C16V8BC
    Text: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous


    Original
    PDF WED9LAPC2C16V8BC LUCTAPC640 WED9LAPC2C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC2C16V8BI WED9LAPC2B16P8BC

    dba1

    Abstract: diode MARKING CODE A9 UPD481 diode MARKING A9
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.


    Original
    PDF PD4811650 256K-WORD 32-BIT PD4811650 100-pin dba1 diode MARKING CODE A9 UPD481 diode MARKING A9

    Untitled

    Abstract: No abstract text available
    Text: WED48S8030E 2M x 8 Bits x 4 BANKS SYNCHRONOUS DRAM FEATURES DESCRIPTION „„ Single 3.3V power supply The WED48S8030E is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits. Synchronous design allows precise cycle control with the use of system clock, I/O


    Original
    PDF WED48S8030E WED48S8030E 100MHz

    Untitled

    Abstract: No abstract text available
    Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of


    Original
    PDF EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz)

    WED48S8030E

    Abstract: WED48S8030E10SI WED48S8030E8SI
    Text: WED48S8030E White Electronic Designs 2M x 8 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 125, 100MHz  SDRAM CAS# Latency = 2  Burst Operation The WED48S8030E is 67,108,864 bits of synchronous high


    Original
    PDF WED48S8030E 100MHz WED48S8030E WED48S8030E8SI WED48S8030E10SI 125MHz WED48S8030E10SI WED48S8030E8SI

    EDI416S4030A

    Abstract: 1Mx16bits
    Text: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 100, 83MHz  SDRAM CAS Latentency = 3 100MHz , 2 (83MHz)


    Original
    PDF EDI416S4030A 1Mx16 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 1Mx16bits

    SRA2210SF

    Abstract: KSR-2014-000
    Text: SRA2210SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF SRA2210SF OT-23F KSR-2014-000 -10mA, SRA2210SF KSR-2014-000

    13001 TRANSISTOR equivalent

    Abstract: 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000
    Text: SRA2210S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    PDF SRA2210S OT-23 KSR-2030-000 -10mA, 13001 TRANSISTOR equivalent 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000

    WED416S8030A

    Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI
    Text: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation


    Original
    PDF WED416S8030A 2Mx16x WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI WED416S8030A12SI 2Mx16bitsx4banks WED416S4030A 2MX16x4 WED416S8030A10SI

    Untitled

    Abstract: No abstract text available
    Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of


    Original
    PDF EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz)

    Untitled

    Abstract: No abstract text available
    Text: K4S64323LF-S D N/U/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.3 June 2002 Rev. 1.3 June 2002 K4S64323LF-S(D)N/U/P CMOS SDRAM Revision History Revision 0.0 (Feb. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die datasheet. (VDD 2.5V, VDDQ 1.8V & 2.5V).


    Original
    PDF K4S64323LF-S 2Mx32 90FBGA 100MHz, 32Bit

    Untitled

    Abstract: No abstract text available
    Text: K4S643233F-S D E/N/I/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 July 2002 Rev. 1.3 July. 2002 K4S643233F-S(D)E/N/I/P CMOS SDRAM Revision History Revision 0.0 (Jan. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die 90FBGA datasheet (V DD/VDDQ 3.0V/3.0V, 3.3V/3.3V).


    Original
    PDF K4S643233F-S 2Mx32 90FBGA 90FBGA -75/1H/-1L.

    DT1122G

    Abstract: dt1122 TCDT1120 DT1122G1
    Text: TCDT1120 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransis­ tor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


    OCR Scan
    PDF TCDT1120 11-Ja TCDT112 TCDT112. DT1122G dt1122 DT1122G1

    et1600

    Abstract: No abstract text available
    Text: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse­ nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.


    OCR Scan
    PDF TCET1600 TCET4600 TCET1600/ TCET2600/ TCET4600 16-lead 11-Ja TCET2600 et1600

    c81-004

    Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
    Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class


    OCR Scan
    PDF ERC81-004 e18-ts 95t/R89 Shl50 c81-004 c81 004 Diode C81 004 C81004 ERC81 T151 T460 T810 T930

    TCET110G

    Abstract: No abstract text available
    Text: TCET110. G up to TCET4100 Vishay Telefunken Optocoupler with Phototransistor Output Description TheTCETHO./ TCET2100/TCET4100 consists of a phototransistor optically coupled to a gallium arse­ nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.


    OCR Scan
    PDF TCET110. TCET4100 TCET2100/TCET4100 16-lead 11-Ja TCET2100 TCET4100 TCET110G

    Surface Mount Device A006

    Abstract: S281A HSMS-280A
    Text: WhoI HEWLETT 1"KM PACKARD Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • S u rfa ce M ou n t SO T-323 P ack age Package Lead Code Identification (Top View) • Low Turn-O n V oltage


    OCR Scan
    PDF OT-323 SC-70) HSMS-280A HSMS-281A HSMS-282A T-323 OT-323 5965-4705E Surface Mount Device A006 S281A

    smd marking code fj

    Abstract: smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP
    Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10P3 U nit: mm r Weight 0.326g Typ 30 V 10 A i 2 4 Feature 6.6 • SMD • SMD • Î S ® V f=0.4V • Ultra-Low V f=0.4V • Reverse connect protection for DC power source • DC O R-output


    OCR Scan
    PDF DE10P3 32fig 50HzX' smd marking code fj smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP

    Untitled

    Abstract: No abstract text available
    Text: fS h l IVI V IA iv « * * * * « :« ' " : Serie» Absolute Maximum R atings mI t e » s se# * Symbol S to ra g e T em p eratu re a-è-aeaj* O perating Ju n c tio n T em peratur* * yM J± Maximum O f f- s ta te Voltage - * r - y * > n ì& S u rg e O n -sta te C u rren t


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: A b s o lu te M axim um R a tin g s ^ ,. : - b m a n Item S to ra g e T em peratur» S '& g ß i ä * O perating Ju n c tio n T em p erature * y & l± Maximum O f f - s ta te V oltage -t > / •? X+ > * Critical Rate of Rise of O n-state Current « T stg -4 0 -1 2 5


    OCR Scan
    PDF

    optocoupler 207

    Abstract: No abstract text available
    Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo­ transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package.


    OCR Scan
    PDF MCT62H MCT62H 11-Ja optocoupler 207

    c3 MARKING CODE

    Abstract: c3 marking
    Text: T e m ic J/SST lll Series Siliconix N-Channel JFETs J ill J112 J113 SST111 SST112 SST113 Product Summary P a r t N u m b er V g S o£F (V) r DS(on) M ax (Q ) ii)(ofr> i y p (pA) toN Typ (n s) J/S S T lll - 3 to - 1 0 30 5 4 J/SST112 - 1 to - 5 50 5 4 J/SST113


    OCR Scan
    PDF SST111 SST112 SST113 J/SST112 J/SST113 seeAN105, P-37653--Rev. J/SST111 J/SST111 J/SST112 c3 MARKING CODE c3 marking