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    RAA MARKING CODE Search Results

    RAA MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    RAA MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ELPIDA 512MB NOR FLASH

    Abstract: nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100
    Text: DiskOnChip-Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, August 2004 • Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		PDF 97-DT-0304-00 ELPIDA 512MB NOR FLASH nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100

    MCP 256M nand toshiba

    Abstract: Diskonchip QUALCOMM Reference manual TRUEFFS TSOP 48 thermal resistance type1 MARKING G3 MCP 256M nand micron MICRON mcp transistor marking A9M MS06-D9SD8-B3
    Text: DiskOnChip -Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, September 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		PDF 91-DT-0504-00 MCP 256M nand toshiba Diskonchip QUALCOMM Reference manual TRUEFFS TSOP 48 thermal resistance type1 MARKING G3 MCP 256M nand micron MICRON mcp transistor marking A9M MS06-D9SD8-B3

    PD48

    Abstract: uPD481850GF-A12-JBT
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 128 K words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write


    Original     		PDF PD481850 PD481850 100-pin PD48 uPD481850GF-A12-JBT

    MD4832-D512-V3Q18-X-P

    Abstract: MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual
    Text: DiskOnChip -Based MCP Including Mobile DiskOnChip G3 and Mobile RAM Data Sheet, February 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


    Original     		PDF 97-DT-0803-00 MD4832-D512-V3Q18-X-P MD4331-d1G-V3Q18-X-P marking Diskonchip MARKING G3 md4832-d512 ELPIDA K2 MD4811-D512-V3Q18-X MICRON mcp nand mcp elpida QUALCOMM Reference manual

    gck12

    Abstract: No abstract text available
    Text: WED9LAPC2C16V4BC White Electronic Designs 512K x 32 SSRAM / 512K x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V4BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 512K x 64 Synchronous


    Original     		PDF WED9LAPC2C16V4BC LUCTAPC640 WED9LAPC2C16V4BC WED9LAPC2C16V4BI gck12

    PD48

    Abstract: PD481850 lm 512
    Text: DATA SHEET DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 131,072 words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write function


    Original     		PDF PD481850 PD481850 100-pin S100GF-65-JBT PD481850. PD481850GF-JBT: PD48 lm 512

    512k x 8 chip block diagram

    Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
    Text: White Electronic Designs WED9LAPC3C16V8BC 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous


    Original     		PDF WED9LAPC3C16V8BC LUCTAPC640 WED9LAPC3C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC3C16V8BI 512k x 8 chip block diagram WED9LAPC2B16P8BC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.


    Original     		PDF PD4811650 256K-WORD 32-BIT 100-pin

    WED9LAPC2B16P8BC

    Abstract: WED9LAPC2C16V8BC
    Text: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES  DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous


    Original     		PDF WED9LAPC2C16V8BC LUCTAPC640 WED9LAPC2C16V8BC WED9LAPC2B16P8BC, 5M-1994. WED9LAPC2C16V8BI WED9LAPC2B16P8BC

    dba1

    Abstract: diode MARKING CODE A9 UPD481 diode MARKING A9
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.


    Original     		PDF PD4811650 256K-WORD 32-BIT PD4811650 100-pin dba1 diode MARKING CODE A9 UPD481 diode MARKING A9

    UPD4811650GF-A10-9BT

    Abstract: 0z1 marking
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.


    Original     		PDF PD4811650 256K-WORD 32-BIT PD4811650 100-pin UPD4811650GF-A10-9BT 0z1 marking

    Untitled

    Abstract: No abstract text available
    Text: WED48S8030E 2M x 8 Bits x 4 BANKS SYNCHRONOUS DRAM FEATURES DESCRIPTION „„ Single 3.3V power supply The WED48S8030E is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits. Synchronous design allows precise cycle control with the use of system clock, I/O


    Original     		PDF WED48S8030E WED48S8030E 100MHz

    Untitled

    Abstract: No abstract text available
    Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of


    Original     		PDF EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz)

    EDI416S4030A

    Abstract: No abstract text available
    Text: White Electronic Designs EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION „ Single 3.3V power supply „ Fully Synchronous to positive Clock Edge „ Clock Frequency = 100, 83MHz „ SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) „ Burst Operation


    Original     		PDF EDI416S4030A 1Mx16 EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks

    WED48S8030E

    Abstract: WED48S8030E10SI WED48S8030E8SI
    Text: WED48S8030E White Electronic Designs 2M x 8 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 125, 100MHz  SDRAM CAS# Latency = 2  Burst Operation The WED48S8030E is 67,108,864 bits of synchronous high


    Original     		PDF WED48S8030E 100MHz WED48S8030E WED48S8030E8SI WED48S8030E10SI 125MHz WED48S8030E10SI WED48S8030E8SI

    EDI416S4030A

    Abstract: 1Mx16bits
    Text: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES  Single 3.3V power supply  Fully Synchronous to positive Clock Edge  Clock Frequency = 100, 83MHz  SDRAM CAS Latentency = 3 100MHz , 2 (83MHz)
    Original     		PDF EDI416S4030A 1Mx16 83MHz 100MHz) 83MHz) EDI416S4030A EDI416S4030A10SI EDI416S4030A12SI 1Mx16bitsx4banks 1Mx16bits

    EDI416S4030A

    Abstract: No abstract text available
    Text: EDI416S4030A White Electronic Designs 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION n n n n n The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with


    Original     		PDF EDI416S4030A EDI416S4030A 83MHz 100MHz) 83MHz) EDI416S4030A10SI 1Mx16bitsx4banks 100MHz EDI416S4030A12SI

    D7678

    Abstract: WED416S8030A 2MX16x4 WED416S8030A10s
    Text: WED416S8030A White Electronic Designs 2Mx16x4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise


    Original     		PDF WED416S8030A 2Mx16x4 WED416S8030A 83MHz 100MHz) 83MHz) WED416S8030A10SI 2Mx16bitsx4banks 100MHz WED416S8030A12SI D7678 WED416S8030A10s

    SRA2210SF

    Abstract: KSR-2014-000
    Text: SRA2210SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF SRA2210SF OT-23F KSR-2014-000 -10mA, SRA2210SF KSR-2014-000

    13001 TRANSISTOR equivalent

    Abstract: 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000
    Text: SRA2210S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original     		PDF SRA2210S OT-23 KSR-2030-000 -10mA, 13001 TRANSISTOR equivalent 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000

    wf vqe 14 e

    Abstract: Wf vqe 14 WF vqe 14 c wf vqe 13 d wf vqe 21 CQY8 wf vqe 14 d
    Text: CQY80 N G Vishay Telefunken T Optocoupler with Phototransistor Output Description The CQY80N(G) series consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


    OCR Scan     		PDF CQY80 CQY80N CNY80NG 11-Jan-99 CNY80N wf vqe 14 e Wf vqe 14 WF vqe 14 c wf vqe 13 d wf vqe 21 CQY8 wf vqe 14 d

    DT1122G

    Abstract: dt1122 TCDT1120 DT1122G1
    Text: TCDT1120 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransis­ tor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using


    OCR Scan     		PDF TCDT1120 11-Ja TCDT112 TCDT112. DT1122G dt1122 DT1122G1

    et1600

    Abstract: No abstract text available
    Text: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse­ nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.


    OCR Scan     		PDF TCET1600 TCET4600 TCET1600/ TCET2600/ TCET4600 16-lead 11-Ja TCET2600 et1600

    c81-004

    Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
    Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class


    OCR Scan     		PDF ERC81-004 e18-ts 95t/R89 Shl50 c81-004 c81 004 Diode C81 004 C81004 ERC81 T151 T460 T810 T930