ELPIDA 512MB NOR FLASH
Abstract: nand mcp elpida MCP NOR FLASH SDRAM elpida Diskonchip MS08-D9SD7-B3 marking G3 QUALCOMM Reference manual nec 4 Banks x 1m x 32Bit Synchronous DRAM emblaze qualcomm 1100
Text: DiskOnChip-Based MCP Including DiskOnChip G3 and Mobile RAM Data Sheet, August 2004 • Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code
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97-DT-0304-00
ELPIDA 512MB NOR FLASH
nand mcp elpida
MCP NOR FLASH SDRAM elpida
Diskonchip
MS08-D9SD7-B3
marking G3
QUALCOMM Reference manual
nec 4 Banks x 1m x 32Bit Synchronous DRAM
emblaze
qualcomm 1100
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512k x 8 chip block diagram
Abstract: WED9LAPC2B16P8BC WED9LAPC3C16V8BC
Text: White Electronic Designs WED9LAPC3C16V8BC 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC3C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous
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WED9LAPC3C16V8BC
LUCTAPC640
WED9LAPC3C16V8BC
WED9LAPC2B16P8BC,
5M-1994.
WED9LAPC3C16V8BI
512k x 8 chip block diagram
WED9LAPC2B16P8BC
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WED9LAPC2B16P8BC
Abstract: WED9LAPC2C16V8BC
Text: WED9LAPC2C16V8BC White Electronic Designs 512K x 32 SSRAM / 1M x 64 SDRAM EXTERNAL MEMORY SOLUTION FOR LUCENT’S LUCTAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION The WED9LAPC2C16V8BC is a 3.3V, 512K x 32 Synchronous Pipeline SRAM and a 1M x 64 Synchronous
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WED9LAPC2C16V8BC
LUCTAPC640
WED9LAPC2C16V8BC
WED9LAPC2B16P8BC,
5M-1994.
WED9LAPC2C16V8BI
WED9LAPC2B16P8BC
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dba1
Abstract: diode MARKING CODE A9 UPD481 diode MARKING A9
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4811650 for Rev.K 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The µPD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits × 2 banks random access port.
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PD4811650
256K-WORD
32-BIT
PD4811650
100-pin
dba1
diode MARKING CODE A9
UPD481
diode MARKING A9
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Untitled
Abstract: No abstract text available
Text: WED48S8030E 2M x 8 Bits x 4 BANKS SYNCHRONOUS DRAM FEATURES DESCRIPTION Single 3.3V power supply The WED48S8030E is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 8 bits. Synchronous design allows precise cycle control with the use of system clock, I/O
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WED48S8030E
WED48S8030E
100MHz
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Untitled
Abstract: No abstract text available
Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of
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EDI416S4030A
1Mx16
EDI416S4030A
83MHz
100MHz)
83MHz)
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WED48S8030E
Abstract: WED48S8030E10SI WED48S8030E8SI
Text: WED48S8030E White Electronic Designs 2M x 8 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 125, 100MHz SDRAM CAS# Latency = 2 Burst Operation The WED48S8030E is 67,108,864 bits of synchronous high
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WED48S8030E
100MHz
WED48S8030E
WED48S8030E8SI
WED48S8030E10SI
125MHz
WED48S8030E10SI
WED48S8030E8SI
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EDI416S4030A
Abstract: 1Mx16bits
Text: EDI416S4030A White Electronic Designs 1Mx16 Bits x 4 Banks Synchronous DRAM DESCRIPTION FEATURES Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 100, 83MHz SDRAM CAS Latentency = 3 100MHz , 2 (83MHz)
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EDI416S4030A
1Mx16
83MHz
100MHz)
83MHz)
EDI416S4030A
EDI416S4030A10SI
EDI416S4030A12SI
1Mx16bitsx4banks
1Mx16bits
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SRA2210SF
Abstract: KSR-2014-000
Text: SRA2210SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2210SF
OT-23F
KSR-2014-000
-10mA,
SRA2210SF
KSR-2014-000
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13001 TRANSISTOR equivalent
Abstract: 13001 TRANSISTOR transistor 13001 CIRCUIT 2030 ic 5 pins 13001 b TRANSISTOR equivalent 13001 switching circuit transistor 13001 IC 2030 PIN CONNECTIONS SRA2210S KSR-2030-000
Text: SRA2210S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2210S
OT-23
KSR-2030-000
-10mA,
13001 TRANSISTOR equivalent
13001 TRANSISTOR
transistor 13001 CIRCUIT
2030 ic 5 pins
13001 b TRANSISTOR equivalent
13001 switching circuit
transistor 13001
IC 2030 PIN CONNECTIONS
SRA2210S
KSR-2030-000
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WED416S8030A
Abstract: WED416S4030A 2MX16x4 WED416S8030A10SI
Text: White Electronic Designs WED416S8030A 2Mx16x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply Fully Synchronous to positive Clock Edge Clock Frequency = 100, 83MHz SDRAM CAS Latentency = 3 100MHz , 2 (83MHz) Burst Operation
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WED416S8030A
2Mx16x
WED416S8030A
83MHz
100MHz)
83MHz)
WED416S8030A10SI
WED416S8030A12SI
2Mx16bitsx4banks
WED416S4030A
2MX16x4
WED416S8030A10SI
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Untitled
Abstract: No abstract text available
Text: EDI416S4030A 1Mx16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of
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EDI416S4030A
1Mx16
EDI416S4030A
83MHz
100MHz)
83MHz)
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Untitled
Abstract: No abstract text available
Text: K4S64323LF-S D N/U/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.3 June 2002 Rev. 1.3 June 2002 K4S64323LF-S(D)N/U/P CMOS SDRAM Revision History Revision 0.0 (Feb. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die datasheet. (VDD 2.5V, VDDQ 1.8V & 2.5V).
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K4S64323LF-S
2Mx32
90FBGA
100MHz,
32Bit
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Untitled
Abstract: No abstract text available
Text: K4S643233F-S D E/N/I/P CMOS SDRAM 2Mx32 SDRAM 90FBGA (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.3 July 2002 Rev. 1.3 July. 2002 K4S643233F-S(D)E/N/I/P CMOS SDRAM Revision History Revision 0.0 (Jan. 2002, Preliminary) • First generation of 2Mx32 SDRAM F-die 90FBGA datasheet (V DD/VDDQ 3.0V/3.0V, 3.3V/3.3V).
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K4S643233F-S
2Mx32
90FBGA
90FBGA
-75/1H/-1L.
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DT1122G
Abstract: dt1122 TCDT1120 DT1122G1
Text: TCDT1120 G Series Vishay Telefunken T Optocoupler with Phototransistor Output Description The TCDT1120(G) series consists of a phototransis tor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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TCDT1120
11-Ja
TCDT112
TCDT112.
DT1122G
dt1122
DT1122G1
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et1600
Abstract: No abstract text available
Text: TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arse nide i nf rared-emitti ng diodes i n a 4-lead up to 16-lead plastic dual inline package.
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TCET1600
TCET4600
TCET1600/
TCET2600/
TCET4600
16-lead
11-Ja
TCET2600
et1600
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c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class
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ERC81-004
e18-ts
95t/R89
Shl50
c81-004
c81 004
Diode C81 004
C81004
ERC81
T151
T460
T810
T930
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TCET110G
Abstract: No abstract text available
Text: TCET110. G up to TCET4100 Vishay Telefunken Optocoupler with Phototransistor Output Description TheTCETHO./ TCET2100/TCET4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCET110.
TCET4100
TCET2100/TCET4100
16-lead
11-Ja
TCET2100
TCET4100
TCET110G
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Surface Mount Device A006
Abstract: S281A HSMS-280A
Text: WhoI HEWLETT 1"KM PACKARD Surface Mount RF Schottky Diodes in SOT-323 SC-70 Technical Data HSMS-280A Series HSMS-281A Series HSMS-282A Series Features • S u rfa ce M ou n t SO T-323 P ack age Package Lead Code Identification (Top View) • Low Turn-O n V oltage
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OT-323
SC-70)
HSMS-280A
HSMS-281A
HSMS-282A
T-323
OT-323
5965-4705E
Surface Mount Device A006
S281A
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smd marking code fj
Abstract: smd marking 5R marking code H1 SMD SMD MARKING CODE vk smd diode code H1 marking code fj SMD diode raa marking code SMD DIODE BOOK smd diode code marking RA smd code marking LP
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE10P3 U nit: mm r Weight 0.326g Typ 30 V 10 A i 2 4 Feature 6.6 • SMD • SMD • Î S ® V f=0.4V • Ultra-Low V f=0.4V • Reverse connect protection for DC power source • DC O R-output
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DE10P3
32fig
50HzX'
smd marking code fj
smd marking 5R
marking code H1 SMD
SMD MARKING CODE vk
smd diode code H1
marking code fj SMD
diode raa marking code
SMD DIODE BOOK
smd diode code marking RA
smd code marking LP
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Untitled
Abstract: No abstract text available
Text: fS h l IVI V IA iv « * * * * « :« ' " : Serie» Absolute Maximum R atings mI t e » s se# * Symbol S to ra g e T em p eratu re a-è-aeaj* O perating Ju n c tio n T em peratur* * yM J± Maximum O f f- s ta te Voltage - * r - y * > n ì& S u rg e O n -sta te C u rren t
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Untitled
Abstract: No abstract text available
Text: A b s o lu te M axim um R a tin g s ^ ,. : - b m a n Item S to ra g e T em peratur» S '& g ß i ä * O perating Ju n c tio n T em p erature * y & l± Maximum O f f - s ta te V oltage -t > / •? X+ > * Critical Rate of Rise of O n-state Current « T stg -4 0 -1 2 5
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optocoupler 207
Abstract: No abstract text available
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo transistor optically coupled to a gallium arsenide infra red-emitting diode in a 6-lead plastic dual inline package.
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MCT62H
MCT62H
11-Ja
optocoupler 207
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c3 MARKING CODE
Abstract: c3 marking
Text: T e m ic J/SST lll Series Siliconix N-Channel JFETs J ill J112 J113 SST111 SST112 SST113 Product Summary P a r t N u m b er V g S o£F (V) r DS(on) M ax (Q ) ii)(ofr> i y p (pA) toN Typ (n s) J/S S T lll - 3 to - 1 0 30 5 4 J/SST112 - 1 to - 5 50 5 4 J/SST113
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SST111
SST112
SST113
J/SST112
J/SST113
seeAN105,
P-37653--Rev.
J/SST111
J/SST111
J/SST112
c3 MARKING CODE
c3 marking
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