INTEL 450NX
Abstract: intel 8042 8042 intel kbc intel G31 circuit diagram LXG Series DIODE C04 06 intel 8042 port 64h pciset datasheet transistor w04 450GX
Text: intel Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998, 1999 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
82451NX
INTEL 450NX
intel 8042
8042 intel kbc
intel G31 circuit diagram
LXG Series
DIODE C04 06
intel 8042 port 64h
pciset datasheet
transistor w04
450GX
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intel 8042
Abstract: 450GX 450NX 82451NX 82452NX 82453NX 82454NX CL-CK L10
Text: intel Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Order Number: 243771-004 June 1998 Intel Corporation 1998 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
82451NX
intel 8042
450GX
CL-CK L10
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MB81G83222-012
Abstract: MB81G83222-010 MB81G83222-015
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12101-2E MEMORY CMOS 2 x 128K × 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CMOS 2 BANKS OF 131,072-WORDS × 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12101-2E
MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
F9607
MB81G83222-012
MB81G83222-010
MB81G83222-015
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TSOP54
Abstract: tsop-54 MA3.1 DMD20
Text: 1 2 VCC3 3 4 5 6 7 8 MEM_VCC3 JP43 1 2 MEM_VCC3 JP_SMT4_DFS C160 10U 1210 JP45 1 2 JP_SMT4_DFS C127 0.1U 0603B ON BOARD SDRAM 0 32 MB C140 0.1U 0603B C139 0.1U 0603B C141 0.1U 0603B C156 0.1U 0603B C171 0.1U 0603B C155 0.1U 0603B C170 0.1U 0603B JP46 1 A
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100MHZ
16bit
0603B
0603B
TSOP54
tsop-54
MA3.1
DMD20
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-4E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32-Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12102-4E
MB81G163222-70/-80/-10
144-Word
32-Bit
MB81G163222
32-bit
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DS05-12102-3E
Abstract: mb81g163222-80
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-3E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12102-3E
MB81G163222-70/-80/-10
144-Word
MB81G163222
32-bit
DS05-12102-3E
mb81g163222-80
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-4E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32-Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12102-4E
MB81G163222-70/-80/-10
144-Word
32-Bit
MB81G163222
32-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12102-3E MEMORY CMOS 2 x 256K × 32 BIT SYNCHRONOUS GRAPHIC RAM MB81G163222-70/-80/-10 CMOS 2-Bank of 262,144-Word × 32 Bit Synchronous Graphic Random Access Memory • DESCRIPTION The Fujitsu MB81G163222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12102-3E
MB81G163222-70/-80/-10
144-Word
MB81G163222
32-bit
D-63303
F9802
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PDF
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MB81G83222-010
Abstract: MB81G83222-012 MB81G83222-015 MB81G83222PQ 216-0040
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12101-2E MEMORY CMOS 2 x 128K × 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CMOS 2 BANKS OF 131,072-WORDS × 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12101-2E
MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
F9703
MB81G83222-010
MB81G83222-012
MB81G83222-015
MB81G83222PQ
216-0040
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Ras 1210
Abstract: MB084CJ00TASN60 MB084CT00TASN60 DRAM 4M x 8
Text: Order this document by 5VEDOU8S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 8 5 V, EDO, Unbuffered DRAM Single-In-Line Memory Module SIMM 4 Megabyte 4M x 8 (4MB) SOJ 30–LEAD SIMM CASE 839A–01 • JEDEC–Standard 30–Lead Single–In–Line Memory Module (SIMM)
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MB084CJ00TASN60
MB084CT00TASN60
Ras 1210
MB084CJ00TASN60
MB084CT00TASN60
DRAM 4M x 8
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Ras 1210
Abstract: Hitachi DSA00164 Nippon capacitors
Text: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-776A Z Rev. 1.0 Apr. 23, 1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56SW864ES-6/7
608-word
64-bit
ADE-203-776A
HB56SW864ES
16-Mbit
HM51W16405)
16-bit
74ALVCH16244)
Ras 1210
Hitachi DSA00164
Nippon capacitors
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Ras 1210
Abstract: Hitachi DSA00166 Nippon capacitors
Text: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-776A Z Rev. 1.0 Apr. 23, 1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56SW864ES-6/7
608-word
64-bit
ADE-203-776A
HB56SW864ES
16-Mbit
HM51W16405)
16-bit
74ALVCH16244)
Ras 1210
Hitachi DSA00166
Nippon capacitors
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Ras 1210
Abstract: No abstract text available
Text: SMART SM5800140U1EUGU Modular Technologies March 26, 1997 8MByte 1M x 80 DRAM Module - 1Mx4 based 168-pin DIMM, Buffered, ECC Features Part Numbers • • • • • • • • • • • SM580014001EUGU SM580014011EUGU SM580014081EUGU SM580014091EUGU
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SM5800140U1EUGU
168-pin
SM580014001EUGU
SM580014011EUGU
SM580014081EUGU
SM580014091EUGU
60/70/80ns
300mil
AMP-390052-1
1Mx40
Ras 1210
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jeida dram 88 pin
Abstract: No abstract text available
Text: IB M 1 1 J 4 3 2 0 C N 4M x 32 3.3V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: Single 3.3V, ± 0.3V Power Supply All inputs buffered except RAS and DATA inputs Multiple RAS inputs for x16 or x32 selectability 12/10 Addressing Row/Column
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88Pin
130ns
256ms
IBM11J4320CN
IBM11J4320CN
jeida dram 88 pin
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TB 1226 BN
Abstract: 531 T70 n03 0AS001 B05AD 2U 34
Text: in y Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451 NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998,1999 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
TB 1226 BN
531 T70 n03
0AS001
B05AD
2U 34
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Untitled
Abstract: No abstract text available
Text: HM538123 Series 131,072-Word x 8-Bit Multiport CMOS Video RAM • DESCRIPTION HM538123 Series The HM538123 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM and SAM operate independently and asynchronously. It can transfer data between
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HM538123
072-Word
128k-word
256-word
HM538123.
CP-40D)
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Untitled
Abstract: No abstract text available
Text: Order this document by 5VEDOU8S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M X 8 5 V, EDO, Unbuffered DRAM Single-ln-Line Memory Module SIMM 4 Megabyte • JEDEC-Standard 30-Lead Single-ln-Line Memory Module (SIMM) • Single 5 V Power Supply, TTL-Compatible Inputs and Outputs
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30-Lead
MB084CJ00TASN60
MB084CT00TASN60
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514256A
Abstract: l 7251 3.1
Text: nOTOROLA M SC { N E M O R Y / A S I bSE D • b 3 b ? 5 S l 00flT203 325 M O T O R O LA 514256A Advance Information Commercial Plus and Mil/Aero Applications 256K x 4 CMOS Dynamic RAM Page Mode E L E C TR IC A LLY T E S T E D PER: M P G 514256A The 514256A is a 1.0^ CMOS high-speed, dynamic random access memory.
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00flT203
14256A
514256A
l 7251 3.1
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A Y S / n SIE D 4 4 ^ 5 0 3 o o n s o a HM538123 Series-131,072-Word X 8-Bit Multiport CMOS Video RAM T - HITE 400 4 6 - 2 3 - Z b • DESCRIPTION The HM538123 is a 1-Mbit multiport video RAM equipped with a 128k-word x
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HM538123
Series---------------------131
072-Word
128k-word
256-word
TTP-20D
TTP-20DR
54aax
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Nippon capacitors
Abstract: No abstract text available
Text: S— ' M- HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module ADE-203-776A Z Rev. 1.0 Apr. 23, 1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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OCR Scan
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HB56SW864ES-6/7
608-word
64-bit
ADE-203-776A
HB56SW864ES
16-Mbit
HM51W16405)
16-bit
74ALVCH16244)
Nippon capacitors
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ras 1210
Abstract: ras- 1210
Text: ADVANCE MT4LC2M8B1 S MEG X 8 DRAM M IC R O N 2 DRAM 2 MEG x 8 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • JEDEC- and industry-standard x8 pinouts, timing, functions and packages • High-performance CM OS silicon-gate process
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200mW
048-cycle
28-Pin
A0-A10;
ras 1210
ras- 1210
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 2 MEG TECHNOLOGY. INC X MT9LD T 272(X)(S) 72 DRAM MODULE 2 MEG x 72 DRAM MODULE 16 MEGABYTE, ECC, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE FEATURES 168-Pin DIMM (DE-17) SOJ Version (DE-18) TSOP Version • Timing 60ns access
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168-Pin
DE-17)
DE-18)
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22jL
Abstract: No abstract text available
Text: HM538123 Series 131,072-Word x 8-Bit Multiport CMOS Video RAM • DESCRIPTION HM538123 Series The HM538123 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM and SAM operate independently and asynchronously. It can transfer data between
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OCR Scan
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HM538123
072-Word
128k-word
256-word
HM538123.
22jL
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-776A Z Rev. 1.0 Apr. 23,1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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OCR Scan
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HB56SW864ES-6/7
608-word
64-bit
ADE-203-776A
HB56SW864ES
HB56SW
864ES
16-Mbit
HM51W16405)
16-bit
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