RB TRANSISTOR Search Results

RB TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RB TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MB9B300B Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00024-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B300B Series MB9BF304NB/RB, F305NB/RB, F306NB/RB  DESCRIPTION The MB9B300B Series are a highly integrated 32-bit microcontroller that target for high-performance and	Original	DS706-00024-2v0-E 32-bit MB9B300B MB9BF304NB/RB, F305NB/RB, F306NB/RB	PDF
MB9BF506NB Abstract: MB9BF505RB MB9BF506RB Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00021-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B500B Series MB9BF504NB/RB, F505NB/RB, F506NB/RB  DESCRIPTION The MB9B500B Series are a highly integrated 32-bit microcontroller that target for high-performance and	Original	DS706-00021-2v0-E 32-bit MB9B500B MB9BF504NB/RB, F505NB/RB, F506NB/RB MB9BF506NB MB9BF505RB MB9BF506RB	PDF
MB9BF305RB Abstract: MB9BF306NB MB9BF304RB MB9BF306NBPMC MB9B300B Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00024-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B300B Series MB9BF304NB/RB, F305NB/RB, F306NB/RB  DESCRIPTION The MB9B300B Series are a highly integrated 32-bit microcontroller that target for high-performance and	Original	DS706-00024-2v0-E 32-bit MB9B300B MB9BF304NB/RB, F305NB/RB, F306NB/RB MB9BF305RB MB9BF306NB MB9BF304RB MB9BF306NBPMC	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00021-2v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9B500B Series MB9BF504NB/RB, F505NB/RB, F506NB/RB  DESCRIPTION The MB9B500B Series are a highly integrated 32-bit microcontroller that target for high-performance and	Original	DS706-00021-2v0-E 32-bit MB9B500B MB9BF504NB/RB, F505NB/RB, F506NB/RB	PDF
500w car audio amplifier circuit diagram Abstract: 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on BRIDGED RB-TA3020-1, BRIDGED RB-TA3020-2, BRIDGED RB-TA3020-3 CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information-Preliminary	Original	RB-TA3020-1, RB-TA3020-2, RB-TA3020-3 RB-TA3020 TA3020 RB-TA3020, MURS120T3 STW34NB20 TA3020 500w car audio amplifier circuit diagram 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram	PDF
Untitled Abstract: No abstract text available Text: MB9B500B Series 32-bit ARMTM CortexTM-M3 based Microcontroller MB9BF504NB/RB, F505NB/RB, F506NB/RB Data Sheet Full Production Publication Number MB9BF504NB-DS706-00021 CONFIDENTIAL Revision 2.1 Issue Date January 31, 2014 D a t a S h e e t MB9BF504NB-DS706-00021-2v1-E, January 31, 2014	Original	MB9B500B 32-bit MB9BF504NB/RB, F505NB/RB, F506NB/RB MB9BF504NB-DS706-00021 MB9BF504NB-DS706-00021-2v1-E,	PDF
MB9B300B Abstract: No abstract text available Text: MB9B300B Series 32-bit ARMTM CortexTM-M3 based Microcontroller MB9BF304NB/RB, F305NB/RB, F306NB/RB Data Sheet Full Production Publication Number MB9BF304NB-DS706-00024 CONFIDENTIAL Revision 2.1 Issue Date January 31, 2014 D a t a S h e e t MB9BF304NB-DS706-00024-2v1-E, January 31, 2014	Original	MB9B300B 32-bit MB9BF304NB/RB, F305NB/RB, F306NB/RB MB9BF304NB-DS706-00024 MB9BF304NB-DS706-00024-2v1-E,	PDF
tp2350 Abstract: J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor TK2350 Text: Tr i path Technol ogy, I nc. - Technical Information RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 1.5 June 2002 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier	Original	RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350, RB-TK2350-1 /-21V /-39V tp2350 J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor	PDF
TP2350B Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from	Original	RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350-1 /-21V /-39V /-35V TP2350B J200 mosfet tp2350 TRIPATH TC2001 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology	PDF
TA3020 Abstract: TRIPATH TA3020 EB-TA3020 ST C212 J200 mosfet a3020 TRIPATH TECHNOLOGY TA3020 capacitor 4.7uF 100v crossover passive speaker Bridged RB-TA3020 dk qg Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TA3020-1 RB-TA3020-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 3.0- March 2002 GENERAL DESCRIPTION The RB-TA3020 reference board is based on the TA3020 digital audio power	Original	RB-TA3020-1 RB-TA3020-2 RB-TA3020 TA3020 RB-TA3020, /-21V /-39V ERG-2SJ330 TRIPATH TA3020 EB-TA3020 ST C212 J200 mosfet a3020 TRIPATH TECHNOLOGY TA3020 capacitor 4.7uF 100v crossover passive speaker Bridged RB-TA3020 dk qg	PDF
Untitled Abstract: No abstract text available Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220	Original	O-220	PDF
Untitled Abstract: No abstract text available Text: 699440 High Voltage Power Darlington Transistor 699440 High Voltage Power Darlington Transistor Features • Built-in Resistor at Base-Emitter: R1 Typ. = 2000Ω • Built-in Resistor at Base: RB(Typ.) = 700±100Ω Equivalent Circuit C B RB 1 1.Base R1 TO-220	Original	O-220	PDF
TPS1035 Abstract: RCA Transistor "Audio Power Amplifier" Application Note Tripath Technology 0.1u 50v 2.2uF 10V electrolytic capacitor TRIPATH TK2070 47uf, 25v electrolytic capacitor footprint amidon RESISTOR FOOTPRINT 805 Text: Tripath Technology, Inc. – Technical Information RB-TK2070 2 X 70W CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD Technical Information- Board Rev. 2.0 Revision 1.1 – APRIL 2004 GENERAL DESCRIPTION The RB-TK2070 Revision 2.0 is a bridged stereo 70W continuous average power per channel audio	Original	RB-TK2070 RB-TK2070 TK2070 TK2070, 680uF MURS105T3 TPS1035 TPS1035 RCA Transistor "Audio Power Amplifier" Application Note Tripath Technology 0.1u 50v 2.2uF 10V electrolytic capacitor TRIPATH 47uf, 25v electrolytic capacitor footprint amidon RESISTOR FOOTPRINT 805	PDF
100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM Abstract: TP2350B 200w car audio amplifier mosfet based ac drive ckt diagram NS 200w audio amplifier circuit diagram professional audio limiter schematics 250w audio amplifier circuit diagram Tp2350 200W Audio Amplifier with MOSFET schematic diagram professional audio power amplifier schematics Text: Tri pat h Tec hnol og y, I nc. - Te c hni cal I nf orm at ion RB-TDA1400 SINGLE CHANNEL CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD Technical Information–Board & Schematic Revision 4.0 Document Revision 1.3 – February 2006 GENERAL DESCRIPTION The RB-TDA1400 Reference Design is a single channel amplifier designed to provide a simple and	Original	RB-TDA1400 RB-TDA1400 TDA1400 TDA1400, 100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM TP2350B 200w car audio amplifier mosfet based ac drive ckt diagram NS 200w audio amplifier circuit diagram professional audio limiter schematics 250w audio amplifier circuit diagram Tp2350 200W Audio Amplifier with MOSFET schematic diagram professional audio power amplifier schematics	PDF

FJP9100 Abstract: NPN Transistor 600V TO-220 Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit	Original	FJP9100 O-220 FJP9100 NPN Transistor 600V TO-220	PDF
J9100 Abstract: No abstract text available Text: FJP9100 FJP9100 High Voltage Power Darlington Transistor • Built-in Resistor at Base-Emitter : R1 Typ. =2000Ω • Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Darlington Transistor Equivalent Circuit	Original	FJP9100 O-220 FJP9100 O-220-3 FJP9100TU J9100	PDF
IGBT based voltage source converter Abstract: matrix converter bi-directional switches IGBT inverters circuit diagram igbt diode matrix diagram "bi-directional switches" IGBT SiC IPM inverter circuit using IGBT module Mitsubishi SiC IPM module diode gen 52 Text: Application Characteristics of an Experimental RB-IGBT Reverse Blocking IGBT Module E. R. Motto, J. F. Donlon, M. Tabata, H. Takahashi, Y. Yu, G. Majumdar * Powerex Incorporated, Youngwood, Pennsylvania, USA * Mitsubishi Electric Power Semiconductor Device Works, Fukuoka, Japan	Original		PDF
2SA1406 Abstract: 2SA1406-SPICE 2SA140 Text: 2SA1406 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 16.52f A ISC 53.00f A BF 170.2 NC 2.00 NF 990.0m RB 100.0m ohm VAF 40.0 V IRB 40.00m A IKF 50.85m A RBM 100.0m ohm ISE 34.34f A RE 70.00m ohm	Original	2SA1406 27deg 2SA1406 2SA1406-SPICE 2SA140	PDF
Untitled Abstract: No abstract text available Text: SEfllTRON INDUSTRIES LTD M3E T> 613700^ QüOülfiñ 1 ISLCB - T ‘- 2 ' 3 » - 0 ^ SERIES Bridge Rectifiers Type* PIV per leg Average output DC RB 5/1 RB 20/1 RB 40/1 RB 80/1 RB 100/1 50 200 400 800 1000 lamp lamp lamp lamp lamp 1—11 13-1 The encapsulation in epoxy resin offers high resistance to	OCR Scan	1B05J05 1B10J DO-35 DO-41 DO-15 DO-201AD	PDF
MSI Electronics 7502 Abstract: No abstract text available Text: Preliminary W89C982AF X rB F E ie c iro r; ic s C orp . INTEGRATED MULTIPLE REPEATER II GENERAL DESCRIPTION. 2 FEATURES. 2	OCR Scan	W89C982AF CAS5134, 852-27S520S4 8S6-3-579264« MSI Electronics 7502	PDF
Untitled Abstract: No abstract text available Text: FORWARD INTCBNAHONAL ELECTRONICS LID . BC635 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Be636 ABSOLUTE MAXIMUM RATINGS at T«nh-2<»C Characteristic Collector-Emitter Voltage at Rb^ IK Q	OCR Scan	BC635 Be636 300uS, 100uA 150mA 500mA 500mA 30MHz	PDF
Untitled Abstract: No abstract text available Text: BUD742 wmmt Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A	OCR Scan	BUD742 BUD742 BUD742-SMD 20-Jan-99	PDF
smd transistor ISS Abstract: HA 1370* ic BUD742 smd transistor 312 smd transistor JJ Text: w m m ▼ BUD742 f Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature • Planar passivation • Optimized RB S 0 A	OCR Scan	BUD742 BUD742 BUD742-SMD 20-Jan-99 20-Jan-99 smd transistor ISS HA 1370* ic smd transistor 312 smd transistor JJ	PDF
Untitled Abstract: No abstract text available Text: J M mm ¡¡¡f ! 2SB621.A 2SD592,A rB Hl I SILICON TRANSISTORS T O -9 2 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2SB621 2SD592 /2SD592 2SB621A/2SD592A	PDF

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RB TRANSISTOR Search Results

RB TRANSISTOR Result Highlights (5)

RB TRANSISTOR Datasheets Context Search

MB9B300B

MB9BF506NB

MB9BF305RB

Untitled

500w car audio amplifier circuit diagram

Untitled

MB9B300B

tp2350

TP2350B

TA3020

Untitled

Untitled

TPS1035

100v 200W AUDIO AMPLIFIER CIRCUIT DIAGRAM

FJP9100

J9100

IGBT based voltage source converter

2SA1406

Untitled

MSI Electronics 7502

Untitled

Untitled

smd transistor ISS

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