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    RB441Q 10V Search Results

    RB441Q 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    RB441Q 10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RB441Q-40

    Abstract: RB441Q40 ROHM RB441Q
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 !External dimensions Units : mm !Applications Low current rectification CATHODE BAND (BLACK) φ0.4±0.1 !Features 1) Glass sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs.


    Original     		PDF RB441Q-40 100mA) DO-34 RB441Q-40 RB441Q40 ROHM RB441Q

    RB441Q 10V

    Abstract: RB441Q-40
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 !External dimensions Units : mm !Applications Low current rectification CATHODE BAND (BLACK) φ0.4±0.1 !Features 1) Glass sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs.


    Original     		PDF RB441Q-40 100mA) DO-34 RB441Q 10V RB441Q-40

    RB441Q 10V

    Abstract: RB441Q-40
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 !External dimensions Units : mm !Applications Low current rectification CATHODE BAND (BLACK) φ0.4±0.1 !Features 1) Glass sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs.


    Original     		PDF RB441Q-40 100mA) DO-34 RB441Q 10V RB441Q-40

    Untitled

    Abstract: No abstract text available
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3


    Original     		PDF RB441Q-40 DO-34

    RB441Q-40

    Abstract: diode T-77 T-77 do-34 rohm
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3


    Original     		PDF RB441Q-40 DO-34 RB441Q-40 diode T-77 T-77 do-34 rohm

    Untitled

    Abstract: No abstract text available
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3


    Original     		PDF RB441Q-40 DO-34

    RB441Q-40

    Abstract: ROHM RB441Q
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm 㪫㪰㪧㪜㩷㪥㪦㪅㩷㩿㪙㪣㪘㪚㪢㪀 㪚㪘㪫㪟㪦㪛㪜㩷㪙㪘㪥㪛㩷㩿㪙㪣㪘㪚㪢㪀 㱢㪇㪅㪋㫧㪇㪅㪈


    Original     		PDF RB441Q-40 RB441Q-40 ROHM RB441Q

    RB441Q-40

    Abstract: No abstract text available
    Text: RB441Q-40 SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES For Low Current Rectification Features • Low forward rise voltage VF • Small pitch enables insertion on PCBs. • Glass sealed envelope for high reliability. (MSD) • Absolute Maximum Ratings (Ta = 25oC)


    Original     		PDF RB441Q-40 RB441Q-40

    RB441Q-40

    Abstract: No abstract text available
    Text: RB441Q-40 SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES For Low Current Rectification Features • Low forward rise voltage VF • Small pitch enables insertion on PCBs. • Glass sealed envelope for high reliability. (MSD) • Absolute Maximum Ratings (Ta = 25oC)


    Original     		PDF RB441Q-40 RB441Q-40

    RB441Q-40

    Abstract: No abstract text available
    Text: RB441Q-40 SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES For Low Current Rectification Features • Low forward rise voltage VF • Small pitch enables insertion on PCBs. • Glass sealed envelope for high reliability. (MSD) • Absolute Maximum Ratings (Ta = 25oC)


    Original     		PDF RB441Q-40 RB441Q-40

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components RB441Q Features • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)


    Original     		PDF RB441Q DO-35 DO-35

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components RB441Q Features • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)


    Original     		PDF RB441Q DO-35 DO-35

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components RB441Q Features • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)


    Original     		PDF RB441Q J-STD-020C DO-35 DO-35

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components RB441Q Features Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates Compliant. See ordering information)


    Original     		PDF RB441Q DO-35 DO-35

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# RB441Q Features • • • 0.1 Amp Schottky Barrier Rectifier 40 Volts Low Current, Low VF Glass Sealed Envelope for High Reliability MSD


    Original     		PDF RB441Q DO-35 DO-35

    F100mA

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# RB441Q Features • • • 0.1 Amp Schottky Barrier Rectifier 40 Volts Low Current, Low VF Glass Sealed Envelope for High Reliability MSD


    Original     		PDF RB441Q DO-35 DO-35 F100mA

    Untitled

    Abstract: No abstract text available
    Text: $ K/D iodes RB441Q RB441Q v IJ n > I fc°£ * v t M & v a "J h * - n U - K Silicon Epitaxial Schottky Barrier Diodes • iM & iÜ IS I/Dimensions Unit : mm • « « 1) a =7*% 3) fiü T 'Æ 5 o • Features 1) Glass sealed type . 2) Inserting by small pitch is avail­


    OCR Scan     		PDF RB441Q 100mA DQ10731

    RB441Q40

    Abstract: No abstract text available
    Text: Diodes Schottky Barrier Diode RB441Q-40 •Applications •External dimensions Units: mm Low current rectification •Features Schottky barrier diodes 1) Glass sealed envelope 2)Small pitch enables insertion on PCBs 3)High reliability •Construction Silicon epitaxial


    OCR Scan     		PDF RB441Q-40 10mter 100mA B441Q-40 RB441Q40

    Untitled

    Abstract: No abstract text available
    Text: Diodes Schottky Barrier Diode RB441Q-40 •A p p lic a tio n s • E x te rn a l dim ensions Units: mm Low current rectification Schottky barrier diodes • F e a tu re s 1)Glass sealed envelope 2)Small pitch enables insertion on PCBs 3 )H igh reliability


    OCR Scan     		PDF RB441Q-40 100mA

    441Q

    Abstract: RB441Q
    Text: K /D iod es RB441Q R B 441Q y ‘j 3 > i e ^ y 7 ; i f v 3 7 K Silicon Epitaxial Schottky Barrier Diodes • irJfi \n £ 0 /D im e n s io n s Unit : mm 1) 3) i^jfàÎMT'ifo -5 o • Features 1) Glass sealed type . 2) Inserting by small pitch is avail­ able.


    OCR Scan     		PDF RB441Q 441Q RB441Q

    ROHM RB441Q

    Abstract: No abstract text available
    Text: RB441Q £-'1'^' — K / D i o d e s H ^ c ^ / U n d B r Development v U a "j h 'J T7^ < t - K Silicon Epitaxial Schottky Barrier Diode • il-Jfi ^H ill/D im ensions (Unit : mm) • « * 1) il'M U ? Æ > 3 0 2) ^ J 't i- y iT 'S I S Î f A A ^ H Ë o C A T H O D E BAND


    OCR Scan     		PDF RB441Q 100mA ROHM RB441Q