disjoncteur differentiel
Abstract: interruptor diferencial VAL-CP-350-ST-GY VAL-CP-350 esquema
Text: ESPAÑOL FRANÇAIS ENGLISH DEUTSCH VAL-CP-RCD-. es una combinación de un módulo de protección contra sobretensiones SPD Class II para la alimentación eléctrica de 230 V y de un interruptor diferencial (FI/RCD, tipo A). VAL-CP-RCD-. est une combinaison entre un
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VAL-CP/RCD-3S/40/0
VAL-CP-RCD-3S/40/0
disjoncteur differentiel
interruptor diferencial
VAL-CP-350-ST-GY
VAL-CP-350
esquema
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61008
Abstract: AC264
Text: Extract from the online catalog VAL-CP-RCD-3S/40/0.03 Order No.: 2882802 Combination of pluggable type 2 arrester and residual current circuit breaker RCD switch for 3-phase power supply networks (5-conductor
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VAL-CP-RCD-3S/40/0
TT-2011)
61008
AC264
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2CSB202101R1250
Abstract: DDA202 DDA204 2CSB204101R1400 2CSB204101R1250 2CSB203101R5250 2CSB204101R3400 DDA203 2CSB202101R2250 2CSB202101R1400
Text: System Selection tables pro M compact RCD-blocks DDA 200 series A y type DDA 200 A DDA 200 A type A Function: RCD-block for assembly on site with MCBs S 200 series. Protection against the effects of sinusoidal alternating and direct pulsating earth fault currents; protection against indirect contacts
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DDA202
2CSB202101R0250
2CSB202101R2250
2CSB202101R1630
2CSB202101R1250
2CSB202101R1400
2CSB202101R1250
DDA204
2CSB204101R1400
2CSB204101R1250
2CSB203101R5250
2CSB204101R3400
DDA203
2CSB202101R2250
2CSB202101R1400
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ac dc led constant current driver
Abstract: No abstract text available
Text: WHITEPAPER | Jul 2011 HIGH POWER LED AND DC/DC-DRIVER APPLICATIONS RECOM Electronic GmbH | Otto-Hahn-Str. 60 | D-63303 Dreieich | Tel. +49 6103 30007-0 | [email protected] | www.recom-electronic.com WP HIGH POWER LED AND RCD APPLICATIONS RECOM Electronic Whitepaper
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D-63303
RCD-24-PL)
RCD-24-PL
RCD-24/W-Vref)
ac dc led constant current driver
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CM75
Abstract: cm150 CM600HU-24F diode snubber IGBT snubber CM100 CM200 CM300 CM400 CM400HU-24F
Text: SWITCHING ENERGY 1200V CLASS F-SERIES IGBT MODULE CM400HU-24F CM600HU-24F 101 Effected by RCD Cross Snubber TURN-ON CM600*-24F CM400*-24F 102 CM100*-24F CM75*-24F 100 CM50*-24F 101 CM300*-24F CM200*-24F CM75*-24F CM50*-24F TURN-OFF CM150*-24F CM100*-24F CONDITIONS:
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CM400HU-24F
CM600HU-24F
CM600
CM400
CM100
CM300
CM200
CM150
U-24F
CM75
CM600HU-24F
diode snubber
IGBT snubber
CM400HU-24F
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VJ0805A271JXB
Abstract: UCC27324 UCC27322 VJ1206Y473K 2a mosfet driver TL431CPKR Payton TPS2829 UCC35705 PANASONIC CAPACITOR
Text: User’s Guide 48-V to 3.3-V RCD Forward with UCC35705 Voltage-Mode Control and Self-Driven Synchronous Rectification User’s Guide SLUU141 – March 2003 EVM IMPORTANT NOTICE Texas Instruments TI provides the enclosed product(s) under the following conditions:
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UCC35705
SLUU141
VJ0805A271JXB
UCC27324
UCC27322
VJ1206Y473K
2a mosfet driver
TL431CPKR
Payton
TPS2829
PANASONIC CAPACITOR
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PFIM
Abstract: PLS-6 PLS6-B12 PLS6-B25 BSEN60898 sg1900 630848 SG19002 1NB01 SG180
Text: Consumer Units tra Combinations Consumer Units Designed and built to the latest British and European standards to meet the needs of the building and refurbishment markets. A variety of MCB’s, RCD’s and RCBO’s offer outstanding performance with 6kA and 10kA
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PKS6-6/1N/D/001
PKS6-8/1N/D/001
PKS6-10/1N/D/001
PKS6-13/1N/D/001
PKS6-16/1N/D/001
PKS6-20/1N/D/001
PFIM
PLS-6
PLS6-B12
PLS6-B25
BSEN60898
sg1900
630848
SG19002
1NB01
SG180
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RCD snubber
Abstract: IGBT snubber snubber of scr snubbers RCD snubber for igbt snubber snubber circuit snubber capacitor for low frequency RCD Components snubber circuits
Text: IGBT SNUBBERS Capacitors are needed in IGBT circuits to protect the module from damage from transient voltages. Decoupling the parasitic bus inductance with a low inductance capacitor mounted directly to the IGBT module does this. In high power modules a clamped RCD snubber is required. Here the snubber diode conducts when the
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26946
Abstract: 26924 26960 26948 shunt trip 125vdc shunt trip coil 26947 26923 415VAC OF - 26924
Text: Electrical auxiliaries for 2 and 4 pole RMGs Arrangement of auxiliaries O F + + + + O F O F Auxiliary switch OF Undervoltage trip module MN Shunt trip module MX Auxiliary switch OF.S RCD + + MX or MN + + O F S R M G MX or MN O F S R M G MX or MN + O F S +
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FK800
Abstract: FE250 FE160 TT35 TT160 fg400
Text: GE Consumer & Industrial Power Protection Record Plus Dimensions GE imagination at work Record Plus FD & FE frame G.2 Breakers G.3 Phase separators G.3 Residual current devices RCD’s G.5 Electrical operators G.6 Rotary handles G.8 Plug-in version G.9 Drawout version
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ElecTT0210
I/3198/E/E
FK800
FE250
FE160
TT35
TT160
fg400
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digital VOICE RECORDER
Abstract: VOICE RECORDER circuits VOICE RECORDER playback system voice synthesis pwm PWM Microchip Speech VOICE RECORDER digital VOICE RECORDER data sheet voice recorder chip Voice Record voice recorder circuit
Text: PIC17C756A Market: Voice Synthesis/Storage/Replay Digital Voice Recorder Application Brief Speech Output PWM Speech Input A/D PIC USART I2C PC Upload 17C 756 A LCD Display I/O A/D Keypad On Del Str Off Rcd Vol Serial EEPROM APPLICATION DESCRIPTION Digital voice recorders need a high resolution, high
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PIC17C756A
PIC17C756A
10-bit
PIC17C75X
DS30264A)
DS30602A
digital VOICE RECORDER
VOICE RECORDER circuits
VOICE RECORDER playback system
voice synthesis pwm
PWM Microchip Speech
VOICE RECORDER
digital VOICE RECORDER data sheet
voice recorder chip
Voice Record
voice recorder circuit
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BS4293
Abstract: 110v double POLE MCB MK sentry Automatic 230V POWER SUPPLY ON CIRCUITS 6032s BS 4293 ac power control applications 400v 16a BSEN61008 SS14 sentry
Text: TECHNICAL DATA SHEET Sentry Residual Current Devices RCDs 1:5 Sentry RCDs Description PRODUCT RANGE Rating Tripping current List No. Double pole, 2 module 16A, 110V 10mA 6016s 16A, 110V 30mA 6416s 16A, 230V 10mA 6316s 16A, 230V 30mA 5716s 32A, 110V 30mA
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6016s
6416s
6316s
5716s
6032s
6730s
5740s
5760s
100mA
6160s
BS4293
110v double POLE MCB
MK sentry
Automatic 230V POWER SUPPLY ON CIRCUITS
6032s
BS 4293
ac power control applications 400v 16a
BSEN61008
SS14
sentry
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wiring diagram of rccb
Abstract: rcbo circuit diagram mcb circuit diagram ASN100 A16UE type b mcb mcb tripping curves mem RCBO Circuit Breakers to BS EN 60898 AA633
Text: PROTECTIVE DEVICES & ACCESSORIES MEMERA A comprehensive range of protective devices and accessories to complement both the Memera 2000 and Memera 2000 AD consumer unit range. 250 Ancillary devices Contactors and impulse relays 253-254 253 Enclosures 255 HRC fuse modules
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ALB061
25mm2;
wiring diagram of rccb
rcbo circuit diagram
mcb circuit diagram
ASN100
A16UE
type b mcb
mcb tripping curves
mem RCBO
Circuit Breakers to BS EN 60898
AA633
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DDR2 routing Tree
Abstract: SODIMM ddr2 micron resistor raw card DDR2 SODIMM raw card b RCD Components PC2-3200 PC2-6400 RCD module
Text: TN-47-17: DDR2 SODIMM Optimized Address/Command Nets Introduction Technical Note DDR2 SODIMM Optimized Address/Command Nets Introduction DDR2 small-outline dual in-line memory modules SODIMMs have several basic module configurations and a number of complex topologies. Operating speeds range from
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TN-47-17:
PC2-3200
PC2-6400
x16-based
09005aef8194aff8/Source:
09005aef8194b02a
TN4717
DDR2 routing Tree
SODIMM ddr2
micron resistor
raw card
DDR2 SODIMM
raw card b
RCD Components
RCD module
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C175
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER SC: 1 REV. SSB-PG641 6SIW PRELIMINARY IN P / N \D |\ rCD o r\ <r> Cl n \0 CD 6 5 .0 0 O CD 1.0 0 [2 ,5 5 9 1 1 [ 0 .0 3 9 ] ELEC TRO -O P TIC AL CHARACTERISTICS TA = 2 5 X PER MODULE lf = 20 mA PARAMETER TEST COND MIN 636
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SSB-PG6416SIW
C175
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C175
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT SC: 1 PART NUMBER REV. SSB-PG6416UPGW PRELIMINARY IN P / N \D |\ rCD o r\ <r> Cl n \0 CD 6 5 .0 0 O CD 1.0 0 [2 ,5 5 9 1 1 [ 0 .0 3 9 ] ELEC TRO -O P TIC AL CHARACTERISTICS TA = 2 5 T PER MODULE lf = 20 mA PARAMET[R TEST COND MIN 562
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SSB-PG6416UPGW
562nm
50LDERINC
C175
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C175
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT SC: 1 PART NUMBER REV. S S B - P G 6 4 1 6 USBW PRELIMINARY IN P / N DIR CAUTION: STATIC SENSITIVE DEVICE FOLLOW PRO PER E.5.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. \D |\ rCD o r\ <r> Cl n \0 CD 6 5 .0 0 O CD 1 .0 0 [2 ,5 5 9 1 1
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SSB-PG6416USBW
470nm
50LDERINC
C175
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MT4C4007JDJ
Abstract: No abstract text available
Text: ADVANCE MICRON MT9D136A X, MT18D236A X 1 MEG, 2 MEG x 36 DRAM MODULES DRAM MODULE 1 MEG, 2 MEG x 36 • TECHNOLOGY, INC. 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES • Four CAS# ECC pinout in a 72-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process
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MT9D136A
MT18D236A
72-pin,
602mW
024-cycle
72-pin
MT4C4007JDJ
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC ADVANCE |V /|C Z R O N 8 MEG SSE D X MT16D832 32, 16 MEG x 16 DRAM MODULE • 0 0 0 4 f l2 5 DRAM MODULE ^ 5 7 ■ ■ MRN _ 8 MEG x 32,16 MEG x16 FAST PAGE MODE • Industry standard pinout in a 72-pin single-in-lìne package • High-performance, CMOS silicon-gate process
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MT16D832
72-pin
240mW
048-cycle
A0-A10;
T-46-2
A0-A10
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Untitled
Abstract: No abstract text available
Text: M IC R O N 1 MEG DRAM _ _ _ MODULE W X MT9D19 9 DRAM MODULE 1 MEG x 9 d ra m FAST-PAGE-MODE MT9D19 LOW POWER, k - l— F EXTENDED Y T F N n F n R REFRESH F (MT9D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry-standard pinout in a 30-pin single-in-line
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MT9D19
MT9D19)
30-pin
200mW
512-cycle
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DM-01
Abstract: Techno RC
Text: MT2D18 1 MEG x 8 DRAM MODULE I^ IC R O N REFRESH _ Returning RAS and CAS HIGH terminates a m emory cycle and decreases chip current to a reduced standby level. A lso, the chip is preconditioned for the next cycle during the RAS HIGH time. M emory cell data is retained in its
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MT2D18
T4C4001JDJ
MT2Q18
DM-01
Techno RC
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mt4c16m1
Abstract: No abstract text available
Text: ADVANCE I^ IIC R O N 16 MEG X MT8D168 8 DRAM MODULE 16 MEG X 8 DRAM DRAM MODULE FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply
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MT8D168
30-pin
600mW
096-cycle
A0-A10;
MT80168
A0-A11
mt4c16m1
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON I 4 MEG TECHNOIOSV. INC. SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, OPTIONAL EXTENDED REFRESH, FAST PAGE OR EDO PAGE MODE PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual-in-line memory module (DIMM)
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MT8LDT432H
72-pin,
440mW
048-cycle
128ms
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON MT9D436 X, MT18D836 X 4 MEG, 8 MEG x 36 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x 36 • TECHNOLOGY, NC. 16, 32 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES PIN ASSIGNMENT Front View • Four CAS# ECC pinout in a 72-pin, single-in-line memory module (SIMM)
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MT9D436
MT18D836
72-pin,
359mW
048-cycle
72-Pin
MT9D436,
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