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    RD100HHF Search Results

    RD100HHF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD100HHF1 Mitsubishi MOS FET type transistor specifically designed for HF High power amplifiers applications. Original PDF

    RD100HHF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pO115

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original
    RD100HHF1 30MHz RD100HHF1 30MHz RD100HHF1-101 pO115 PDF

    RD100HHF1

    Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original
    RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w PDF

    RD 15 hf mitsubishi

    Abstract: RD100HHF1 RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original
    RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 RD 15 hf mitsubishi RD100HHF1-101 MITSUBISHI RF POWER MOS FET rd 100 100w RD100HHF1 rd100hhf hf power transistor mosfet hf amplifier 100w Mitsubishi transistor rf final RD100HH PDF

    pO115

    Abstract: rd100hhf1-101 transistor zg 100w RD100HHF1 RD 15 hf mitsubishi RD100HHF1 mitsubishi 100w
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original
    RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 pO115 rd100hhf1-101 transistor zg 100w RD100HHF1 RD 15 hf mitsubishi mitsubishi 100w PDF

    RD100HHF1

    Abstract: RD100HHF1-101 hf amplifier 100w 10Turns mosfet HF amplifier transistor hf TRANSISTOR D 1765 68 0154 RD100HH RD 15 hf mitsubishi
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original
    RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 RD100HHF1-101 hf amplifier 100w 10Turns mosfet HF amplifier transistor hf TRANSISTOR D 1765 68 0154 RD100HH RD 15 hf mitsubishi PDF

    100w amplifier RD100HHF1

    Abstract: rd100hHf1 100w RD100HHF1 RD100HHF1-101 RD100HH hf amplifier 100w
    Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original
    RD100HHF1 30MHz RD100HHF1 RD100HHF1-101 Oct2011 100w amplifier RD100HHF1 100w RD100HHF1 RD100HH hf amplifier 100w PDF

    transistor 1765

    Abstract: rd100hhf1
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:


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    RD100HHF1 30MHz 30MHz RD100HHF1 transistor 1765 PDF

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Text: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


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    30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 PDF

    RM15TB-H

    Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
    Text: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;


    Original
    CM400HA CM600HA CM600HB CM100DY CM150DY CM200DY CM300DY CM400DY CM600DY RM15TB-H RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A PDF