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    RD10E Price and Stock

    Rochester Electronics LLC RD10E

    DIODE ZENER 9.8V 0.4W 6.5%
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    DigiKey RD10E Bulk 2,704
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    TE Connectivity DRD10E

    SWITCH ROTARY DIP BCD 0.4VA 20V
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    DigiKey DRD10E Bulk 540
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    ComSIT USA DRD10E 16
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    Rochester Electronics LLC RD10E-TB

    DIODE ZENER 10V
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    DigiKey RD10E-TB Bulk 5,413
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    Rochester Electronics LLC RD10E-NEC

    DIODE ZENER 9.8V 0.4W 6.5%
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    DigiKey RD10E-NEC Bulk 3,000
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    Rochester Electronics LLC RD10E-T4-AZ

    DIODE ZENER 10V
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    DigiKey RD10E-T4-AZ Bulk 5,413
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    RD10E Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RD10E NEC Semiconductor Selection Guide 1995 Original PDF
    RD10E NEC 500 mW DHD ZENER DIODE DO-35 Original PDF
    RD10E Shenzhen Yongerjia Electronic Zener Diode Original PDF
    RD10E Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    RD10E Unknown Cross Reference Datasheet Scan PDF
    RD10EA Shenzhen Yongerjia Electronic Zener Diode Original PDF
    RD10EB EIC Semiconductor Zener Diodes Original PDF
    RD10EB NEC DIODE ZENER SINGLE 10V 3% 500MW 2DO-35 Original PDF
    RD10EB NEC 0.5W DHD zener diode, 10V Original PDF
    RD10EB Shenzhen Yongerjia Electronic Zener Diode Original PDF
    RD10EB Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    RD10EB Continental Device India 500 mW Zener Diodes in a DO-35 Package Scan PDF
    RD10EB Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    RD10EB Unknown Cross Reference Datasheet Scan PDF
    RD10EB1 EIC Semiconductor Zener Diodes Original PDF
    RD10EB1 NEC DIODE ZENER SINGLE 10V 4% 500MW 2DO-35 Original PDF
    RD10EB1 NEC 0.5W DHD zener diode, 10V Original PDF
    RD10EB1 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    RD10EB1 Continental Device India 500 mW Zener Diodes in a DO-35 Package Scan PDF
    RD10EB1 Unknown Cross Reference Datasheet Scan PDF

    RD10E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener diode rd20e b2

    Abstract: diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E
    Text: DATA SHEET ZENER DIODES RD2.0E to RD200E 500 mW DHD ZENER DIODE DO-35 NEC Type RD2.0E to RD200E Series are planar type zener diode in the PACKAGE DIMENSIONS (in millimeters) popular DO-35 package with DHD (Double Heatsink Diode) construction φ 0.5 25 MIN.


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    PDF RD200E DO-35) RD200E DO-35 RD130E RD200E: RD39E zener diode rd20e b2 diode zener 1N 398 zener diode B3 Zener Diode B1 9 zener diode rd13e zener diode B5 RD6.2E zener diode rd39e b5 RD6.8E NEC Zener diode RD3.0E

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    zener diode ab

    Abstract: 3ES 42 Ab zener RD10ES RD11ES RD12ES RD13ES RD15ES RD39ES zener 2
    Text: TH97/10561QM RD2.0ES SERIES TW00/17276EM IATF 0060636 SGS TH07/1033 ZENER DIODES DO - 34 Glass VZ : 2.0 - 37.5Volts PD : 400 mW 1.00 25.4 min. 0.078 (2.0 )max. FEATURES : * High reliability * Low leakage current * Suitable for 5mm - pitch high speed automatical


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    PDF TH97/10561QM TW00/17276EM TH07/1033 DO-34 RD39ES RD24ES RD22ES zener diode ab 3ES 42 Ab zener RD10ES RD11ES RD12ES RD13ES RD15ES zener 2

    RD12E B1

    Abstract: rd2.4e zener rd9.1esb2
    Text: SIYU R RD_EB Series 特征 Features DO-35 Glass •反向漏电流小。 Low reverse leakage max. 0.52 ·齐纳击穿阻抗低。 low zener impedance ·最大功率耗散500mW。 maximum power dissipation of 500 mW min. 27.5 ·高稳定性和可靠性。 High stability and high reliability


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    PDF DO-35 500mW DO-35 RD12E B1 rd2.4e zener rd9.1esb2

    marking AB2

    Abstract: diode zener 1N 398 nec 2563 7es marking RD15ES RD10ES RD11ES RD12ES RD13ES RD16ES
    Text: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.


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    PDF RD39ES DO-34) RD39ES DO-34 DO-34 marking AB2 diode zener 1N 398 nec 2563 7es marking RD15ES RD10ES RD11ES RD12ES RD13ES RD16ES

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    RD11EB3

    Abstract: RD5.1EB3 rd11eb diode RD15EB3 RD9.1EB2 RD10EB2 RD4.3EB RD5.1EB zener rd5.6b zener diode rd13e
    Text: RD2.0E~RD200E ZENER DIODES Features • DHD Double Heatsink Diode Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 Glass sealed package. Applications Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.


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    PDF RD200E RD130E RD200E: DO-35 RD11EB3 RD5.1EB3 rd11eb diode RD15EB3 RD9.1EB2 RD10EB2 RD4.3EB RD5.1EB zener rd5.6b zener diode rd13e

    rd11eb diode

    Abstract: 7EB2 RD12EB3 RD6.8EB2 rd3.0eb2 RD7.5EB1 RD20E RD10EB2 RD5.1EB3 RD10EB
    Text: RD2.0E~RD200E ZENER DIODES Features • DHD Double Heatsink Diode Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 Glass sealed package. Applications • Circuits for, Constant Voltage, Constant Current Wave form clipper, Surge absorber, etc.


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    PDF RD200E RD130E RD200E: DO-35 rd11eb diode 7EB2 RD12EB3 RD6.8EB2 rd3.0eb2 RD7.5EB1 RD20E RD10EB2 RD5.1EB3 RD10EB

    zener diode RD2.2S

    Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
    Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ


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    PDF RD10UJ RD11UJ RD12UJ RD13UJ RD15UJ RD16UJ RD18UJ RD20UJ RD22UJ RD24UJ zener diode RD2.2S RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P

    Untitled

    Abstract: No abstract text available
    Text: RD2.0ES SERIES ZENER DIODES DO - 34 Glass VZ : 2.0 - 37.5Volts PD : 400 mW FEATURES : 1.00 25.4 min. 0.078 (2.0 )max. * High reliability * Low leakage current * Suitable for 5mm - pitch high speed automatical insertion * Pb / RoHS Free 0.118 (3.0) max. Cathode


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    PDF DO-34 RD39ES RD22ES RD24ES RD27ES RD30ES RD33ES RD36ES RD39ES

    rd11eb diode

    Abstract: RD7.5EB1 RD5.6EB3 RD11EB3 zener diode rd20e b2 RD20E B2 Zener RD10EB2 RD6.2EB2 RD5.1EB3
    Text: RD2.0E~RD200E ZENER DIODES Features • DHD Double Heatsink Diode Construction • Vz: Applied E24 standard (RD130E to RD200E: 10 volts step). • DO-35 Glass sealed package. Applications • Circuits for, Constant Voltage, Constant Current Wave form clipper, Surge absorber, etc.


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    PDF RD200E RD130E RD200E: DO-35 rd11eb diode RD7.5EB1 RD5.6EB3 RD11EB3 zener diode rd20e b2 RD20E B2 Zener RD10EB2 RD6.2EB2 RD5.1EB3

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    ZENER RD15E B1

    Abstract: RD10E RD11E RD120E RD12E RD13E RD15E RD39E RD2.4E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    RD9A

    Abstract: S51A RD10E RD10L RD11J RD11JS RD11S
    Text: 252- - y *i-n& m RD9. RD9. RD9. RD9. m . ÎJ US IK 1L 1M R D 9 .IP R D 9 . IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A R D I ID RD11E R D IIE S RD I IF R D llF M RD11J RDUJS RDI IK


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    PDF 40ms-C 40ms-ei RD9A S51A RD10E RD10L RD11J RD11JS RD11S

    RD9A

    Abstract: RD10E RD10L RD11J RD11JS RD11S
    Text: - 252- m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL RDI IM RDllP


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    PDF 40ms-C 40ms-ei sc-11 -28UNF-2AT i042U SC-11U 27MIN 27M1N 27MIN RD9A RD10E RD10L RD11J RD11JS RD11S

    RD9A

    Abstract: RD10E RD10L RD11J RD11JS RD11S trn 1p
    Text: - 252- y *i-n& m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL


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    PDF 40ms-C 40ms-ei i15-0 25MIN RD9A RD10E RD10L RD11J RD11JS RD11S trn 1p

    RD9A

    Abstract: RD10E RD10L RD11J RD11JS RD11S oa 1160 RD9D
    Text: - 252- y *i-n& m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL


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    PDF 40ms-C 40ms-ei 40mst RD11UJ 40nis-C BK53-3 420ft RD12E 40msTiJi RD12ES RD9A RD10E RD10L RD11J RD11JS RD11S oa 1160 RD9D

    RD9A

    Abstract: RD10E RD10L RD11J RD11JS RD11S
    Text: - 252- m RD9. ÎJ RD9. U S RD9. IK RD9. 1L m . 1M RD 9.IP RD 9.IS RD9.1UJ RD9. 1 UM RD9A RD9D RD10E R010BS RDIOF RDIOFM RDIOJ RD10 J S RD10K RD10L RD10M RD10P RD10S RD10ÜJ RD10UM RB11A RDI ID RD11E RDIIES RDI IF RDllFM RD11J RD U JS RDI IK RDI IL RDI IM RDllP


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    PDF 40ms-C 40ms-ei 40mst RD11UJ 40nis-C BK53-3 420ft RD12E 40msTiJi RD12ES RD9A RD10E RD10L RD11J RD11JS RD11S

    RD9A

    Abstract: RD9D RD10E RD10L RD11J RD11JS RD11S
    Text: 252- - y * i - n & tV ñ. m iz m £ £ p Vz [z Z z a a j: V L A ? ¡A fift ¡fe Vz <0 n Í& Í/ L Zzkm ax Ig m a x f O f # f m (m W) 400 (n A ) m in RD9. Î J a n RD9. U S a n 400 8 .5 6 RD9. IK a n 400 8. 56 typ m ax íz (m A ) (ft) I z (m A ) 5 ÍQ )


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    PDF 40ms-C 40ms-ei 40msT-à RD12F RD12FM RD12J RD12JS --18--j E1233 RD9A RD9D RD10E RD10L RD11J RD11JS RD11S

    diodos

    Abstract: R024M R082F 1S963 1SS53 RD27E 5w r010j r010j RD27F RD100E
    Text: TT* KJ Dioaes i — • Zonor D iod os DHO C o nstruction P lan ar Typo • S w itch in g D iod os V r (V) 30 50 75 30 50 75 Typo No. 1S963 1S954 1S955 1SS53 1SS54 1SS55 lo (mA) 100 200 200 100 100 100 P -0 .4 W • Tw in Diodas Typo No. 152835 152836 152837


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    PDF 1S963 1S964 1S955 1SS53 1SS54 1SS55 RD10M RD11M RD12M RD13M diodos R024M R082F RD27E 5w r010j r010j RD27F RD100E

    Zener diode 224

    Abstract: RD24E RD22E RD2.4E zener rd9.1esb2
    Text: NEC 5 0 0 m w ZENER D IO D E ELECTRON DEVICE R D 2.0E —RD 100E Outline Drawing U nit: mm NEC Type RD l“ J E Series are DHD (Double Heatsink Diode) construction planar type zener diodes possessing an allowable power dissipation of 500 m watt. T FEA TU R E S


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    PDF DO-35 RD100E Zener diode 224 RD24E RD22E RD2.4E zener rd9.1esb2

    10EB2

    Abstract: No abstract text available
    Text: DO-35Zwter Dtade* 500 mW Electrical C h aracteristics (At Ta=25°C, U n less Otherw ise Specified) Type No. rZ T ^ZT min nom (V) 'z T at l^ at max max (Ohm) Temp. Coeff. of Z 3ner Voltac e 25°C typ max (mA) (%/°C) (Ohm) rZK 'z K a* 'z k (mA) Ta max (MA)


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    PDF DO-35Zwter RD10EB1 10EB2 10EB3

    RD13M

    Abstract: RD2.4M 1SS53 zener rd9.1eb
    Text: N E C ELECTRONICS INC E Diodes S=IC D ~'r 9m •ÈÜ t>427555 O D D b l D E VR V 30 50 75 30 50 75 lo (mA) 100 200 200 100 100 100 VR(V) '30 50 30 50 I f (mA) 150 (100) 150 (100) 150 (100) 150 (100) P = 0.4W Common Anode Common Cathode Common • Zener Diodes (Mini-Mold Type)


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    PDF 1S953 1S954 1S955 1SS53 1SS54 1SS55 RD10E RD11E RD12E RD13E RD13M RD2.4M zener rd9.1eb