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    4074418H

    Abstract: No abstract text available
    Text: H D 404418 Series Description The HD404418 Series of 4-bit single-chip micro­ computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM , I/O, four timer/counters, and two


    OCR Scan     		PDF HD404418 HMCS400 HD4074418 HD4074408 27256compatib HD4074418C 4074418H

    TX2N1724

    Abstract: 2N1724 2N1722 ADE350
    Text: M IL -S -1 9 5 0 0 /2 6 2 F 19 February 196? SUPERSEDING M IL -S -1 9 5 0 0 /2 6 2 E 25 O ctober 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, N PN , SILICON, HIGH-POWER T Y PE S 2N 1722, TX2N 1722, 2N 1724, AND TX2N 1724 T h is sp e c ific a tio n i s m andatory fo r u s e by a ll D ep a r t­


    OCR Scan     		PDF MIL-S-19500/262F MIL-S-19500/262E 2N1722, TX2N1722, 2N1724, TX2N1724 1969-343-225/J16 TX2N1724 2N1724 2N1722 ADE350

    NT R03C

    Abstract: 4074418H HD4074408S RBDR wq 0233 tlr2u MARKING 4FL HD4074418F R13C HD404418F
    Text: H D 404418 Series Description The HD404418 Series of 4-bit single-chip micro­ computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM , I/O, four timer/counters, and two


    OCR Scan     		PDF HD404418 HMCS400 HD4074418 HD4074408 27256-compatible. NT R03C 4074418H HD4074408S RBDR wq 0233 tlr2u MARKING 4FL HD4074418F R13C HD404418F

    TIP-52

    Abstract: tip51 tip54 TIP52
    Text: TEXAS INSTR -C0PT03- Ô 961726 i. ' t * TEXAS bE IN S T R DE B ô T t i l T B h □□3bfl3D 62C 3 6 8 3 0 O P T O TIP51, TIP52, TIP53, TIP54 N-P-N SILICON POWER TRANSISTORS T - *• R E V IS E D O C T O B E R 1 9 8 4 • 1 0 0 W at 2 5 ° C Case Tem perature


    OCR Scan     		PDF -C0PT03- TIP51, TIP52, TIP53, TIP54 TIP-52 tip51 TIP52

    KM428C257

    Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
    Text: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual


    OCR Scan     		PDF KM428C257 256KX 512x8 110ns 130ns 150ns 110mA 100mA 40-PIN 40/44-PIN KM428C257 XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung

    BB-2225-X

    Abstract: No abstract text available
    Text: I DRWG. NO. ±.015 OUST. DRWG. 196 . T -f^ 'T_' i i I I , i i i 1 L 4— PART NO. A A- 2 2 2 2 AA-2222-X A A -2 2 2 3 AA-2223-X B B- 22 24 BB-2224-X BB-2225 BB-2225-X AWG 22- 18 22- 18 22- 18 22- 18 16- 14 16- 14 16- 14 16- 14 COLOR MWID TAB S I Z E . 176/4.47


    OCR Scan     		PDF AA-2222 AA-2222-X AA-2223 AA-2223-X BB-2224 BB-2224-X BB-2225 BB-2225-X I87xn020?

    TRANSISTOR BDX 286

    Abstract: 2N3439 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525
    Text: TYPES 2N3439, 2N3440 N-P-N SILICON POWER TRANSISTORS H IGH-VO LTAGE POWER TRA N SISTO RS DESIGN ED FO R IN D U STRIA L AND M ILIT A R Y APPLICATIONS • Min V B R CEO ° f 350 V (2N3439) • Max VcE(sat) ° f 0-5 V at lc = 50 mA • Min f j of 15 MHz at 10 V , 20 mA


    OCR Scan     		PDF 2N3439, 2N3440 2N3439) 2N3439 TRANSISTOR BDX 286 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525

    CY7C199-25PC

    Abstract: 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CY7C199 CE12U
    Text: St •ss CY7C199 CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tj>oE T he CY7C199 is a high-perform ance CM OS static RAM organized as 32,768 words by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C199 CY7C199 300-mil-wide 00239-B CY7C199-25PC 2218 8 PIN DIP C19S 7C199-15 7C199-20 7C199-25 CE12U

    BB-239-08X

    Abstract: I90700 BB-237-06X BB-2I8-38X
    Text: 10 19070 VIATERIAL NO. LOOSE PIECE I90 7 0 0 0 5 4 I90 7 0 0 0 5 7 I90 7 0 0 0 5 9 I9 0 7 0 0 0 6 3 B B -2 I8 -I0 X B B-2 I8 -I4 X B B - 2 I8 - 3 8 X B B - 2 I8 - 5 G X I9 0 7 0 0 0 6 5 I9 0 7 0 0 0 6 7 I9 0 7 0 0 0 6 9 I9 0 7 0 0 0 7 I I90 7 0 0 0 7 3 I90 7 0 0 0 7 5


    OCR Scan     		PDF I90700054 I90700057 I90700058 I90700059 BB-2I8-38X I9070006 BB-2I8-56XT^ I90700063 I90700064 BB-2I8-38XT^ BB-239-08X I90700 BB-237-06X

    Untitled

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R - B R O W N « SHC605 1 I DEMO BOARD AVAILABLE See Appendix A • LOW ACQUISITION TIME: 30ns to 0.01% • LOW DROOP RATE: 8mV/|as max T MIN to T max • LOW POWER CONSUMPTION: 335mW • EXTREMELY VERSATILE ARCHITECTURE:


    OCR Scan     		PDF SHC605 335mW 16-Lead 17313b5 G032DS1 0Q32052

    Untitled

    Abstract: No abstract text available
    Text: W g * CYPRESS 32K x 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply T he CY7C1399 is a high-perform ance 3.3V CM O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory ex­ pansion is provided by an active LO W chip


    OCR Scan     		PDF CY7C1399 CY7C1399

    3055 5C pnp transistor

    Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
    Text: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •


    OCR Scan     		PDF TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 25-mJ TIP110 TIP111 3055 5C pnp transistor tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055

    MCM4132L20

    Abstract: pir 325 MCM4116 MCM4132L15 MCM4132L25 MCM4132L30
    Text: - r ? M O TO R O LA MCM4132 3 2 ,7 6 8 x 1 BIT D Y N A M IC R AM MOS T h e M C M 4 1 3 2 is a 3 2 ,7 6 8 -b it h ig h -s p e e d D y n a m ic R a n d o m A c c e s s M e m o ry d e s ig n e d fo r h ig h -p e rfo r m a n c e , lo w - c o s t a p p lic a tio n s in m a in ­


    OCR Scan     		PDF MCM4132 MCM4132 768-bit MCM4116 384-bit 18-pin MCM4132L20 pir 325 MCM4132L15 MCM4132L25 MCM4132L30

    c2689

    Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
    Text: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n


    OCR Scan     		PDF MIL-S-19500/447 2N5926 TX2N5926 0D13flS7 MiL-S-l9500/447 5961-A340 c2689 Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx TX2N5926 transistor AS 431 tx transistor

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /IPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    OCR Scan     		PDF /IPD4502161 PD4502161 152-bit 50-pin S50G5-80-7JF3 PD4502161 PD4502161. PD4502161G5-7JF:

    D1186

    Abstract: MB89251 REM BB2
    Text: MB86940 FUJITSU 930 Series Companion Chip DATASHEET FEA TU RES AUGUST 1994 _ • Integrated Interrupt Request Controller, Timer, and Serial D ata Transmitter/Receiver • 930 Series processor interface • 40 MHz operation


    OCR Scan     		PDF MB86940 MB86940 PGA-135P-M01) MB86940CPR-G FPT-144P-M03) MB86940CPFV-G-BND D1186 MB89251 REM BB2

    mpd416c

    Abstract: UPD416 PD416D oq 0051 nec D416 PD416-5 MPD416D
    Text: jjpù4i y piPD416-1 /¿PD416-2 fiPD416-3 ^PD416-5 NEC Electronics U.S.A. Inc. Microcomputer Division 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY DESCRIPTION T h e N E C /uPD41 6 is a 16384 w ords by 1 b it D y n a m ic M O S R A M . It is designed fo r


    OCR Scan     		PDF piPD416-1 uPD416-2 uPD416-3 uPD416-5 /uPD41 1PD416 MPD416D PD416 PD416D mpd416c UPD416 oq 0051 nec D416 PD416-5

    P3055E

    Abstract: motorola p3055e p23p06 2N3804 9439 2n P3055EL zener 1n 4148 1N4148H av dc tec ne 5231B diode
    Text: B EN C H M AR Q _ Using the bq2005 to Control Fast Charge Introduction T his application note describes th e use a n d functions of th e bq2005 con tro llin g a c u rre n t source to fa st ch arg e N iC d o r N iM H b a tte rie s. T h e bq2005 m ay also se rv e a s


    OCR Scan     		PDF bq2005 bq2005 197-103LA6-A01 C100Y103J P3055E motorola p3055e p23p06 2N3804 9439 2n P3055EL zener 1n 4148 1N4148H av dc tec ne 5231B diode

    B-237-08XT

    Abstract: 220-04XT B-237-08X
    Text: 10 \ 9 LOOSE PIEC E F MATERIA L NUMBER I90 7 0 0 0 0 5 ALTERNATE NUMBER AA-220-02X AA-220-04X AA-220-06X A A -2 2 I-06X I90 7 0 0 0 I3 AA-22I-08X I 9 0 7 0 0 0 I 5 A A -2 2 I-IOX I9 0 7 0 0 0 I9 AA -22I-209X I 9 0 7 0 0 0 2 I A A - 2 2 2 - IO X I 9 0 7 0 0 0 2 3 A A - 2 2 2 - I4X


    OCR Scan     		PDF I90700022 I90700027 I90700032 I90700037 I90700035 I90700039 I90700042 I90700045 I90700052 I90700002 B-237-08XT 220-04XT B-237-08X

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT JuPD4502161 2M-bit Synchronous DRAM Description The ¿¡PD4502161 is a high-speed 2,097,152-bit synchronous dynam ic random -access memory, organized as 65,536 x 16 x 2 word x bit x bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.


    OCR Scan     		PDF uPD4502161 PD4502161 152-bit 50-pin S50G5-80-7JF3 PD4502161 PD4502161. PD4502161G5-7JF:

    a1s smd

    Abstract: SMD A1S
    Text: CYM1832 if CYPRESS 64K x 32 Static RAM Module Features F unctional D escription • High-density 2-Mbit SRAM module • High-speed CMOS SRAMs — Access time o f 25 ns • Low active power — 5.4W max. • SMD technology • TTL-compatible inputs and outputs


    OCR Scan     		PDF CYM1832 CYM1832 64Kx4 CYM1832PZâ 60-Pin CYM1832PZ-35C a1s smd SMD A1S

    HO-12C-14.31818MHZ

    Abstract: No abstract text available
    Text: TCD5340C GENERAL TCD5340C is a fram e interline CCD area image sensor developed fo r a 3-CCD color camera NTSC TV system . This device has signal pixels o f 1163 (horizontal) x 492 (vertical), and its image size agrees w ith 2 / 3 inch type optical system.


    OCR Scan     		PDF TCD5340C TCD5340C QQ213A7 QD513fifl HO-12C-14.31818MHZ

    ISD 1720

    Abstract: CYM1720
    Text: CYM1720 p / CYPRESS Features • High-density 768-kilobit SRAM module • High-speed CMOS SRAMs — Access time of 15 ns • 56-pin, 0.5-inch-high ZIP package • Low active power — 1.8W max. for t\A = 25 ns • SMD technology • TTL-compatible inputs and outputs


    OCR Scan     		PDF CYM1720 768-kilobit 56-pin, CYM1720 CYM1720PZâ 56-Pin ISD 1720

    737R

    Abstract: ilpi 127 P243I i1017 IDT71589 IDT71B74 IDT74FCT16373 pin diagram intel i3 processor 7mb6091sxxk IDT7MB6091
    Text: PRELIMINARY IDT7MB6091 128KB SECONDARY CACHE MODULE FOR THE INTEL i486™ Integrated Device Technology» Inc. FEATURES: DESCRIPTION: • Pin com patible w ith ttie Intel 485Turbocache™ 82485M B The IDT7M B6091 is a pin com patible re placem ent fo r the


    OCR Scan     		PDF 128KB IDT7MB6091 485Turbocacheâ 82485MB i486-based 485Turbocache IDT71589 IDT71B74 33MHz 737R ilpi 127 P243I i1017 IDT74FCT16373 pin diagram intel i3 processor 7mb6091sxxk IDT7MB6091