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    RESISTANCES AND CAPACITANCES Search Results

    RESISTANCES AND CAPACITANCES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    RESISTANCES AND CAPACITANCES Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RESISTANCES AND CAPACITANCES ROHM STANDARD SERIES OF VALUES IN A DECADE FOR RESISTANCES AND CAPACITANCES Original PDF

    RESISTANCES AND CAPACITANCES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RESISTANCES AND CAPACITANCES

    Abstract: Resistance Values UniOhm RESISTANCES
    Text: Standard Resistance Values Uniohm Corporation Standard Resistance Values For resistances and capacitances According to IEC publication 63 1


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    Standard Resistance Values In a Decade

    Abstract: e-192 E96-E48 E192
    Text: HITANO ENTERPRISE CORP. STANDARD RESISTANCE VALUES IN A DECADE for resistances and capacitances According to IEC publication 63 E192 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123 124 126 127 129 130 132 133 135 137 138 140 142 143


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    E-192

    Abstract: E192
    Text: STANDARD SERIES OF VALUES IN A DECADE FOR RESISTANCES AND CAPACITANCES According to “IEC publication 63”. E192 E96 E48 E192 E96 E48 E192 E96 E48 E192 E96 E48 E24 E12 E6 E3 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123 124 126


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    422 164

    Abstract: 453 348 E192
    Text: STANDARD SERIES OF VALUES IN A DECADE FOR RESISTANCES AND CAPACITANCES In accordance with “IEC publication 60063”. E192 E96 E48 E192 E96 E48 E192 E96 E48 E192 E96 E48 E24 E12 E6 E3 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123


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    Untitled

    Abstract: No abstract text available
    Text: E-Series Values www.vishay.com Vishay Standard Series Values in a Decade for Resistances and Capacitances E3 TO E192 E192 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121 123 124 126 127 129 130 132 133 135 137 138 140 142 143 145 147 149


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    22-Aug-12 PDF

    E192

    Abstract: IEC60063 E192 Series 60063 A 221 542 04
    Text: E-Series Values Vishay Standard Series of Values in a Decade for Resistances and Capacitances E3-E192 According to IEC 60063 E192 E96 E48 E192 E96 E48 E192 E96 E48 E192 E96 E48 E24 E12 E6 E3 100 101 102 104 105 106 107 109 110 111 113 114 115 117 118 120 121


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    E3-E192 E192 IEC60063 E192 Series 60063 A 221 542 04 PDF

    Multi-gate pHEMT Modeling for Switch Applications

    Abstract: No abstract text available
    Text: Multi-gate pHEMT Modeling for Switch Applications Ce-Jun. Wei, Hong Yin, Olesky Klimashov, Yu Zhu, and Dylan Bartle Skyworks Solutions, Inc., 20 Sylvan Road, Woburn, USA Abstract - Multi-gate pHEMTs are extensively used in pHEMT switch circuits for wireless communication


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    IGBT JUNCTION TEMPERATURE CALCULATION

    Abstract: 0642
    Text: APPLICATION NOTE Page 1 of 3 Thermal Impedance Models The thermal behavior of semiconductors can be described by two different models: Continued fraction model Tj Tcase The above shown model reflects the physical layer structure of a semiconductor – thermal capacitances with thermal resistances in


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    sine wave generator using ic 555

    Abstract: siemens relais V23162 siemens relais V23162-B0422-b110 sine wave generator technic LP03 LP05 DLP05 132051
    Text: ICs for Communications Signal Processing Subscriber Line Interface Codec Filter SLICOFI PEB 3065 High Voltage Subscriber Line IC HV-SLIC PEB 4065 Line Testing with SLICOFI/HV-SLIC Application Note 1997-07-01 DS 1 PEB 3065/PEB 4065 Revision History: Current Version: 1997-07-01


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    3065/PEB T23A230 sine wave generator using ic 555 siemens relais V23162 siemens relais V23162-B0422-b110 sine wave generator technic LP03 LP05 DLP05 132051 PDF

    weld inverter circuit diagram

    Abstract: 4433.619 CXZ49LFA cxz49ffa 3579.545 CX8045GB xtal 16mhz 8pf CXH49SFB CX5032GB CX-101F
    Text: Crystal Units Surface Mount Type CX2520SB CX-2520SB 2.5x2.0mm for Audio & Visual, Office Equipment Features RoHS Compliant Pb Free How to Order • Crystal unit for audio-visual, office equipment CX2520SB 27000 D0 P E S ZZ • Ultra-miniature and low profile (2.5x2.0x0.45mm)


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    CX2520SB CX-2520SB) CX2520SB weld inverter circuit diagram 4433.619 CXZ49LFA cxz49ffa 3579.545 CX8045GB xtal 16mhz 8pf CXH49SFB CX5032GB CX-101F PDF

    BJT 2N2222 datasheet

    Abstract: bjt 2n2222 transistor BJT 2N2222 BJT 2N2222 beta 2N2222 bjt circuits using BJT 2N2222 hmc1022 BJT 2N2222 datasheet beta circuits using BJT 2N2222 in transistor IRF7105N
    Text: AN213 SENSOR PRODUCTS APPLICATION NOTE SET/RESET FUNCTION FOR MAGNETIC SENSORS ABSTRACT Honeywell’s Anisotropic Magneto-Resistive AMR sensors are fabricated with Permalloy (NiFe) thin films that create changes in resistivity with respect to external magnetic fields. These film materials are


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    AN213 BJT 2N2222 datasheet bjt 2n2222 transistor BJT 2N2222 BJT 2N2222 beta 2N2222 bjt circuits using BJT 2N2222 hmc1022 BJT 2N2222 datasheet beta circuits using BJT 2N2222 in transistor IRF7105N PDF

    OT-33

    Abstract: 12000.000 Mhz 3579.545 CX-5FW XTAL CX 3225SB CX-5FD CX-101F CX-2520SB CX-3225SB CX-4025S
    Text: Crystal Units Surface Mount Type CX-2520SB 2.5x2.0A for Audio & Visual, Office Equipment Standard Frequencies Features • Crystal Unit for Audio-Visual, Office Equipment • Ultra-miniature and low profile. 2.5x2.0x0.45mm • Ceramic package. • A lead free product.


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    CX-2520SB OT-33 12000.000 Mhz 3579.545 CX-5FW XTAL CX 3225SB CX-5FD CX-101F CX-2520SB CX-3225SB CX-4025S PDF

    XTAL CX 3225SB

    Abstract: 3579.545 crystal 27 hc49 inductance CX-101F CX-2520SB CX-3225SB CX-4025S CX-49G CX-53F CX-8045G
    Text: Crystal Units Surface Mount Type CX-2520SB 2.5x2.0A for Audio & Visual, Office Equipment Standard Frequencies Features • Crystal Unit for Audio-Visual, Office Equipment • Ultra-miniature and low profile. 2.5x2.0x0.45mm • Ceramic package. • A lead free product.


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    CX-2520SB XTAL CX 3225SB 3579.545 crystal 27 hc49 inductance CX-101F CX-2520SB CX-3225SB CX-4025S CX-49G CX-53F CX-8045G PDF

    IN60 diode

    Abstract: IN60 diode IN60 equivalent diode for diode IN34 Hitachi DSA002788 RFS TM3
    Text: HA12188AF Pre-Amplifier and Servo IC for Quadruple-Speed CD-ROM ADE-207-183 Z 1st Edition Description The typical values of built-in capacitances in this IC are reduced 10% compared with those in IC HA12188F. The values of Electrical Characteristics of this IC are same as those of IC HA12188F.


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    HA12188AF ADE-207-183 HA12188F. FP-56 IN60 diode IN60 diode IN60 equivalent diode for diode IN34 Hitachi DSA002788 RFS TM3 PDF

    IN60 diode

    Abstract: equivalent diode for diode IN60 in60 hitec servo S60 S21 HA12188AF HA12188F Laser pickup 11t 36 Photodiode and amplifier IC for CD Hitachi DSA00480
    Text: HA12188AF Pre-Amplifier and Servo IC for Quadruple-Speed CD-ROM ADE-207-183 Z 1st. Edition October 1995 Description The typical values of built-in capacitances in this IC are reduced 10% compared with those in IC HA12188F. The values of Electrical Characteristics of this IC are same as those of IC HA12188F.


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    HA12188AF ADE-207-183 HA12188F. IN60 diode equivalent diode for diode IN60 in60 hitec servo S60 S21 HA12188AF HA12188F Laser pickup 11t 36 Photodiode and amplifier IC for CD Hitachi DSA00480 PDF

    tda4863 equivalent

    Abstract: DN-PFC-TDA4863-1 TDA4863 pfc TDA4863 TDA4863 application note MUR460 SPP20N60 equivalent tda4863 Cross References Data power mosfet SPP20N60C3
    Text: Design Note, V1.0, Mar. 2003 T D A4 8 6 3 DN-PFC-TDA4863-1 TDA4863 Driving MOSFET with large Capacitances Author: Wolfgang Frank http://www.infineon.com/pfc Power Management & Supply N e v e r s t o p t h i n k i n g . TDA4863 Driving MOSFET with large Capacitances


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    DN-PFC-TDA4863-1 TDA4863 SPP20N60C3 tda4863 equivalent DN-PFC-TDA4863-1 pfc TDA4863 TDA4863 application note MUR460 SPP20N60 equivalent tda4863 Cross References Data power mosfet PDF

    triggering scr with microprocessor

    Abstract: cmos function generator using cd4049 ic mm74hc national semiconductor CD4000 scr Power Supply Schematic Diagram MM74HC cmos scr CD4049 Application AN-339 national AN-339
    Text: INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies The latch-up mechanism once triggered turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC to ground This generally destroys the CMOS IC or at


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    MM54HC MM74HC triggering scr with microprocessor cmos function generator using cd4049 ic mm74hc national semiconductor CD4000 scr Power Supply Schematic Diagram cmos scr CD4049 Application AN-339 national AN-339 PDF

    ic mm74hc

    Abstract: triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC
    Text: Fairchild Semiconductor Application Note 339 November 1987 INTRODUCTION SCR latch-up is a parasitic phenomena that has existed in circuits fabricated using bulk silicon CMOS technologies. The latch-up mechanism, once triggered, turns on a parasitic SCR internal to CMOS circuits which essentially shorts VCC


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    MM54HC/MM74HC ic mm74hc triggering scr with microprocessor cmos scr AN-339 national MM74HC SCR TRIGGER PULSE circuit AN-339 CD4000 MM74C 74HC PDF

    HP5082-4204

    Abstract: HP-5082-4204 HP5082-4204 photodiode OPA111 hp5082 diode PDS-434 Burr-Brown instrumentation amplifier 1971 internal AB-075 4204 photo diode OPA2111
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    OPA2111 HP5082-4204 HP-5082-4204 HP5082-4204 photodiode OPA111 hp5082 diode PDS-434 Burr-Brown instrumentation amplifier 1971 internal AB-075 4204 photo diode OPA2111 PDF

    HP5082-4204

    Abstract: HP5082-4204 photodiode HP-5082-4204 PHOTODIODE current voltage amplifier array PDS-434 AB-075 OPA111 OPA128 OPA2111 OPA404
    Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132


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    89051

    Abstract: DH80102 89189 DH80052 89186
    Text: HIGH-VOLTAGE PIN AND NIP DIODES e - This series of high power, high voltage PIN and NIP diodes Incorporates passivated mesa technology. A broad range Is available, in terms of breakdown voltages, junction capacitances, and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.


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    719C1CC

    Abstract: No abstract text available
    Text: STANDARD SERIES OF VALUES IN A DECADE i ~ STANDARD SERIES OF VALUES IN A DECADE for resistances and capacitances a c c o rd in g to IE C p u b lic a tio n 6 3 Film Capacitors HOW TO INTERPRET CAPACITANCE


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    100PF. 719C1CA101PF630SF 719C1CA102PF630SF 719C1CB103PF630SG 215PF. 719C1CA2151F630SF 00215nF. 719C1CA2152F630SF 719C1CC2153F630SH 324PF. 719C1CC PDF

    RF Transistor s-parameter

    Abstract: bipolar transistor s-parameter lm 7803 s-parameter RF POWER TRANSISTOR NPN BJT with i-v characteristics transistor D 5032 bipolar transistor ghz s-parameter 60Ghz TRANSISTOR 30GHZ qubic4
    Text: IEEE BCTM 10.2 An S-parameter Technique for Substrate Resistance Characterization of RF Bipolar Transistors S.D. Harker*, R.J. Havenst , J.C.J. Paasschenst , D. Szmyd*, L.F. Tiemeijer*, and E.F. Weagel* ‘ Philips Semiconductors, 9201 Pan American Frwy. NE, Albuquerque, NM 87113, USA


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    Untitled

    Abstract: No abstract text available
    Text: 5JP-A CATHODE-RAY TUBES T h e T yp e 5JP -A C athode-ray T u b es are de­ signed for oscillographic applications w here low deflection p late capacitances are essential. T h e de­ flection plate leads are short and direct, term inat­ ing in caps on the w all of the tube rather than in


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