Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD M3355 Preliminary LINEAR INTEGRATED CIRCUIT 2-INPUT SINGLE VIDEO SWITCH TSSOP-8 DESCRIPTION The UTC M3355 is 2-input signal video switch selecting one of two video or audio signals. Its operating voltage is 4.75 ~ 13V and
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M3355
M3355
10MHz.
43MHz)
M3355L-S08-R
M3355G-S08-R
M3355L-S08-T
M3355G-S08-T
M3355L-D08-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N60 Preliminary Power MOSFET HEXFET POWER MOSFET DESCRIPTION As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is
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22N60
22N60
O-247
22N60L
22N60G
22N60-T47-T
22N60L-T47-T
QW-R502-216
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U74AHCT1G02
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD U74AHCT1G02 CMOS IC 2-INPUT NOR GATE DESCRIPTION The U74AHCT1G02 is a single 2-input NOR gate which provides the Function. FEATURES * Operation Voltage Range: 2.0~5.5V * Low Power Dissipation * High noise immunity *Balanced propagation delays
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U74AHCT1G02
U74AHCT1G02
U74AHCT1G02L-AF5-R
U74AHCT1G02L-AL5-R
U74AHCT1G02G-AF5-R
U74AHCT1G02G-AL5-R
OT-25
OT-353
QW-R502-135
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD U74HCT08 CMOS IC QUAD 2-INPUT AND GATES DESCRIPTION SOP-14 The U74HCT08 contains four independent 2-input AND gates, perform the Boolean function Y = A • B or Y = A + B in positive logic. FEATURES * Operation Voltage Range: 4.5~5.5V
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U74HCT08
U74HCT08
OP-14
TSSOP-14
U74HCT08L-S14-R
U74HCT08G-S14-R
U74HCT08L-P14-R
U74HCT08G-P14-R
OP-14
TSSOP-14
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BA3422
Abstract: 3422L
Text: UNISONIC TECHNOLOGIES CO., LTD 3422 LINEAR INTEGRATED CIRCUIT HIGH PERFORMANCE DUAL BIPOLAR OPERATINAL AMPLIFIER SOP-8 DESCRIPTION The UTC 3422 is a dual high performances operational amplifier featuring speed of 25MHz and single supply operation from 3V ~ 36V.
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25MHz
25MHz
14nV/Hz
3422L-D08-T
3422L-S08-R
3422L-S08-T
3422G-D08-T
3422G-S08-R
QW-R105-029
BA3422
3422L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD DTA123J PNP SILICON TRANSISTOR DIGITAL TRANSISTORS BUILT- IN BIAS RESISTORS 3 1 2 SOT-23 (JEDEC TO-236) FEATURES 3 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to
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DTA123J
OT-323
OT-23
O-236)
OT-523
O-92SP
OT-23
OT-323
OT-523
O-92SP
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2N3772
Abstract: 2N3772G
Text: UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications.
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2N3772
2N3772
2N3772L-T30-Y
2N3772G-T30-Y
QW-R205-002
2N3772G
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Untitled
Abstract: No abstract text available
Text: IS42/45SM/RM/VM32800K 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM32800K
32Bits
IS42/45SM/RM/VM32800K
IS42VM32800K-75BLI
90-ball
-40oC
8Mx32
IS42VM32800K-6BLA1
IS42VM32800K-75BLA1
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Untitled
Abstract: No abstract text available
Text: IS42/45SM/RM/VM16160K 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160K are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16160K
16Bits
IS42/45SM/RM/VM16160K
IS42VM16160K-75BLI
54-ball
-40oC
16Mx16
IS42VM16160K-6BLA1
IS42VM16160K-75BLA1
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2sd1802L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1802 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. FEATURES * Adoption of FBET, MBIT processes
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2SD1802
2SD1802
O-251
O-252
2SD1802L-x-TM3-T
2SD1802G-x-TM3-T
2SD1802L-x-TN3-T
2SD1802G-x-TN3-T
2SD1802L-x-TN3-R
2sd1802L
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IS46R32800B
Abstract: 46R32800B
Text: IS46R32800B 8Mx32 256Mb DDR Synchronous DRAM FEATURES • Vdd/Vddq=2.5V+0.2V -6, -75 • Double data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)
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IS46R32800B
8Mx32
256Mb
IS46R32800B
46R32800B
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Untitled
Abstract: No abstract text available
Text: IS42VM16200C Advanced Information 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42VM16200C
16Bits
IS42VM16200C
-25oC
2Mx16
IS42VM16200C-6BLE
54-ball
IS42VM16200C-75BLE
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SM16200C
Abstract: No abstract text available
Text: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42SM16200C
IS42RM16200C
IS42VM16200C
16Bits
IS42SM/RM/VM16200C
-40oC
2Mx16
IS42VM16200C-6BLI
IS42VM16200C-75BLI
54-ball
SM16200C
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s 8001 sdram
Abstract: No abstract text available
Text: IS42VM32100C Advanced Information 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are
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IS42VM32100C
32Bits
IS42VM32100C
-25oC
1Mx32
IS42VM32100C-6BLE
90-ball
IS42VM32100C-75BLE
s 8001 sdram
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Untitled
Abstract: No abstract text available
Text: TE www.vishay.com Vishay Sprague Aluminum Capacitors Little-Lytic Electrolytics FEATURES DESCRIPTION VALUE Operating temperature Tolerance on CR Ripple current Life validation test 2000 h at + 85 °C - 40 °C to + 105 °C G = + 75 %, - 10 % and F = + 50 %, - 10 %
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SM32100C
Abstract: VM321 IS42SM32100C
Text: IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42SM32100C
IS42RM32100C
IS42VM32100C
32Bits
IS42SM/RM/VM32100C
-40oC
1Mx32
IS42VM32100C-6BLI
IS42VM32100C-75BLI
90-ball
SM32100C
VM321
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2MX16X4
Abstract: IS42S32400AL
Text: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves
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IS42S81600AL,
IS42LS81600AL
IS42S16800AL,
IS42LS16800AL
IS42S32400AL,
IS42LS32400AL
16Meg
128-MBIT
128Mb
2MX16X4
IS42S32400AL
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SM16160E
Abstract: IS42RM16160E
Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16160E
16Bits
IS42/45SM/RM/VM16160E
-40oC
16Mx16
IS42SM16160E-6BLI
IS42SM16160E-75BLI
54-ball
SM16160E
IS42RM16160E
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CL500
Abstract: service manual bosch IC BOSCH 44 5348B cl300 bosch bosch CL500 IC BOSCH CL350 CL500 bosch bosch k line
Text: IBS BA DSC/I-T Controller Board for Bosch PLCs Data Sheet 5348B 10/2001 Product Description INTERBUS Generation 4 controller board for Bosch CL300A, CL350, CL400/401, and CL500/501-PLCs. Features – INTERBUS protocol EN 50254 – Complete Generation 4 functionality
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5348B
CL300A,
CL350,
CL400/401,
CL500/501-PLCs.
and27
Contact10/2001
TNR93
CL500
service manual bosch
IC BOSCH 44
5348B
cl300 bosch
bosch CL500
IC BOSCH
CL350
CL500 bosch
bosch k line
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IS42RM16160E
Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16160E
16Bits
IS42/45SM/RM/VM16160E
-40oC
16Mx16
IS42SM16160E-6BLI
IS42SM16160E-75BLI
54-ball
IS42RM16160E
IS42VM16160E-75BLI
IS42VM16160E
is42vm16160
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SM32800E
Abstract: IS42RM32800E
Text: IS42/45SM/RM/VM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM32800E
32Bits
IS42/45SM/RM/VM32800E
IS42SM32800E-75BLI
90-ball
-40oC
8Mx32
IS42RM32800E-6BLI
IS42RM32800E-75BLI
SM32800E
IS42RM32800E
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IS42VM32800E
Abstract: IS42VM32800E-75BLI IS42SM32800E-75BLI IS42RM32800E
Text: IS42/45SM/RM/VM32800E Preliminary Information 2M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM32800E
32Bits
IS42/45SM/RM/VM32800E
90-ball
-40oC
8Mx32
IS42RM32800E-6BLI
IS42RM32800E-75BLI
IS42VM32800E
IS42VM32800E-75BLI
IS42SM32800E-75BLI
IS42RM32800E
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SM16800G
Abstract: IS42SM16800G-75BI IS42VM16800G-75BI IS42SM16800G IS42VM16800G-75BL IS42SM16800G-75BLI IS42RM16800G
Text: IS42/45SM/RM/VM16800G 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs
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IS42/45SM/RM/VM16800G
16Bits
IS42/45SM/RM/VM16800G
IS42SM16800G-6BLI
IS42SM16800G-75BLI
IS42SM16800G-75BI
54-ball
-40oC
SM16800G
IS42VM16800G-75BI
IS42SM16800G
IS42VM16800G-75BL
IS42RM16800G
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038329
Abstract: No abstract text available
Text: IBM038329PQ6 IBM038329NQ6 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos itive edge ot system clock. Single 3.3V + 0.3 100-pin LQFP 0.65mm lead pitch • Internal pipelined operation; column address can be changed every clock cycle.
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IBM038329PQ6
IBM038329NQ6
10OMhz
cycles/16ms
cycles/128ms
038329
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