Untitled
Abstract: No abstract text available
Text: XX1002-QH Active Doubler 2.5 - 6.0 / 5.0 - 12.0 GHz Rev. V4 Functional Block Diagram Features • Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing
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XX1002-QH
24-lead
XX1002-QH
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MAAM-008863-TR3000
Abstract: MAAM-008863 EPM705
Text: MAAM-008863 FTTx RF Amplifier 50 - 1000 MHz Rev. V3 Features The MAAM-008863 is fabricated using M/A-COM Technology Solutions’ low noise GaAs pHEMT technology in a lead-free 4 mm 24-lead package. The amplifier requires a minimal number of off-chip components resulting in a highly integrated low cost
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MAAM-008863
PQFN-24LD
MAAM-008863
MAAM-008863-TR3000
EPM705
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MAAM-008863
Abstract: PQFN-24 EPM705 EPM-745 M513 MABA-009210-CT1760 power amplifier 5 ghz
Text: MAAM-008863 FTTx RF Amplifier 50 - 1000 MHz Rev. V2 Features The MAAM-008863 is fabricated using M/A-COM Technology Solutions’ low noise GaAs pHEMT technology in a lead-free 4 mm 24-lead package. The amplifier requires a minimal number of off-chip components resulting in a highly integrated low cost
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MAAM-008863
MAAM-008863
24-lead
PQFN-24
EPM705
EPM-745
M513
MABA-009210-CT1760
power amplifier 5 ghz
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rf 4 mm PQFN
Abstract: M513 MASWSS0118 MASWSS0118SMB MASWSS0118TR MASWSS0118TR-3000 PQFN
Text: GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Features GND V4 39 pF Pin 16 GND Low Voltage Operation: 2.5 V Low Harmonics: < -65 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.65 dB at 1 GHz High Isolation: 23 dB at 2 GHz 4 mm 16-Lead PQFN Package 0.5 micron GaAs PHEMT Process
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16-Lead
MASWSS0118
rf 4 mm PQFN
M513
MASWSS0118
MASWSS0118SMB
MASWSS0118TR
MASWSS0118TR-3000
PQFN
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Untitled
Abstract: No abstract text available
Text: MAOC-011027 Voltage Controlled Oscillator 13.4 - 14.4 GHz Features • Rev. V2 Block Diagram Low Phase Noise Wide Tuning Range Divide-by-Two Output Integrated Buffer Amplifier Excellent Temperature Stability +5 V Bias Lead-Free 5 mm 32-Lead PQFN Package
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MAOC-011027
32-Lead
MAOC-011027
Th844
S2083
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GE dc blocking capacitors
Abstract: M513 MASWSS0118 MASWSS0118SMB MASWSS0118TR MASWSS0118TR-3000
Text: MASWSS0118 GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Features GND V4 Pin 16 39 pF Low Voltage Operation: 2.5 V Low Harmonics: < -65 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.65 dB at 1 GHz High Isolation: 23 dB at 2 GHz 4 mm 16-Lead PQFN Package 0.5 micron GaAs PHEMT Process
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MASWSS0118
16-Lead
GE dc blocking capacitors
M513
MASWSS0118
MASWSS0118SMB
MASWSS0118TR
MASWSS0118TR-3000
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SAC305
Abstract: 24 leads qfn 5x5 "thermal via" PQFN-24 rf 4 mm PQFN PQFN 8 leads PQFN SAC-305 AN3778 QFN PACKAGE Junction to PCB thermal resistance
Text: Freescale Semiconductor Application Note AN3778 Rev. 0, 2/2010 PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation By: Quan Li, Lu Li, Richard Rowan, and Mahesh Shah PURPOSE This document provides guidelines for printed circuit board
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AN3778
SAC305
24 leads qfn 5x5
"thermal via"
PQFN-24
rf 4 mm PQFN
PQFN 8 leads
PQFN
SAC-305
AN3778
QFN PACKAGE Junction to PCB thermal resistance
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M513
Abstract: S2083
Text: MAOC-009260-PKG003 Voltage Controlled Oscillator 6.1 – 7.0 GHz Rev. V1 Features • • • • • • • • • Low Phase Noise Wide Tuning Range Divide-by-Two Output Integrated Buffer Amplifier Excellent Temperature Stability +5V Bias Supply Lead-Free 5 mm 32-Lead PQFN Package
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MAOC-009260-PKG003
32-Lead
MAOC-009260
M513
S2083
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M513
Abstract: SW-489 SW-489SMB SW-489TR 65RD
Text: GaAs SP3T 2.5 V High Power Switch DC - 2.5 GHz Features GND 100 pF PIN 12 ANT Functional Schematic Low Voltage Operation: 2.5 V Low Harmonics: -74 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.5 dB at 1 GHz High Isolation: 18.5 dB at 2 GHz 3 mm 12-Lead PQFN Package
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12-Lead
SW-489
SW-489
M513
SW-489SMB
SW-489TR
65RD
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M513
Abstract: MASW-008153 MASW-008153-001SMB MASW-008153-TR3000 c5v2
Text: MASW-008153 SPDT High Isolation CATV Switch 5 – 1000 MHz Features • • • • • • • • Rev. V2 Functional Schematic 75 Ω Impedance Input Terminated Positive Voltage Control High Isolation: 65 dB at 870 MHz 0.5 micron GaAs PHEMT Process Lead-Free 4 mm 20-Lead PQFN Package
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MASW-008153
20-Lead
MASW-008153
M513
MASW-008153-001SMB
MASW-008153-TR3000
c5v2
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SW-489TR
Abstract: SW-489 M513 SW-489SMB
Text: SW-489 GaAs SP3T 2.5 V High Power Switch DC - 2.5 GHz Features PIN 1 V3 Description M/A-COM’s SW-489 is a GaAs PHEMT MMIC single pole three throw SP3T high power switch in a low cost 3 mm 12-lead PQFN package. The SW-489 is ideally suited for applications where high power, low
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SW-489
12-Lead
SW-489
SW-489TR
M513
SW-489SMB
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M513
Abstract: MASWSS0103 MASWSS0103SMB MASWSS0103TR-3000
Text: MASWSS0103 SPDT High Isolation CATV Switch 5 - 1000 MHz Features • • • • • • • • • Rev. V1 Functional Schematic 75 Ohm Impedance Input Terminated Positive Voltage Control High Isolation: 65 dB at 870 MHz 0.5 micron GaAs PHEMT Process Lead-Free 4 mm 20-Lead PQFN Package
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MASWSS0103
20-Lead
MASWSS0103
M513
MASWSS0103SMB
MASWSS0103TR-3000
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MAPS-008342-PKG003
Abstract: MAPS-008342 InMarSat power S2083
Text: RoHS Compliant MAPS-008342-PKG003 Phase Shifter, 4 Bit, 1.4-2.4 GHz Rev — Preliminary Datasheet Features ♦ ♦ ♦ ♦ ♦ 4-Bit Phase Shifter 360º Coverage, LSB = 22.5º TTL Control Inputs MSAG Process 4 mm, 24 Lead PQFN Package Description The MAPS-008342-PKG003 is a bi-directional 4-bit phase
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MAPS-008342-PKG003
MAPS-008342-PKG003
MAPS-008342-SMB003
MAPS-008342
InMarSat power
S2083
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Untitled
Abstract: No abstract text available
Text: GaAs Broadband SPDT Switch DC - 6.0 GHz Features • • • • • • • MASWSS0070 V3 Functional Schematic 802.11a + b/g Dual Band Applications Broadband Performance: DC - 6.0 GHz Low Insertion Loss: 0.75 dB @ 5.8 GHz High Isolation: 22 dB @ 5.8 GHz Low Cost 3 mm 12-Lead PQFN Package
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12-Lead
MASWSS0070
11b/g
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M513
Abstract: MASWSS0039 MASWSS0175 MASWSS0175SMB MASWSS0175TR-3000
Text: RoHS Compliant GaAs DPDT Diversity Switch 4.5 - 6.0 GHz Features N/C Low Insertion Loss: 0.8 dB at 5.2 GHz Ideal for WLAN IEEE 802.11a 0.5 micron GaAs PHEMT Process Integrated DC Blocking Capacitors Lead-Free 3 mm 12-Lead PQFN Package 100% Matte Tin Plating over Copper
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12-Lead
MASWSS0039
MASWSS0175
MASWSS0175
M513
MASWSS0039
MASWSS0175SMB
MASWSS0175TR-3000
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M513
Abstract: MASWSS0039 MASWSS0039SMB MASWSS0039TR MASWSS0039TR-3000 rf 4 mm PQFN
Text: GaAs DPDT Diversity Switch 4.5 - 6.0 GHz Features M/A-COM’s MASWSS0039 is a GaAs PHEMT MMIC DPDT diversity switch in a low cost 3 mm 12lead PQFN package. It is designed for low insertion loss and allows for independent control and selection of each switch path. It integrates blocking
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12-Lead
MASWSS0039
MASWSS0039
M513
MASWSS0039SMB
MASWSS0039TR
MASWSS0039TR-3000
rf 4 mm PQFN
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M513
Abstract: MASWSS0070 MASWSS0070SMB MASWSS0070TR MASWSS0070TR-3000
Text: GaAs Broadband SPDT Switch DC - 6.0 GHz Features • • • • • • • MASWSS0070 V3 Functional Schematic 802.11a + b/g Dual Band Applications Broadband Performance: DC - 6.0 GHz Low Insertion Loss: 0.75 dB @ 5.8 GHz High Isolation: 22 dB @ 5.8 GHz Low Cost 3 mm 12-Lead PQFN Package
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MASWSS0070
12-Lead
MASWSS0070
11b/g
M513
MASWSS0070SMB
MASWSS0070TR
MASWSS0070TR-3000
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M513
Abstract: MASWSS0060 MASWSS0060SMB MASWSS0060TR MASWSS0060TR-3000
Text: MASWSS0060 GaAs SP3T 2.7 V CDMA-GPS Switch DC - 2.5 GHz GND ANT Pin 12 GND Balanced symmetrical RF Ports Low Cross Modulation Low Insertion Loss: 0.55 dB at 1 GHz High Isolation: 21 dB at 2 GHz Miniature Package: 3 mm 12-Lead PQFN 0.5 micron GaAs PHEMT Process
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MASWSS0060
12-Lead
M513
MASWSS0060
MASWSS0060SMB
MASWSS0060TR
MASWSS0060TR-3000
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M513
Abstract: MASWSS0060 MASWSS0060SMB MASWSS0060TR MASWSS0060TR-3000
Text: GaAs SP3T 2.7 V CDMA-GPS Switch DC - 2.5 GHz GND Pin 12 100 pF Balanced symmetrical RF Ports Low Cross Modulation Low Insertion Loss: 0.55 dB at 1 GHz High Isolation: 21 dB at 2 GHz Miniature Package: 3 mm 12-Lead PQFN 0.5 micron GaAs PHEMT Process ANT •
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12-Lead
MASWSS0060
M513
MASWSS0060
MASWSS0060SMB
MASWSS0060TR
MASWSS0060TR-3000
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M513
Abstract: MASWSS0039 MASWSS0175 MASWSS0175SMB MASWSS0175TR-3000
Text: MASWSS0175 GaAs DPDT Diversity Switch 4.5 - 6.0 GHz Features N/C Low Insertion Loss: 0.8 dB at 5.2 GHz Ideal for WLAN IEEE 802.11a 0.5 micron GaAs PHEMT Process Integrated DC Blocking Capacitors Lead-Free 3 mm 12-Lead PQFN Package 100% Matte Tin Plating over Copper
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MASWSS0175
12-Lead
MASWSS0039
MASWSS0175
M513
MASWSS0039
MASWSS0175SMB
MASWSS0175TR-3000
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M513
Abstract: MASWSS0167 MASWSS0167SMB MASWSS0167TR-3000
Text: RoHS Compliant 2.5 V GaAs SPDT Switch 0.5 - 3.0 GHz MASWSS0167 V2 Features • • • • • • • • Functional Schematic Low Voltage Operation: 2.5 V Low Insertion Loss: 0.3 dB at 1 GHz Isolation: 34 dB @ 2.4 GHz 0.5 micron GaAs PHEMT Process Lead-Free 1.2 x 1.5 mm 6-Lead PQFN Package
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MASWSS0167
MASWSS0167
M513
MASWSS0167SMB
MASWSS0167TR-3000
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M513
Abstract: MASWSS0144 MASWSS0144SMB MASWSS0144TR-3000 PQFN
Text: RoHS Compliant 2.7 V GaAs SP3T Switch: GSM - CDMA - GPS DC - 3.0 GHz GND Functional Schematic 39 pF Dedicated RF Ports GSM, CDMA, GPS Low Cross Modulation: -105 dBm Low Insertion Loss: 0.6 dB at 2 GHz High Isolation: 24 dB at 2 GHz Lead-Free 3 mm 12-lead PQFN Package
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12-lead
MASWSS0144
MASWSS0144
M513
MASWSS0144SMB
MASWSS0144TR-3000
PQFN
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MASWSS0065SMB
Abstract: MASWSS0065TR-3000 M513 MASWSS0065
Text: MASWSS0065 GaAs SP3T 2.6 V CDMA-GPS Switch DC - 2.5 GHz Features GND Pin 12 39 pF Unbalanced asymmetric RF Paths Low Cross Modulation Low Insertion Loss: 0.5 dB at 1.0 GHz High Isolation: 20 dB at 2.0 GHz 3 mm 12-lead PQFN Package 0.5 micron GaAs PHEMT Process
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MASWSS0065
12-lead
MASWSS0065
MASWSS0065SMB
MASWSS0065TR-3000
M513
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MAPS-008342-PKG003
Abstract: MAPS-008342 008342 AN3016 S2083 MAPS-008342-TR0500
Text: MAPS-008342-PKG003 Part Status: Preliminary Rev. A Phase Shifter, 4-Bit 1.4—2.4 GHZ M/A-COM Products RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ 4-Bit Phase Shifter 360º Coverage, LSB = 22.5º TTL Control Inputs MSAG Process 4 mm, 24 Lead PQFN Package
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MAPS-008342-PKG003
MAPS-008342-PKG003
performa44
MAPS-008342
008342
AN3016
S2083
MAPS-008342-TR0500
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