NEC 2501
Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features
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2SC4536
2SC4536
OT-89)
PU10338EJ01V0DS
NEC 2501
2SC4536-T1
ic nec 2501
2501 NEC
nec RF package SOT89
qs marking sot-89
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2SC4703-T1
Abstract: NE46234 2SC4703 2SC470-3
Text: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
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NE46234
2SC4703
2SC4703
OT-89)
dBV/75
PU10339EJ01V1DS
2SC4703-T1
2SC470-3
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ic nec 2501
Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V0DS
ic nec 2501
nec 2501
2501 NEC
2SC4703-T1
2SC470-3
nec RF package SOT89
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nec 2501
Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .
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2SC4703
2SC4703
OT-89)
PU10339EJ01V1DS
nec 2501
ic nec 2501
nec RF package SOT89
2501 NEC
2SC4703-T1
2SC470-3
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BLH*3355
Abstract: BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor
Text: BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure
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BLH3355
BLH3355)
BLH*3355
BLH3355
blh335
uhf amplifier design Transistor
NPN planar RF transistor
high power npn UHF transistor
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MRF492 MRF492A | The RF Line 70 W 60 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR (-•—.— » . . . designed for 1 2.5 volt low band VHP large-signal power amplifier
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MRF492
MRF492A
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nec 2501
Abstract: ic nec 2501 2501 NEC NESG220034
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG220034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG220034
NESG220034
NESG220034-A
M8E0904E
nec 2501
ic nec 2501
2501 NEC
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nec 2501
Abstract: NESG240034 ic nec 2501 2501 nec
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG240034 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD 34 PKG FEATURES • The device is an ideal choice for low noise, low distortion amplification.
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NESG240034
NESG240034
NESG240034-A
M8E0904E
nec 2501
ic nec 2501
2501 nec
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NTE313
Abstract: No abstract text available
Text: NTE313 Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.
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200MHz
NTE313
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M16
PU10395EJ03V0DS
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Nec K 872
Abstract: 574 nec nec 4312 nec 8681 2sc3356 1685 transistor 2SC5337 2SC5337-T1 a 1232 nec TRANSISTOR 2sc3356
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 500 MHz
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2SC5337
2SC3356
2SC5337-T1
Nec K 872
574 nec
nec 4312
nec 8681
2sc3356
1685 transistor
2SC5337
2SC5337-T1
a 1232 nec
TRANSISTOR 2sc3356
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2SC4536
Abstract: 2SC5337 2SC5337-T1 105dBuV P1093
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz
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2SC4536
2SC5337-T1
2SC4536
2SC5337
2SC5337-T1
105dBuV
P1093
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transistor T1J
Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M05-TERISTICS
PU10190EJ02V0DS
transistor T1J
transistor T1J 4pin
M05 MARKING
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NESG2101M16
Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16-T3
NESG2101M16-T3-A
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motorola j117
Abstract: j117 motorola transistor J128 transistor j117 C7L3 mrf492
Text: MOTOROLA Order this document by MRF492/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF492 Designed for 12.5 volt low band VHF large–signal power amplifier applications in commercial and industrial FM equipment.
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MRF492
MRF492
MRF492/D
MRF492/D*
motorola j117
j117 motorola
transistor J128
transistor j117
C7L3
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56590653B
Abstract: BH Rf transistor
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON
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56-590-65/3B
MRF492
56590653B
BH Rf transistor
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transistor 81 110 w 63
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •
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MRF581
transistor 81 110 w 63
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motorola AN938
Abstract: MRF567 mrf56
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line 1.5 W 870 M H z RF LOW POWER TRANSISTOR NPN SILICON RF LOW POWER TRANSISTOR N P N SILICON . . . d e s ig n e d p rim a rily fo r w id e b a n d large s ig n a l p redrive r stages in the 800 M H z fre q u en cy range.
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MRF557
motorola AN938
MRF567
mrf56
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transistor NEC D 586
Abstract: CD 1691 CB NEC D 586 Nec b 616 2SC4536 nec 0432 marking AG sot-89
Text: DATA SHEET SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic
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2SC4536
2SC4536
OT-89)
transistor NEC D 586
CD 1691 CB
NEC D 586
Nec b 616
nec 0432
marking AG sot-89
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2SC1070
Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low
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2SC1070
s parameters RF NPN POWER TRANSISTOR 100MHz
Tma UHF
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2SC2758
Abstract: No abstract text available
Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2SC2758,2SC2758R RF AM P. FOR UHF TV TUNER NPN SILICON TRANSISTOR The 2SC2758, 2SC2758R are specifically designed fo r U HF RF am p lifie r PACKAGE DIMENSIONS applications. The 2SC2758 and 2SC2758R feature high power gain, low
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2SC2758
2SC2758R
2SC2758,
2SC2758R
25x5x0
2758R
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transistor marking 7D
Abstract: MMBR931LT1
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in low-power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where power consumption is critical. RF AMPLIFIER
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MMBR931LT1
transistor marking 7D
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HP8542
Abstract: HP11590B transistor nf5 F581
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz
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F5812
MRF581
MRF5812
HP8542
HP11590B
transistor nf5
F581
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MRF557
Abstract: No abstract text available
Text: MOTOROLA • i SEMICONDUCTOR TECHNICAL DATA MRF557 The RF Line NPN Silicon RF Low Power TVansistor . . . designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W
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MRF557
MRF557
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