RF POWER TRANSISTOR NPN Search Results

RF POWER TRANSISTOR NPN Result Highlights (5)

Part	Manufacturer	Description
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

RF POWER TRANSISTOR NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NTE359 Abstract: 8-32N Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances	Original	PDF	NTE359 175MHz 175MHz 8-32-NC-3A NTE359 8-32N
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC Abstract: 2.4 ghz transmitter rf test Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR	Original	PDF	MRF16006 MRF16006 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test
NEC 2501 Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89 Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features	Original	PDF	2SC4536 2SC4536 OT-89) PU10338EJ01V0DS NEC 2501 2SC4536-T1 ic nec 2501 2501 NEC nec RF package SOT89 qs marking sot-89
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz" Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR	Original	PDF	MRF16030 MRF16030 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
TVU012 Abstract: 420 NPN Silicon RF Transistor ASI10646 Text: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.	Original	PDF	TVU012 TVU012 420 NPN Silicon RF Transistor ASI10646
TVU020 Abstract: RF Bipolar Transistor 2108-G ASI10648 Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband	Original	PDF	TVU020 TVU020 RF Bipolar Transistor 2108-G ASI10648
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	PDF	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
NTE475 Abstract: m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz Text: NTE475 Silicon NPN Transistor RF Power Output Description: The NTE475 is an NPN silicon annular RF power transistor, optimized for large–scale power–amplifier and driver applications to 300MHz. Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE475 NTE475 300MHz. 100mA, 100MHz 100kHz 175MHz m21 sot23 transistor RF NPN POWER TRANSISTOR 100MHz
BLY93a Abstract: No abstract text available Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR	Original	PDF	BLY93A 30Vdc. 175MHzl BLY93a
UPB2060 Abstract: No abstract text available Text: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed	Original	PDF	UPB2060 UPB2060 400mA 491w6
2N5643 Abstract: No abstract text available Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in	Original	PDF	2N5643 30Vdc. 2N5643
nec 2501 Abstract: ic nec 2501 NESG250134 2501 NEC Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification	Original	PDF	NESG250134 NESG250134-Tconductor nec 2501 ic nec 2501 NESG250134 2501 NEC
UPB1835 Abstract: TM35W Text: UPB1835 35W PEP, 1.8-2.0 GHz, 25V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB1835 is a high-power COMMON EMITTER bipolar transistor capable of providing 35 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed for	Original	PDF	UPB1835 UPB1835 TM35W
NTE477 Abstract: No abstract text available Text: NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe ≥ 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz	Original	PDF	NTE477 NTE477 175MHz 175MHz,

MRF262 Abstract: MRF264 MRF260 MRF261 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli cations in commercial and industrial equipment. NPN SILICO N	OCR Scan	PDF	MRF261 O-220AB MRF260 MRF262 MRF264 MRF261
56590653B Abstract: BH Rf transistor Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	PDF	56-590-65/3B MRF492 56590653B BH Rf transistor
Motorola transistors MRF455 Abstract: No abstract text available Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —	OCR Scan	PDF	iF/15 VK200-20/4B, 56-590-65/3B MRF455 Motorola transistors MRF455
J476 Abstract: capacitor j476 NALCO Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package	OCR Scan	PDF	MRF2628 J476 capacitor j476 NALCO
inductor vk200 Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer Text: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.	OCR Scan	PDF	MRF238 inductor vk200 VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
si diode 1N4007 Abstract: MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • • • • 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON	OCR Scan	PDF	MRF6414 MRF6414PHT/D MRF6414 MRF8414 si diode 1N4007 MRF841 MOTOROLA TRANSISTOR 935 150 watts power amplifier layout
MRF449 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 30 W - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR N P N S IL IC O N . . . designed fo r power am plifier application in industrial, com mercial and amateur radio equipment to 30 MHz. •	OCR Scan	PDF
mrf226 Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838 Text: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited	OCR Scan	PDF	MRF226/D MRF226 MRF226/D mrf226 Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
2sc4624 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	PDF	2SC4624 2SC4624 900MHz. 800-900MHz 900MHz
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC4624 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC4624 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers in 800-900 MHz band range. FEATURES • High power gain : Goe S 4.7dB, Po S 45W	OCR Scan	PDF	2SC4624 2SC4624 900MHz. 800-900MHz 900MHz

RF POWER TRANSISTOR NPN Search Results

RF POWER TRANSISTOR NPN Result Highlights (5)

RF POWER TRANSISTOR NPN Datasheets Context Search

NTE359

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

NEC 2501

2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

TVU012

TVU020

BD135

NTE475

BLY93a

UPB2060

2N5643

nec 2501

UPB1835

NTE477

MRF262

56590653B

Motorola transistors MRF455

J476

inductor vk200

si diode 1N4007

MRF449

mrf226

2sc4624

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