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    RF SMD TRANSISTORS PNP Search Results

    RF SMD TRANSISTORS PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    RF SMD TRANSISTORS PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD IC MARKING GP

    Abstract: 2SC2404
    Text: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


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    PDF 2SC2404 OT-23 SMD IC MARKING GP 2SC2404

    MOSFET TRANSISTOR SMD MARKING CODE nh

    Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 smd code marking SOT223 MINI POWER MOSFET SMD TRANSISTOR MARKING BF transistor 313 smd
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS Jörg Lützner ● Achim Renner Package deal for discretes Progressive miniaturization of electronic modules and streamlined production technologies e.g. with molded interconnection devices call for sustained reduction in


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    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


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    PDF B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor

    transistor smd npn ag

    Abstract: SIEMENS SMD TRANSISTOR smd transistor fh MRS sot23
    Text: APPLICATIONS DISCRETE SEMICONDUCTORS ing, the emitter-base voltage VEB pnp is about 0.65 V, the reference voltage Vref about 1.3 V. The voltage drop V (I) is thus fixed at about 0.65 V within the operating range. Margarete Deckers ● Lothar Musiol ● Achim Renner


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    sc74750

    Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
    Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes


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    PDF OT346 SC-59) sc74750 MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921

    Q2N3904

    Abstract: D1N4007 q2n3906 Transistor Q2N3904 mfrc500 source code 13.56Mhz AMPLIFIER 13.56 power amplifier nxp clrc632 antenna npn q2n3904 sample code for MFRC500
    Text: MFRC500, MFRC53x, CLRC632, SLRC400 RF Amplifier for NXP Contactless Reader IC's Rev. 1.0 — 01 June 2007 AN103510 Application note PUBLIC Document information Info Content Keywords MIFARE, ICODE, MFRCxxx, RF Amplifier Design, Active Receiver Design Abstract


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    PDF MFRC500, MFRC53x, CLRC632, SLRC400 AN103510 Q2N3904 D1N4007 q2n3906 Transistor Q2N3904 mfrc500 source code 13.56Mhz AMPLIFIER 13.56 power amplifier nxp clrc632 antenna npn q2n3904 sample code for MFRC500

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


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    PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    BFP620F

    Abstract: TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F
    Text: P B R O D U C T R I E F A new Milestone in Miniaturization of SMD Standard Packages for Discrete Components TSFP stands for Thin Small Flat Package. With a reduced height of max. 0.59 mm vs. 0.8 mm for a SC-75 package and an outline of only 1.2 x 1.2 mm2 for TSFP-3 (vs. 1.6 × 1.6 mm2 for


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    PDF SC-75 SC-75) B114-H7900-X-X-7600 BFP620F TSFP-4 BFR34* transistor BC848BF BA892-07F BAT62-07F BAS40-04F Infineon Technologies transistor 4 ghz BAR63-07F BAV70F

    5962F0721805VXC

    Abstract: No abstract text available
    Text: Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH The ISL73096, ISL73127 and ISL73128 are radiation Features hardened bipolar transistor arrays. The ISL73096 consists of


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    PDF ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH ISL73096, ISL73127 ISL73128 ISL73096 5962F0721805VXC

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


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    PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


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    PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


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    PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    semiconductor w5c

    Abstract: TSDF02424XR transistor w5c W5C smd transistor marking w5c marking w5c smd TSDF02424X W5C 01 smd diodes smd sot-363 rf amplifier W5C smd
    Text: TSDF02424X/TSDF02424XR VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching


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    PDF TSDF02424X/TSDF02424XR TSDF02424XR D-74025 24-Aug-04 semiconductor w5c TSDF02424XR transistor w5c W5C smd transistor marking w5c marking w5c smd TSDF02424X W5C 01 smd diodes smd sot-363 rf amplifier W5C smd

    smd sot-363 rf amplifier

    Abstract: No abstract text available
    Text: TSDF03030X/TSDF03030XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching


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    PDF TSDF03030X/TSDF03030XR 2002/95/EC 2002/96/EC TSDF03030X TSDF03030XR D-74025 02-May-05 smd sot-363 rf amplifier

    semiconductor w5c

    Abstract: W5C smd W5C 01 smd diodes W5C 28 smd smd sot-363 rf amplifier 91 sot363 rf
    Text: TSDF02424X/TSDF02424XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching


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    PDF TSDF02424X/TSDF02424XR TSDF02424X TSDF02424XR D-74025 02-May-05 semiconductor w5c W5C smd W5C 01 smd diodes W5C 28 smd smd sot-363 rf amplifier 91 sot363 rf

    TSDF04040X

    Abstract: TSDF04040XR SOT 363 marking 67 smd sot-363 rf amplifier
    Text: TSDF04040X/TSDF04040XR VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching transistors inside PLL


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    PDF TSDF04040X/TSDF04040XR TSDF04040X) TSDF04040XR) D-74025 24-Aug-04 TSDF04040X TSDF04040XR SOT 363 marking 67 smd sot-363 rf amplifier

    smd sot-363 rf amplifier

    Abstract: smd RF low noise sot-363 MARKING 67 SOT-363 TSDF03030X TSDF03030XR SOT 363 marking 67 RF Transistors VISHAY
    Text: TSDF03030X/TSDF03030XR VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching transistors inside PLL


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    PDF TSDF03030X/TSDF03030XR TSDF03030X) TSDF03030XR) D-74025 24-Aug-04 smd sot-363 rf amplifier smd RF low noise sot-363 MARKING 67 SOT-363 TSDF03030X TSDF03030XR SOT 363 marking 67 RF Transistors VISHAY

    16607

    Abstract: smd sot-363 rf amplifier
    Text: TSDF04040X/TSDF04040XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching


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    PDF TSDF04040X/TSDF04040XR 2002/95/EC 2002/96/EC TSDF04040X TSDF040d D-74025 02-May-05 16607 smd sot-363 rf amplifier

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


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    sot-363 Marking G1

    Abstract: TSDF03030X TSDF03030XR
    Text: TSDF03030X/TSDF03030XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching


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    PDF TSDF03030X/TSDF03030XR 2002/95/EC 2002/96/EC 08-Apr-05 sot-363 Marking G1 TSDF03030X TSDF03030XR

    TSDF04040XR

    Abstract: TSDF04040X
    Text: TSDF04040X/TSDF04040XR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit TY Features CW • Two AGC amplifiers in a single package • Easy Gate 1 switch-off with PNP switching


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    PDF TSDF04040X/TSDF04040XR 2002/95/EC 2002/96/EC 08-Apr-05 TSDF04040XR TSDF04040X

    SMD Code 12W SOT23

    Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
    Text: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH


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    PDF OT-89 CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 SMD Code 12W SOT23 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc

    marking NC sot23

    Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
    Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications


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    PDF OT-23 BFS18 BFS19 BFS20 BF840 BF841 BF579 BF536 BF767 BF824 marking NC sot23 smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGESELLSCHAF bOE D • ÖE3Sb05 O O S m V b 3G7 HISIE6 SIEMENS ^ 3 / - 0/ Transistoren Transistors HF-Transistoren Maximum Ratings ^CEO h Plot V mA mW Chariicteristics rA =25°C F Gp h le ^CE f GHz dB mA V MHz dB Package h mA LU Type N=NPN P=PNP


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    PDF E3Sb05 BF517 BF550 BF554 BF569 OT-143 BFQ82 BFQ196