RF TRANSISTOR 200W Search Results

RF TRANSISTOR 200W Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR 200W Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MRF660 Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040	Original	PDF	2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
F1170 Abstract: F1J4 Text: polyfet rf devices F1170 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	PDF	F1170 F1170 F1J4
F1070 Abstract: No abstract text available Text: polyfet rf devices F1070 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base	Original	PDF	F1070 F1070
Untitled Abstract: No abstract text available Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF161 150MHz 30MHz, 150MHz, MRF151
VK200-4B Abstract: No abstract text available Text: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	PDF	VRF161 150MHz 30MHz, 150MHz, MRF151 VK200-4B
200w power amplifier circuit diagram Abstract: AN1385 LDMOS digital ISL21400 MRF9080 Text: LDMOS Transistor Bias Control in Basestation RF Power Amplifiers Using Intersil’s ISL21400 Application Note February 27, 2007 Introduction AN1385.0 The ISL21400 Programmable Output Temperature Sensor IC LDMOS transistors are used for RF Power Amplification in	Original	PDF	ISL21400 AN1385 ISL21400 200w power amplifier circuit diagram LDMOS digital MRF9080
Untitled Abstract: No abstract text available Text: Part Number: Integra ILD1214EL200 TECHNOLOGIES, INC. L-Band RF Power LDMOS Transistor Silicon LDMOS  High Power Gain  Superior Thermal Stability The high power pulsed transistor part number ILD1214EL200 is designed for L-Band systems operating at 1.215–1.400 GHz. Operating at a pulse width of 16ms	Original	PDF	ILD1214EL200 ILD1214EL200 ILD1214EL200-REV-NC-DS-REV-NC
TH430 Abstract: SD1728 M177 Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and	Original	PDF	SD1728 TH430) 56MHz SD1728 TH430 TH430 SD1728 M177
MOSFET J140 Abstract: DU2820S 200w Transistor transistor 200w RF POWER MOSFET TRANSISTOR 100MHz Text: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	DU2820S 2-175MHz, MOSFET J140 DU2820S 200w Transistor transistor 200w RF POWER MOSFET TRANSISTOR 100MHz
Untitled Abstract: No abstract text available Text: DU2820S RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	DU2820S 2-175MHz,
Untitled Abstract: No abstract text available Text: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	DU28200M 2-175MHz,
DU28200M Abstract: DU28200 Text: DU28200M RF Power MOSFET Transistor 200W, 2-175MHz, 28V M/A-COM Products Released; RoHS Compliant Package Outline Features • • • • • N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power	Original	PDF	DU28200M 2-175MHz, DU28200M DU28200
TH430 Abstract: M177 JESD97 SD1728 TH430 marking Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and	Original	PDF	SD1728 TH430) 56MHz SD1728 TH430 TH430 M177 JESD97 TH430 marking
TRANSISTOR J15 Abstract: PIMD3 Text: NPT1007 Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	PDF	NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 TRANSISTOR J15 PIMD3

NPT1007 Abstract: 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101 EAR99 Text: NPT1007 Datasheet Gallium Nitride 28V, 200W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for narrowband and broadband applications from from DC – 1200MHz • 200W P3dB CW power at 900MHz in quadrature	Original	PDF	NPT1007 1200MHz 900MHz 500-1000MHz AD-014 EAR99 1400mA1, 900MHz, NDS-012 2305 transistor transistor A114 NPT1007B 200W PUSH-PULL 1000v 200w Transistor c101 TRANSISTOR transistor C101 transistor equivalent table c101
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	PDF	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Untitled Abstract: No abstract text available Text: DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES High Power Gain Excellent Ruggedness	Original	PDF	HVV0912-450 HV800 MIL-STD-883,
Untitled Abstract: No abstract text available Text: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW	Original	PDF	IDM500CW200 IDM500CW200 2x100mA IDM500CW200-REV-NC-DS-REV-C
Untitled Abstract: No abstract text available Text: Part Number: Integra IDM30512CW50 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 MHz under CW conditions. Over the	Original	PDF	IDM30512CW50 IDM30512CW50 30-512MHz 400MHz. 2x100mA IDM30512CW50-REV-NC-DS-REV-NC
1416-200 Abstract: No abstract text available Text: 1416 - 200 200 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz GENERAL DESCRIPTION The 1416-200 is an internally matched, COMMON BASE transistor capable of providing 200 Watts of pulsed RF output power at one microsecond pulse width, ten percent duty factor across the band 1400-1600 MHz. This	Original	PDF	1600MHz, 1416-200
2731GN-200M Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374 Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF	Original	PDF	2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374
2731GN Abstract: No abstract text available Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF	Original	PDF	2731GN-200M 2731GN 55-QP 55-QP 2731GN
C1f TRANSISTOR Abstract: 200w Transistor rf transistor 200w QPP-025 class d 200w Text: QPP-025 200W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-025 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The	Original	PDF	QPP-025 925-960MHz QPP-025 H10549) H10895) C1f TRANSISTOR 200w Transistor rf transistor 200w class d 200w
capacitor 50uf Abstract: balun 50 ohm DU28200M transistor c s z 44 v Text: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices	OCR Scan	PDF	DU28200M 13PARTS 500pF 2700OHM DU28200M 1000pF capacitor 50uf balun 50 ohm transistor c s z 44 v

RF TRANSISTOR 200W Search Results

RF TRANSISTOR 200W Result Highlights (5)

RF TRANSISTOR 200W Datasheets Context Search

MRF660

F1170

F1070

Untitled

VK200-4B

200w power amplifier circuit diagram

Untitled

TH430

MOSFET J140

Untitled

Untitled

DU28200M

TH430

TRANSISTOR J15

NPT1007

transistor 5cw

Untitled

Untitled

Untitled

1416-200

2731GN-200M

2731GN

C1f TRANSISTOR

capacitor 50uf