RF TRANSISTOR 2N2222 Search Results

RF TRANSISTOR 2N2222 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR 2N2222 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CRCW08050R0FKEA Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222 Text: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P	Original	PDF	AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF862/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF862 Motorola Preferred Device Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the	Original	PDF	MRF862/D MRF862 MRF862/D*
capacitor 2200 uF Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750 Text: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.	Original	PDF	BLF4G10-160 ACPR400 ACPR600 ACPR750 ACPR1980 BLF4G10-160 capacitor 2200 uF transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08
DELTA fan bfb Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage	Original	PDF	MPSH81 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 DELTA fan bfb BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
FERRITE TOROID Abstract: motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola Text: MOTOROLA Order this document by MRA1000–3.5L/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large–signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers	Original	PDF	MRA1000 MRA1000-3 FERRITE TOROID motorola 2n2222 2N2222 TIP41 TIP41 amplifier 10 35L C5 2N2222 motorola
MSC2404 Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage	Original	PDF	MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
2N2222 die Abstract: light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222 Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry. This is shown by recent trends in power transistor technology. Safe-area, voltage and current handling capability have been increased to limits far in excess of package power dissipation. In RF transistors, devices are now available and able to withstand badly mismatched loads without	Original	PDF	an007418 2N2222 die light activated switch 2N2222 application note emitter follower AN-110 LM105 LM195 2N2222 NPN Transistor features 12v bulb national 2n2222 equivalent component of transistor 2N2222
IC 7418 Abstract: IC 7418 by national semiconductor 7418 national 2n2222 RF Transistor 2n2222 PNP Transistor 2N2222 equivalent LM195 2N2222 application note emitter follower A-083081-2 tl 2n2222 Text: INTRODUCTION Overload protection is perhaps most necessary in power circuitry This is shown by recent trends in power transistor technology Safe-area voltage and current handling capability have been increased to limits far in excess of package power dissipation In RF transistors devices are now available and able to withstand badly mismatched loads without	Original	PDF
2sc3052ef Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters	Original	PDF	24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	PDF	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
DCS foxboro Abstract: transistor 2n2222 Philips Electrolytic Capacitor 2200uf gsm signal amplifier NPN transistor 2n2222 C5 MARKING TRANSISTOR gsm circuit diagram philips Trimmers transistor 2N2222 PHILIPS TRANSISTOR 2n2222 p1 Text: Application Note Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications AN10229_1 Philips Semiconductors TPAN02_02W97 Philips Semiconductors Using the BLF1820-90 LDMOS Transistor for PCS band GSM and EDGE GSM Applications Application Note	Original	PDF	BLF1820-90 AN10229 TPAN02 02W97 DCS foxboro transistor 2n2222 Philips Electrolytic Capacitor 2200uf gsm signal amplifier NPN transistor 2n2222 C5 MARKING TRANSISTOR gsm circuit diagram philips Trimmers transistor 2N2222 PHILIPS TRANSISTOR 2n2222 p1
GRM32ER7YA106K88L Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E Text: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station	Original	PDF	AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
transistor 2N2222 SMD Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980 Text: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF4G10LS-160 ACPR400 ACPR600 BLF4G10LS-160 transistor 2N2222 SMD capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
NPN transistor 2n2222 Abstract: TRANSISTOR 2N2222 foxboro philips Basestation transistor 2N2222 PHILIPS ATC100B transistor 7808 7808 voltage regulator ATC100A BLF0810-90 Text: Application Note BLF0810-90 Linear LDMOS for CDMA Basestation Applications in the Cellular Band AN10228_1 Philips Semiconductors TPAN02_02W97 Philips Semiconductors BLF0810-90 Application Note AN10228_1 Abstract The application note presents the performance of the BLF0810-90, Philips’ 90 W LDMOS	Original	PDF	BLF0810-90 AN10228 TPAN02 02W97 BLF0810-90, IS-95 BLF0810-90 CDMA2000, NPN transistor 2n2222 TRANSISTOR 2N2222 foxboro philips Basestation transistor 2N2222 PHILIPS ATC100B transistor 7808 7808 voltage regulator ATC100A

NJM 78L08UA-ND Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,	Original	PDF	AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
transistor motorola 114-8 Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8 Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	PDF	MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
NPN transistor 2n2222 Zin Abstract: 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1 Text: O rder th is data sheet by MRF858/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F L in e MRF858 NPN Silicon RF Power Transistor M otorola P referre d D evice CLASS A 8 00-960 MHz 3.6 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	PDF	MRF858/D MK145BP 2PHX33729Q-0 NPN transistor 2n2222 Zin 2N2222 npn transistor 2N2222 transistor SOA 358E-06 NT 407 F TRANSISTOR TO 220 2N2222 motorola ATIC 59 C1
MRF860 Abstract: 2n2222 npn transistor 2N2222 rf Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	PDF	MRF860/D 2PHX33728Q-0 MRF860 2n2222 npn transistor 2N2222 rf
2n2222 npn Abstract: 2n2222 npn transistor MRF857 mrf857s Text: O rder th is data sheet by MRF857/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF857 M RF857S T h e RF Line NPN Silicon RF Pow er TVansistor M otorola P referred Devices CLASS A 800-960 MHz 2.1 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	PDF	MRF857/D 2PHX33732Q-0 2n2222 npn 2n2222 npn transistor MRF857 mrf857s
2n2222 npn transistor Abstract: No abstract text available Text: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	PDF	MRF862/D 2PHX33726Q-0 2n2222 npn transistor
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	PDF	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
bd7995 Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361 Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND	OCR Scan	PDF	8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
2n2222 npn transistor footprint Abstract: 2N2222A motorola Transistor 2SA 2SB 2SC 2SD RF Transistor 2n2222 Transistor comparable types MRF872 2sa Japanese Transistor 2N2222 2n2222 sot323 JAPANESE TRANSISTOR 2SC Text: Discrete Product Lines Understanding D evice Prefixes Off-the-shelf surface mount products include most popular small-signal U. S., European and Asian types. Most U. S. standard Motorola SOT-23 devices will have a common alpha prefix, “MMB,” a fourth alpha character which	OCR Scan	PDF	OT-23 2N2222 MMBT2222. OT-143 2n2222 npn transistor footprint 2N2222A motorola Transistor 2SA 2SB 2SC 2SD RF Transistor 2n2222 Transistor comparable types MRF872 2sa Japanese Transistor 2n2222 sot323 JAPANESE TRANSISTOR 2SC
Untitled Abstract: No abstract text available Text: APPLICATION NOTE - AWR0900 AWR0900 Wireless Receiver GaAs 1C Rev 1 Introduction The ANADIGICS' wireless receiver IC is a fully monolithic downconverter intended for use in cordless telephone and wireless local area network LAN applications. The downconverter is fabricated using the	OCR Scan	PDF	AWR0900

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RF TRANSISTOR 2N2222 Search Results

RF TRANSISTOR 2N2222 Result Highlights (5)

RF TRANSISTOR 2N2222 Datasheets Context Search

CRCW08050R0FKEA

Untitled

capacitor 2200 uF

DELTA fan bfb

FERRITE TOROID

MSC2404

2N2222 die

IC 7418

2sc3052ef

Q2N4401

DCS foxboro

GRM32ER7YA106K88L

transistor 2N2222 SMD

NPN transistor 2n2222

NJM 78L08UA-ND

transistor motorola 114-8

NPN transistor 2n2222 Zin

MRF860

2n2222 npn

2n2222 npn transistor

Motorola transistors MRF 947

bd7995

2n2222 npn transistor footprint

Untitled