RF TRANSISTOR IMPEDANCE MATCHING Search Results

RF TRANSISTOR IMPEDANCE MATCHING Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

RF TRANSISTOR IMPEDANCE MATCHING Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TVU012 Abstract: 420 NPN Silicon RF Transistor ASI10646 Text: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.	Original	TVU012 TVU012 420 NPN Silicon RF Transistor ASI10646	PDF
TVU020 Abstract: RF Bipolar Transistor 2108-G ASI10648 Text: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband	Original	TVU020 TVU020 RF Bipolar Transistor 2108-G ASI10648	PDF
nte352 Abstract: w65 transistor Text: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and	Original	NTE352 NTE352 136-175MHz 175MHz 175MHz, w65 transistor	PDF
SD1536-08 Abstract: TACAN Text: ASI SD1536-08 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 SQ 2L FL DESCRIPTION: The ASI SD1536-08 is a Common Base Device Designed for DME IFF, and TACAN Pulse Applications. 1 3 FEATURES INCLUDE: 2 • Gold Metallization • Internal Impedance Matching	Original	SD1536-08 SD1536-08 TACAN	PDF
TACAN transistor Abstract: No abstract text available Text: SD1520-02 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI SD1520-02 is Designed for IFF, DME and TACAN applications. A .1 0 0 x 4 5 ° FEATURES: C • Internal impedance matching • PG = 10 dB at 1.0 W/1150 MHz • Omnigold Metalization System	Original	SD1520-02 SD1520-02 TACAN transistor	PDF
mda540 Abstract: BLV100 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES BLV100 PIN CONFIGURATION • Internal input matching to achieve high power gain • Ballasting resistors for an optimum	Original	BLV100 OT171 mda540 BLV100	PDF
AIRBORNE DME Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with	Original	HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12	PDF
433.92mhz receiver Abstract: No abstract text available Text: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the	Original	92MHz D-81617 92MHz 433.92mhz receiver	PDF
433.92mhz rf receiver Abstract: 433.92mhz 433.92mhz rf ic uaa3201t B3550 4339 smd transistor AE ANTENNA-FILTER Text: Application Note SAW-Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the	Original	92MHz 92MHz D-81617 433.92mhz rf receiver 433.92mhz 433.92mhz rf ic uaa3201t B3550 4339 smd transistor AE ANTENNA-FILTER	PDF
c55 siemens Abstract: SIEMENS saw filter 433.92mhz rf receiver B3550 UAA3201T Siemens ofw siemens matsua saw 45 siemens matsua saw filter saw Siemens matsua matsua saw Text: Siemens Matsushita Components Preamplifier – SAW filter section for a receiver in the ISM band @ 433.92MHz App. Note #8 Abstract: In this application a preamplifier is described. The amplifier simplifies the matching of the antenna to the SAW-filter and increases the system sensitivity by reducing the	Original	92MHz 92MHz B3550 c55 siemens SIEMENS saw filter 433.92mhz rf receiver UAA3201T Siemens ofw siemens matsua saw 45 siemens matsua saw filter saw Siemens matsua matsua saw	PDF
TH720XX Abstract: rf power amplifier transistor with s-parameters transistor RF S-parameters TH720x "Rf Transmitter" AN720xx-PA Text: Application Note Transmitters TH720xx / Transceivers TH7122x PA Output Matching Almost all low-power RF transmitter ICs have an on-chip power amplifier stage where the output pin is either an open collector or open drain. The RF power amplifier stage of all Melexis transmitters is setup with a	Original	TH720xx TH7122x AN720xx-PA March/06 ISO14001 rf power amplifier transistor with s-parameters transistor RF S-parameters TH720x "Rf Transmitter"	PDF
transistor SMD 12W MOSFET Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the	Original	HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w	PDF
BLV97CE Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171	Original	BLV97CE OT171 BLV97CE	PDF
BLV98CE Abstract: MDA459 MDA456 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171	Original	BLV98CE OT-171 BLV98CE MDA459 MDA456	PDF

MRA359 Abstract: MDA536 BLV103 MRA364 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for	Original	BLV103 MRA359 MDA536 BLV103 MRA364	PDF
transistor GaN Abstract: No abstract text available Text: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features Rev. V3 MAGX-000035-010000 Flanged • GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching	Original	MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-01000X transistor GaN	PDF
AN721 Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083 Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer	Original	AN721/D AN721 AN721 EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083	PDF
2N6083 Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer	Original	AN721/D AN721 2N6083 AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A	PDF
shunt reactor Abstract: 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A Text: Freescale Semiconductor Application Note AN721 Rev. 1, 10/2005 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Impedance Matching Networks Applied to RF Power Transistors By: B. Becciolini	Original	AN721 shunt reactor 2n6083 an721 AN721 AN7212 AN7218 Design of H. F. Wideband Power Transformers 2N5642 2N6083 AN267 AN282A	PDF
Untitled Abstract: No abstract text available Text: N AI1ER PHILIPS/DISCRETE bTE D • bbS3T31 0D2TlflQ 2flQ Philips Semiconductors D ata sheet status P ro d u c t s p e c ific a tio n d a te of issue March 1 9 9 3 BLV98CE UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve	OCR Scan	bbS3T31 BLV98CE OT171 bb53T31 MCA924	PDF
71009 SB Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series Text: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an	OCR Scan	BLV98CE OT-171 711002b 00b3QÃ 71009 SB transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series	PDF
ceramic capacitor 470 pf Abstract: philips carbon film resistor philips transistor sot122 MCB117 Text: • T llQ Ö S h UHF power transistor FEATURES • Internal input matching, to achieve wide bandwidth • Ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability. DDbETO b ‘H ö philips « P H IN BLU15/12	OCR Scan	BLU15/12 OT122 OT122A MCBT16 ceramic capacitor 470 pf philips carbon film resistor philips transistor sot122 MCB117	PDF
SOT423 Abstract: s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ Text: Philips Semiconductors Preliminary specification Microwave power transistor BLS2731 -110 FEATURES PINNING - SOT423A • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy circuit design DESCRIPTION	OCR Scan	BLS2731 OT423A SOT423 s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ	PDF
TIC 122 Transistor Abstract: RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10 Text: DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C • Suitable for short and medium pulse applications PIN • Internal input and output matching networks for an easy	OCR Scan	BLS3135-10 OT445C TIC 122 Transistor RF NPN POWER TRANSISTOR 3 GHZ TRANSISTOR C 557 B RF NPN POWER TRANSISTOR C 10-12 GHZ BLS3135-10	PDF

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RF TRANSISTOR IMPEDANCE MATCHING Search Results

RF TRANSISTOR IMPEDANCE MATCHING Result Highlights (5)

RF TRANSISTOR IMPEDANCE MATCHING Datasheets Context Search

TVU012

TVU020

nte352

SD1536-08

TACAN transistor

mda540

AIRBORNE DME

433.92mhz receiver

433.92mhz rf receiver

c55 siemens

TH720XX

transistor SMD 12W MOSFET

BLV97CE

BLV98CE

MRA359

transistor GaN

AN721

2N6083

shunt reactor

Untitled

71009 SB

ceramic capacitor 470 pf

SOT423

TIC 122 Transistor