Untitled
Abstract: No abstract text available
Text: RF3095 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)22 V(BR)CBO (V) I(C) Max. (A)0.4 Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250u @V(CBO) (V) (Test Condition)28
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RF3095
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RF3094
Abstract: RF3096 RF3095
Text: MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR Mb E D • b3b?254 OG^bflS T 3 1 - 2 3 I I M0 T b Order this data sheet by RF3094/D a TECHNICAL DATA RF3094 RF3095 RF3096 The RF Line M ic ro w a v e Linear P ow er
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RF3094/D
RF3094
RF3095
RF3096
RF3094
RF3095
RF3096
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistor M RF3095 Designed for Class A, common emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts Gain — 9 .0 -1 2 dB
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RF3095
28A-03,
MRF3095
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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F3096
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF3094 RF3095 MRF3096 Microwave Linear Power Transistors Designed for Class A, com mon emitter linear power amplifiers. • Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts
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MRF3094
MRF3095
MRF3096
MRF3096
F3096
F3096
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