VK200 rfc
Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Text: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.
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NTE320/NTE320F
175MHz
NTE320
NTE320F
300MHz.
175MHz
NTE320
NTE320F
1000pF
100pF
VK200 rfc
vk200
vk200* FERROXCUBE
vk200 rfc with 6 turns
T72 5VDC
vk200-20
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VK200 rfc
Abstract: MRF224 motorola rf Power Transistor VK200 MOTOROLA POWER TRANSISTOR 14
Text: MOTOROLA Order this document by MRF224/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF224 . . . designed for 12.5 Volt VHF large–signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies.
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MRF224/D
MRF224
MRF224/D*
VK200 rfc
MRF224
motorola rf Power Transistor
VK200
MOTOROLA POWER TRANSISTOR 14
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VK200 rfc
Abstract: vk200 rfc with 6 turns SD1460 vk200 choke vk200 SD1143
Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION
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SD1460
SD1143
VK200 rfc
vk200 rfc with 6 turns
SD1460
vk200 choke
vk200
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vk200 rfc with 6 turns
Abstract: VK200 rfc choke vk200 SD1460 vk200 vk200 choke vk200 rf choke VK200-19/4B vk200 chokes SD1143
Text: SD1460 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P OUT = 150 W MIN. WITH 9.2 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1460 BRANDING SD1460 PIN CONNECTION DESCRIPTION
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SD1460
SD1143
vk200 rfc with 6 turns
VK200 rfc
choke vk200
SD1460
vk200
vk200 choke
vk200 rf choke
VK200-19/4B
vk200 chokes
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choke vk200
Abstract: VK200 rfc vk200 rfc with 6 turns STMicroelectronics marking code date SD1460 marking code stmicroelectronics vk200 rf choke VK200-19/4B STMicroelectronics marking code Date Code Marking STMicroelectronics
Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM
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SD1460
SD1460
choke vk200
VK200 rfc
vk200 rfc with 6 turns
STMicroelectronics marking code date
marking code stmicroelectronics
vk200 rf choke
VK200-19/4B
STMicroelectronics marking code
Date Code Marking STMicroelectronics
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vk200 rfc with 6 turns
Abstract: vk200 choke SD1460 vk200* FERROXCUBE vk200 rf choke VK200 rfc VK200 TSD-1460 3-M-K-6098
Text: SD1460 RF POWER BIPOLAR TRANSISTORS FM BROADCAST APPLICATIONS FEATURES SUMMARY • 108 MHz Figure 1. Package ■ 28 VOLTS ■ EFFICIENCY 75% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W MIN. WITH 9.2 dB GAIN DESCRIPTION The SD1460 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for VHF FM
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SD1460
SD1460
vk200 rfc with 6 turns
vk200 choke
vk200* FERROXCUBE
vk200 rf choke
VK200 rfc
VK200
TSD-1460
3-M-K-6098
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vk200 choke
Abstract: J309 J310 VK200 rfc J308 MVM010W U310 539-002 J308-D
Text: J308 JFET VHF/UHF Amplifiers N−Channel — Depletion http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C
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O-226AA)
J308/D
vk200 choke
J309
J310
VK200 rfc
J308
MVM010W
U310
539-002
J308-D
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vk200 choke
Abstract: J310 jfet J309 J308 MVM010W j310 U-310 U310 J310 equivalent variable trimmer
Text: ON Semiconductort J308 J309 J310 JFET VHF/UHF Amplifiers N–Channel — Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc
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226AA)
r14525
J308/D
vk200 choke
J310 jfet
J309
J308
MVM010W
j310
U-310
U310
J310 equivalent
variable trimmer
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motorola rf device
Abstract: motorola rf Power Transistor VK200 rfc RF POWER TRANSISTOR NPN VK-200 2 w RF POWER TRANSISTOR NPN MRF224
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF224 The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • 40 W, 175 MHz
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MRF224
MRF224
VK200-20/4B,
motorola rf device
motorola rf Power Transistor
VK200 rfc
RF POWER TRANSISTOR NPN
VK-200
2 w RF POWER TRANSISTOR NPN
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MRF581
Abstract: MRF581A IS211 MRF581M f5b FERRITE f5b FERRITE bead
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF581 MRF581A The RF Line NPN Silicon High-Frequency Transistors . . . designed for high current low power amplifiers up to 1.0 GHz. • lc = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS NPN SILICON Low Noise 2.0 dB @ 500 MHz
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MRF581
MRF581A
VK-200,
56-590-65/3B
MRF581A
IS211
MRF581M
f5b FERRITE
f5b FERRITE bead
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VK200 rfc
Abstract: FERROXCUBE VK200 Arco 403 MRF225 vk200 vk200 rf choke transistor 4040 choke vk200 vk200 choke vk200 rfc with 6 turns
Text: MRF225 silicon T h e R F Lin e 1.5 W - 2 2 5 M H z RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR NPN S IL IC O N . . . designed fo r 12.5 V o lt large-signal pow er a m p lifie r app lica tio n s in c o m m u n ic a tio n e q u ip m e n t o p e ra tin g a t 225 M H z. Id e a lly suited
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MRF225
VK200 rfc
FERROXCUBE VK200
Arco 403
MRF225
vk200
vk200 rf choke
transistor 4040
choke vk200
vk200 choke
vk200 rfc with 6 turns
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Untitled
Abstract: No abstract text available
Text: f Z 7 SGS-THOMSON ^ 7 #. • . ■ . ■ . SD1460 K M « « ® « ! RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 dB GAIN PIN CONNECTION V 1 \ of jo
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SD1460
SD1143
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MOROCCO B 108 B
Abstract: No abstract text available
Text: r=7 SGS-1H0MS0N SD1460 * 7# . M »ilL§O T M []@ § RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS « . . . . • 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 150 W MIN. WITH 9.2 GAIN dB PIN CONNECTION a 1 (of jO 4 DESCRIPTION
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SD1460
SD1143
MOROCCO B 108 B
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vk200* FERROXCUBE
Abstract: MRF571
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA
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MRF571
VK-200,
56-590-65/3B
vk200* FERROXCUBE
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mrf5812 equivalent
Abstract: MRFS812 MRF5812 RF5812 MRF581 MRFS81
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilicon H igh-Frequency Transistors MRF581 MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion lc = 200 mA LOW NOISE
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F5812
MRF581
MRF5812R1,
MRF581
MRFS812
VK-200,
56-590-65/3B
mrf5812 equivalent
MRF5812
RF5812
MRFS81
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MRF5711LT1
Abstract: MRF571 MBR571 MPS571 E4E SOT23 vqb 71 LG 631 IC Motorola TE 2198 MBR571LT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency TVansistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as
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O-226AA
MRF5711LT1,
MRF571)
A/500
MMBR571LT1)
MRF5711LT1)
MMBR571LT1
MPS571
MRF571
MRF5711LT1
MBR571
E4E SOT23
vqb 71
LG 631 IC
Motorola TE 2198
MBR571LT1
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MRF618
Abstract: JOHANSON 2951 transistor BF 697 O17O Allen-Bradley 1336 2951C-3 Unelco AN548 CI 2951
Text: MRF618 SILICON The R.F Line 15 W - 4 7 0 MHz C O N T R O LLED Q RF POWER T R A N SIST O R NPN SIL IC O N NPN SIL IC O N RF POWER T R A N SIST O R . . .designed fo r 12.5 V o lt U H F large-signal am plifier a pplication s in industrial a nd com m e rcial F M equipm e nt o perating to 5 2 0 M H z .
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MRF618
FERROXCUBEVK200
MRF618
JOHANSON 2951
transistor BF 697
O17O
Allen-Bradley 1336
2951C-3
Unelco
AN548
CI 2951
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ferroxcube for ferrite beads 56-590-65
Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Text: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar
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N5944
PA18936Â
2N5944
56-590-65/3B
VK200/10-3B
ferroxcube for ferrite beads 56-590-65
VK200 ferrite
inductor vk200
VK200 rfc
VK200
ferroxcube for ferrite beads
THOMSON-CSF electrolytic
VK200 INDUCTOR
565-9065
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motorola rf device
Abstract: motorola rf Power Transistor vk200-20 MRF224 vk200 VK200 rfc RF POWER TRANSISTOR NPN npn transistor 70 volt RF POWER TRANSISTOR NPN vhf RF POWER TRANSISTOR NPN, motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. • Specified 12.5 Volt, 175 MHz Characteristics —
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VK200-20/4B,
3b7554
MRF224
b3b7E54
motorola rf device
motorola rf Power Transistor
vk200-20
vk200
VK200 rfc
RF POWER TRANSISTOR NPN
npn transistor 70 volt
RF POWER TRANSISTOR NPN vhf
RF POWER TRANSISTOR NPN, motorola
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rfc vk200
Abstract: SD1012
Text: 04C D J L j ^ l L 37 S G S-THOMSON IT '7 ? ~ P 7 0000015 ^ I SOLID $TAtE MIÇROWAVE SD1012-4 ! ^THOMSON-CSF COMPONENTS CORPORATION r j:Mont^pmVvviÎÎè^PAX8^36 • C2fSt 362-85QÓ Ì« TWX Slb:66r^729St^ 7.5 VOLT VHF COMMUNICATIONS TRANSISTOR DESCRIPI10N
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SD1012-4
362-85QÓ
729St^
DESCRIPI10N
SD1012-4
10/UF
VK200
rfc vk200
SD1012
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SD1088
Abstract: vk200 RFC vk200 rfc with 6 turns zd470 rfc vk200
Text: s G S - T H O M S O N OMC 0 | 7^ 53? aGOOGEl 4 | ° T -ìì-t* UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1088 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes tuned Q technology which consists of a matching network at
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SD1088
VK200
vk200 RFC
vk200 rfc with 6 turns
zd470
rfc vk200
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SD1080-2
Abstract: No abstract text available
Text: s G S-THOMSON S O L I D QMC D | ?^2ci23? OQaDDlfl 4 I ” ' T ~ ? 3 ~ 6 i i r~ S T A T E M I C R O W A V E ^ 7 " ^ SD 1080-2 ! THOMSON-CSF COMPONENTS CORPORATION ; MontgomeryviHe, PA.18936» {215 362-8500" TWX 510-661-7299 : \ , '• v- 7.5 VOLT VHF C O M M U N IC A T IO N S T RA N SIST O R
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SD1080-2
33-G5-
10/iF
VK200
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vk200 RFC
Abstract: thomson microwave transistor sd1234
Text: S~ G S-THOMSON Q4C ° J 7121237 OODOQBI 1 l ~ SOLID STATE MICROWAVE _ T \ 7 * ~ °* L ' : SD1234 THOMSON-CSF COMPONENTS CORPORATION . Montgomeryville, PA 18936 • 215 855-8400 ■ TWX 510-661-7299 . _ UHF C O M M U N I C A T I O N S T R A N S I S T O R
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SD1234
SD1234
VK200
vk200 RFC
thomson microwave transistor
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VK200 rfc
Abstract: SD1410 SD-1410
Text: G S-THOMSON GSC D | 7 ^ 2 3 7 □ÜGQ1 7b T SOLID STATE MICROWAVE SD1410-1 THOMSON-CSF COMPONENTS CORPORATION Montgomeryville,.PA 18936» {215} 362-8500 • TWX 510-66Î-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1410-1 is a 12 volt epitaxial silicon NPN planar
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SD1410-1
SD1410-1
VK200
VK200 rfc
SD1410
SD-1410
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