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    onsemi RFD16N05LSM9A

    MOSFET N-CH 50V 16A TO252AA
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    onsemi RFD16N05SM9A

    MOSFET N-CH 50V 16A TO252AA
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    DigiKey RFD16N05SM9A Cut Tape 2,658 1
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    RFD16N05SM9A Reel 2,500 2,500
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    RFD16N05SM9A 1 36 Weeks 1
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    UMW RFD16N05LSM9A

    MOSFET N-CH 50V 16A DPAK
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    DigiKey RFD16N05LSM9A Cut Tape 2,500 1
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    RFD16N05LSM9A Reel 2,500 2,500
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    Rochester Electronics LLC RFD16N05

    MOSFET N-CH 50V 16A IPAK
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    DigiKey RFD16N05 Tube 300
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    onsemi RFD16N05

    MOSFET N-CH 50V 16A I-PAK
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    RFD16N05 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD16N05 Fairchild Semiconductor 16A, 50V, 0.047 ?, N-Channel Power MOSFETs Original PDF
    RFD16N05 Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Original PDF
    RFD16N05 Harris Semiconductor 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFD16N05 Intersil 16A, 50V, 0.047 ?, N-Channel Power MOSFETs Original PDF
    RFD16N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD16N05 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFD16N05 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFD16N05L Fairchild Semiconductor 16 A, 50 V, 0.047 ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N05L Fairchild Semiconductor 16A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFETs Original PDF
    RFD16N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD16N05L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFD16N05L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFD16N05LSM Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Original PDF
    RFD16N05LSM Fairchild Semiconductor 16 A, 50 V, 0.047 ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N05LSM Harris Semiconductor Power MOSFET Product Matrix Original PDF
    RFD16N05LSM Intersil 16A, 50V, 0.047 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD16N05LSM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD16N05LSM Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFD16N05LSM Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFD16N05LSM9A Fairchild Semiconductor 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Original PDF

    RFD16N05 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-252AA fairchild

    Abstract: RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original
    PDF RFD16N05L, RFD16N05LSM TO-252AA fairchild RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original
    PDF RFD16N05L, RFD16N05LSM

    38E-3

    Abstract: JEDEC TO-251AA RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original
    PDF RFD16N05L, RFD16N05LSM 38E-3 JEDEC TO-251AA RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM Data Sheet Title FD1 05L D16 5LS bt A, V, 47 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA April 1999 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel logic level power MOSFETs


    Original
    PDF RFD16N05L, RFD16N05LSM

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet Title FD1 05, D16 5S bt A, V, 47 m, anwer OSTs utho eyrds ter- July 1999 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Features The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process.


    Original
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771.

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original
    PDF RFD16N05L, RFD16N05LSM

    f16n05

    Abstract: RFD16N05SM9A AN7254 AN7260 AN9321 AN9322 RFD16N05 RFD16N05SM
    Text: RFD16N05, RFD16N05SM S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V SOURCE DRAIN GATE • rDS ON = 0.047Ω • Temperature Compensating PSPICE Model


    Original
    PDF RFD16N05, RFD16N05SM O-251AA 175oC O-252AA RFD16N05 RFD16N05SM 1e-30 07e-3 19e-7) f16n05 RFD16N05SM9A AN7254 AN7260 AN9321 AN9322

    38E-3

    Abstract: RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334 TA09871
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 16A, 50V These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original
    PDF RFD16N05L, RFD16N05LSM 38E-3 RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334 TA09871

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05LSM September 2013 Data Sheet N-Channel Logic Level Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original
    PDF RFD16N05LSM RFD16N05LSM

    D16N05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. D16N05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05SM September 2013 Data Sheet N-Channel Power MOSFET 50V, 16A, 47 mΩ Features • 16A, 50V The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original
    PDF RFD16N05SM RFD16N05 RFD16N05SM TA09771. RFD16N05SM9A

    f16n05

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. f16n05 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771.

    1N5994B

    Abstract: No abstract text available
    Text: LT1161 Quad Protected High-Side MOSFET Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 8V to 48V Power Supply Range Protected from – 15V to 60V Supply Transients Fully Enhances N-Channel MOSFET Switches Individual Short-Circuit Protection


    Original
    PDF LT1161 20-Lead LT1161 LT1910 LTC1922-1 LTC1923 28-Pin 1161fa 1N5994B

    RF1S42N03L

    Abstract: No abstract text available
    Text: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM


    OCR Scan
    PDF RFD20N02SM RFD8P05SM RFD16N05SM RFD14N05SM RFD15P05SM RFD16N06SM RFD14N06SM RFD15P06SM RFD8P06ESM RFD3055SM RF1S42N03L

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM S em iconductor A p ril 1999 D ata S h eet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan
    PDF RFD16N05L, RFD16N05LSM 46E-5) 38E-3 66E-3 614E-3 13E-9 14E-8)

    Untitled

    Abstract: No abstract text available
    Text: interrii RFD16N05, RFD16N05SM D ata S h e e t 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. AN7254 AN7260.

    TA09871

    Abstract: RFD16N05LSM9A
    Text: RFD16N05L, RFD16N05LSM i n t e is gI D a ta S h e e t 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan
    PDF RFD16N05L, RFD16N05LSM TA09871 RFD16N05LSM9A

    304E3

    Abstract: rfd16n05sm9a 66E-6
    Text: RFD16N05, RFD16N05SM HARRIS S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V • r DS O N = 0-047U • Temperature Compensating PSPICE Model ORAIN (FLANGE)


    OCR Scan
    PDF RFD16N05, RFD16N05SM O-251AA 0-047U O-252AA RFD16N05 RFD16N05SM O-251AA O-252AA F16N05 304E3 rfd16n05sm9a 66E-6

    th 2267.1

    Abstract: 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1
    Text: h a f r r RFD16N05 RFD16N05SM i s May 1992 N -Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Packages Features T0 -251 A A • 16A, 50V TOP VIEW • r DS(on) = 0.047 i i >SOURCE • UIS SOA Rating Curve (Single Pulse) DRAIN TAB” • SOA is P o w er-D issipation Lim ited


    OCR Scan
    PDF RFD16N05 RFD16N05SM -252AA RFD16N05SM AN-7260. th 2267.1 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1

    RFD16N05

    Abstract: RFD16N05SM
    Text: Power MegaFETs - RFD16N05, RFD16N05SM File Number 2267 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 16 A , 5 0 V rdsion) = 0 .0 4 7 O TERMINAL DIAGRAM Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited


    OCR Scan
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM CAPGEOISN06CF3 AN-7254 AN-7260. 92CS-4Z922

    RFD16N05LSM

    Abstract: D16N05 D16N05L 200U RFD16N05L
    Text: Logic-Level Power MOSFETs File Number 2269 RFD16N05L, RFD16N05LSM N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 16 A , 50 V l*ds(on) " 0 .0 4 7 f i TERMINAL DIAGRAM Features: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits


    OCR Scan
    PDF RFD16N05L, RFD16N05LSM 92CS-42656 RFD16N05L RFD16N05LSM utilizatio00 92GS-44164 AN-7254 AN-7260. 2CS-42922 D16N05 D16N05L 200U

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05, RFD16N05SM S e m iconductor Data Sheet 16A, 50 V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan
    PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. 047i2