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    RFMD LTE BAND 40 Search Results

    RFMD LTE BAND 40 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC425AJE Rochester Electronics LLC OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 Visit Rochester Electronics LLC Buy
    MAX4352EUK-T Rochester Electronics LLC OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    FCF104 Renesas Electronics Corporation Front-End Low Noise Amplifier for Low-Band (716MHz ~ 960MHz) LTE Applications Visit Renesas Electronics Corporation
    RA7297- Coilcraft Inc LTE choke, ferrite core, 5% tol, SMT, RoHS, halogen-free Visit Coilcraft Inc

    RFMD LTE BAND 40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF7321

    Abstract: band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE
    Text: RF7321 3V LTE Band 11, 21 Linear PA Module Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features            Fully Compliant to LTE Modulation LTE Bands 11, 21 Best-in-Class Efficiency 47%, +28.5dBm Rel 99 output power High Power Gain : 28dB


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    PDF RF7321 10-Pin, -38dBc -39dBc RF7321 203mm 330mm 025mm DS120906 band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE

    RFMD LTE Band 40

    Abstract: No abstract text available
    Text: RFFM7600 RFFM7600 5.0V, 2.5 GHz TO 2.7 GHz HIGH POWER FRONT END MODULE 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE Package: 6mmx6mm Laminate GND 1 GND 2 24 23 GND 22 GND 21 ANT 20 GND 19 17 18 Pdet GND RX  16  Vcc3 3  15 Vreg3  WiMAX Applications


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    PDF RFFM7600 35RFMD DS111121 1000pF RFMD LTE Band 40

    RFMD LTE Band 40

    Abstract: RFMD LTE Band 7 RF5612 RF56123
    Text: RF5612 RF56123.0V to 4.0V, 2.5GHz to 2.7GHz Linear Power Amplifier 3.0V TO 4.0V, 2.5GHz TO 2.7GHz LINEAR POWER AMPLIFIER 8 RFOUT 9 GND 10 VCC VCC VCC Package: 10-Pin, 4.0mmx4.0mmx0.975mm 7 6    1    2 3 4 Output Match 5 Functional Block Diagram


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    PDF RF56123 RF5612 10-Pin, 975mm 27dBm 18dBm 25dBm DS120213s 330pF RFMD LTE Band 40 RFMD LTE Band 7 RF5612

    Untitled

    Abstract: No abstract text available
    Text: RF5612 RF56123.0V to 4.0V, 2.5GHz to 2.7GHz Linear Power Amplifier 3.0V TO 4.0V, 2.5GHz TO 2.7GHz LINEAR POWER AMPLIFIER 8 RFOUT 9 GND 10 VCC VCC VCC Package: 10-Pin, 4.0mmx4.0mmx0.975mm 7 6  LTE DL POUT=18dBm  WiMAX POUT=25dBm  2.5GHz to 2.7GHz Frequency


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    PDF RF5612 RF56123 10-Pin, 975mm 25dBm 18dBm 27dBm DS120213s 330pF

    Untitled

    Abstract: No abstract text available
    Text: RFFM7600 RFFM7600 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE Package: 6mm x 6mm Laminate GND 1 GND 2 Vcc3 3 24 23 22 GND 21 ANT 20 GND 19 16 17 18 Pdet GND RX  15 Vreg3  Pdown 14 Vreg2  GND


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    PDF RFFM7600 27dBm 24dBm, 85VDC 2500MHz 2570MHz

    RFMD PA LTE

    Abstract: LTE rf front end RFMD LTE Band 40
    Text: RFFM7600 RFFM7600 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE 5.0V, 2.5GHz TO 2.7GHz HIGH POWER FRONT END MODULE Package: 6mm x 6mm Laminate GND 1 GND 2 24 23 GND 22 GND 21 ANT 20 GND 19 17 18 Pdet GND RX  16  Vcc3 3  15 Vreg3  WiMAX Applications


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    PDF RFFM7600 RFFM7600 27dBm 24dBm, -48dBc 85VDC 2500MHz 2570MHz 2620MHz RFMD PA LTE LTE rf front end RFMD LTE Band 40

    Untitled

    Abstract: No abstract text available
    Text: RF6276 3 V 700 MHz LTE LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features ̈ ̈ ̈ ̈ ̈ ̈ Input/Output Internally Matched 15% Linear Efficiency at 17 dBm, LPM LTE Compliant at 27 dBm, HPM 34% Linear Efficiency at 27 dBm -35 dBc E-UTRA ACLR at


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    PDF RF6276 16-Pin, RF6276 J-STD-033A. RF6276TR7 DS090730

    RF6276

    Abstract: RFMD LTE Band 40 LTE band 40 J-STD-033A
    Text: RF6276 3 V 700 MHz LTE LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features „ „ „ „ „ „ Input/Output Internally Matched 15% Linear Efficiency at 17 dBm, LPM LTE Compliant at 27 dBm, HPM 34% Linear Efficiency at 27 dBm -35 dBc E-UTRA ACLR at


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    PDF RF6276 16-Pin, RF6276 J-STD-033A. RF6276TR7 DS090730 RFMD LTE Band 40 LTE band 40 J-STD-033A

    RF2818

    Abstract: RF7178 LTE duplexer 700 MHz RF7325 GSM duplexer GPS RF7161 RF73xx RF3225 LTE phone antenna RF2815
    Text: RFMD . M2M Product Portfolio RFMD . ® M2M Product Portfolio An increasing number of devices are shipping with integrated cellular connectivity, creating a steadily growing Machineto-Machine M2M market. Devices and applications are diverse, from automotive and asset tracking, to safety, security


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    PDF RF7161 RF2818 RF7178 LTE duplexer 700 MHz RF7325 GSM duplexer GPS RF73xx RF3225 LTE phone antenna RF2815

    Untitled

    Abstract: No abstract text available
    Text: RF7411 3V WCDMA BAND 1 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm : NDA REQUIRED VBAT Features        HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply 3.0V to 4.2V


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    PDF RF7411 10-Pin, 28dBm 203mm 330mm 025mm DS111206

    RF7411

    Abstract: RFMD LTE Band 40 HSPA Module RFMD PA LTE RFMD LTE Band 7 DS1112 RF741
    Text: RF7411 3V WCDMA BAND 1 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mm x 3mm x 1.0mm : NDA REQUIRED VBAT Features        HSDPA/HSUPA/HSPA+/ LTE High Efficiency WCDMA Operation : 42.5% at POUT = +28dBm Low Voltage Positive Bias Supply 3.0V to 4.2V


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    PDF RF7411 10-Pin, 28dBm RF7411 203mm 330mm 025mm DS111206 RFMD LTE Band 40 HSPA Module RFMD PA LTE RFMD LTE Band 7 DS1112 RF741

    LTE rf front end

    Abstract: DG09 4G lte RF Transceiver power amplifier transceiver 4G LTE 3g amplifier gsm circuit diagram project RF7200 lte RF Transceiver DCS1800 RF7202
    Text: AN RFMD WHITE PAPER RFMD. ® 3G/4G Multimode Cellular Front End Challenges Part 2: Architecture Discussion Kevin Walsh and Jackie Johnson Key Concepts Discussed: • Multiple architecture options available to fill different design needs for 3G/4G cellular front ends.


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    PDF WP090202 LTE rf front end DG09 4G lte RF Transceiver power amplifier transceiver 4G LTE 3g amplifier gsm circuit diagram project RF7200 lte RF Transceiver DCS1800 RF7202

    RF7242

    Abstract: RFMD PA LTE RFMD LTE Band 40
    Text: RF7242 3V W-CDMA BAND 2 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA


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    PDF RF7242 10-Pin, 203mm 330mm 025mm DS110803 RF7242 RFMD PA LTE RFMD LTE Band 40

    RF7248

    Abstract: RFMD LTE Band 40 RFMD PA LTE
    Text: RF7248 3V W-CDMA BAND 8 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.5dBm Linear Output Power (+27.5dBm HSDPA


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    PDF RF7248 10-Pin, 203mm 330mm 025mm DS110803 RF7248 RFMD LTE Band 40 RFMD PA LTE

    RF7244

    Abstract: RFMD PA LTE RFMD LTE Band 40 RFMD LTE Band 7
    Text: RF7244 3V W-CDMA BAND 4 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.25dBm Linear Output Power (+27.25dBm HSDPA


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    PDF RF7244 10-Pin, 25dBm 203mm 330mm 025mm DS110803 RF7244 RFMD PA LTE RFMD LTE Band 40 RFMD LTE Band 7

    SP10T

    Abstract: GSM400 DCS 1800 RX SAW Filter MEMS RF switch CAPACITORS 2110 - 2170mhz power module RFMD LTE Band 40
    Text: RF1293 SWITCH FILTER MODULE WITH FIVE LINEAR 3G/4G PATHS Package Style: 21-pin, 3.2 mm x 3.5 mm x 1.0 mm RF1293 GSM DCS/ PCS Rx Features         GSM 900 Rx Excellent insertion loss and isolation performance Five linear paths offer band


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    PDF RF1293 21-pin, 900MHz) DS110906 SP10T GSM400 DCS 1800 RX SAW Filter MEMS RF switch CAPACITORS 2110 - 2170mhz power module RFMD LTE Band 40

    RF7245

    Abstract: micro amplifier 10pin RFMD PA LTE RFMD LTE Band 40
    Text: RF7245 3V W-CDMA BAND 5 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm VBAT 10 VCC 1 Features           AMP HSDPA /HSUPA /HSPA+/LTE Low Voltage Positive Bias Supply 3.0V to 4.2V +28.25dBm Linear Output Power (+27.25dBm HSDPA


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    PDF RF7245 10-Pin, 25dBm 203mm 330mm 025mm DS110803 RF7245 micro amplifier 10pin RFMD PA LTE RFMD LTE Band 40

    RF2374TR7

    Abstract: DS1106
    Text: RF2374 3V LOW NOISE AMPLIFIER             6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications  7 GAIN SELECT  Low Noise and High Intercept Point Adjustable Bias Current Power Down Control


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    PDF RF2374 800MHz RF2374 DS110615 RF2374SR RF2374TR7 RF2374PCK-410 DS1106

    Untitled

    Abstract: No abstract text available
    Text: RF2374 3V LOW NOISE AMPLIFIER             6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications  7 GAIN SELECT  Low Noise and High Intercept Point Adjustable Bias Current Power Down Control


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    PDF RF2374 800MHz DS130417 RF2374SR RF2374TR7 RF2374PCK-411

    Untitled

    Abstract: No abstract text available
    Text: RF2374 3V LOW NOISE AMPLIFIER             6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications  7 GAIN SELECT  Low Noise and High Intercept Point Adjustable Bias Current Power Down Control


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    PDF RF2374 800MHz DS110615 RF2374SR RF2374TR7 RF2374PCK-410 RF2374PCK-411

    Untitled

    Abstract: No abstract text available
    Text: RF2374 3V LOW NOISE AMPLIFIER             6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications  7 GAIN SELECT  Low Noise and High Intercept Point Adjustable Bias Current Power Down Control


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    PDF RF2374 800MHz DS140519 RF2374SR RF2374TR7 RF2374PCK-411

    DG09

    Abstract: 4G LTE PA 3G HSDPA LTE rf front end hsdpa antenna lte antenna matching network 3G HSDPA circuits WP090202 quadrature modulation two front end 3g amplifier
    Text: AN RFMD WHITE PAPER RFMD. ® 3G/4G Multimode Cellular Front End Challenges Part 3: Impact on Power Amplifier Design Kevin Walsh and Jackie Johnson Key Concepts Discussed: • Power amplifier background. • Low Power Mode versus DC-DC converters: impact on battery current.


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    PDF WP090202 DG09 4G LTE PA 3G HSDPA LTE rf front end hsdpa antenna lte antenna matching network 3G HSDPA circuits WP090202 quadrature modulation two front end 3g amplifier

    RF5607

    Abstract: RFMD PA LTE
    Text: RF5607 RF56075V, 1.9 GHz TO 2.7 GHz LINEAR POWER AMPLIFIER 5V, 1.9 GHZ TO 2.7 GHZ LINEAR POWER AMPLIFIER VCC1 N/C VCC2 VCC2 Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm 16 15 14 13 BIAS VCC 1 12 RF OUT Features  23dBm LTE linear output power  Gain step capability


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    PDF RF56075V, RF5607 16-Pin, 23dBm RF5607 2110MHz 2140MHz 2170MHz RFMD PA LTE

    Integrated Synthesizers with Mixers

    Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
    Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services


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    PDF 11F-B, Integrated Synthesizers with Mixers Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers