RFP18N10* Search Results
RFP18N10* Price and Stock
General Electric Company RFP18N10POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 100V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
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RFP18N10 | 151 |
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Others RFP18N10INSTOCK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RFP18N10 | 275 |
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RFP18N10* Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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RFP18N10 |
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18A, 80V and 100V, 0.100 ?, N-Channel Power MOSFETs | Original | |||
RFP18N10 |
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Power MOSFETs Cross Reference Guide | Original | |||
RFP18N10 |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 18A. | Scan | |||
RFP18N10 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | |||
RFP18N10 | International Rectifier | RF and BUZ Series Power MOSFETs - N-Channel | Scan | |||
RFP18N10 | Unknown | Shortform Datasheet & Cross References Data | Short Form | |||
RFP18N10 | Unknown | Semiconductor Master Cross Reference Guide | Scan | |||
RFP18N10 | Unknown | Shortform Data and Cross References (Misc Datasheets) | Short Form |