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    RGS 14 Search Results

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    RGS 14 Price and Stock

    Infineon Technologies AG IRGS14C40L

    IGBT 430V 20A 125W D2PAK
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    DigiKey IRGS14C40L Tube 200
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    Infineon Technologies AG IRGS14C40LPBF

    IGBT 430V 20A D2PAK
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    Infineon Technologies AG IRGS14C40LTRLP

    IGBT 430V 20A TO263AB
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    DigiKey IRGS14C40LTRLP Reel
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    IRGS14C40LTRLP Digi-Reel 1
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    Win Source Electronics IRGS14C40LTRLP 5,483
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    Essentra Components RGS2-12462

    Grommets & Bushings Grommet Sleeve,Black
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    Mouser Electronics RGS2-12462 5,174
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    Essentra Components RGS1-60466

    Grommets & Bushings Grommet Sleeve,Black
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    Mouser Electronics RGS1-60466 702
    • 1 $0.86
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    Find more RGS 14 price and stock on Findchips.com

    RGS 14 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TPT-81A

    Abstract: ITS-700 ACTTA-100A 8002 1030 Aeroflex RGS 2000
    Text: Avionics RGS 2000 TCAS REPLY GENERATOR Your complete RF source for the testing of TCAS computers The RGS 2000 TCAS Reply Generator is a self-contained RF Test Station designed to be a complete RF resource for the testing of TCAS Traffic Alert and Collision Avoidance


    Original     		PDF

    varistor 1049

    Abstract: RGS1A60D50KKEH51 RGS1A23D25KKEDIN RGS1A60D25KKE RGS1A23D50KKE varistor 471 2kv
    Text: Solid State Relays Zero Switching Types RGS.E, RGS.EDIN • • • • • • • • • • • • • 17.5mm width Rated Operational voltage: Up to 600Vrms Rated Operational current: Up to 90Arms Up to 6600A²s for I²t Control voltages: 3-32 VDC, 20-275 VAC 24-190VDC


    Original     		PDF 600Vrms 90Arms 24-190VDC) IEC/EN60947-4-2, IEC/EN60947-4-3, IEC/EN62314, UL508, CSA22 M5x23mm, RGM25 varistor 1049 RGS1A60D50KKEH51 RGS1A23D25KKEDIN RGS1A60D25KKE RGS1A23D50KKE varistor 471 2kv

    Untitled

    Abstract: No abstract text available
    Text: NTE2384 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		PDF NTE2384

    NTE2387

    Abstract: No abstract text available
    Text: NTE2387 MOSFET N–Channel Enhancement Mode, High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Drain–Gate Voltage RGS = 20kΩ , VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V


    Original     		PDF NTE2387 NTE2387

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFN 140N20P Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Fast Intrinsic Diode trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 140N20P

    IXTK140N20P

    Abstract: N-channel enhancement 70A
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 140N20P VDSS ID25 RDS on = 200 V = 140 A Ω = 18 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 140N20P O-264 IXTK140N20P N-channel enhancement 70A

    140n10

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 140N10P O-268 065B1 728B1 123B1 728B1 140n10

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2

    44N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 44N50P 405B2 44N50P

    ixtk140n30p

    Abstract: 250nsNOTE
    Text: Preliminary Technical Information PolarTM Power MOSFET IXTK140N30P VDSS ID25 = 300V = 140A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTK140N30P O-264 140N30P 5-13-08-B ixtk140n30p 250nsNOTE

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


    Original     		PDF 2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTK140N30P = 300V = 140A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXTK) Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTK140N30P O-264 140N30P 5-13-08-B

    ixfn 140n30p

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original     		PDF 140N30P OT-227 E153432 IXFN140N30P ixfn 140n30p

    Untitled

    Abstract: No abstract text available
    Text: IXTH 14N100 VDSS MegaMOSTMFET ID25 RDS on = 1000 V = 14 A = 0.82 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30


    Original     		PDF 14N100 O-247

    MPC8358

    Abstract: FE2A "PPTP"
    Text: Freescale Semiconductor Quick Start Guide Document Number: VQSSOHOQGS Rev. 0, 06/2009 VortiQa Software for SOHO/Residential Gateways on MPC8358 Quick Start Guide 1 Introduction Contents This document describes VortiQa RGS feature overview and steps to install fuse and bring-up


    Original     		PDF MPC8358 MPC8358 FE2A "PPTP"

    4525G

    Abstract: 140N30P
    Text: VDSS ID25 PolarHVTM HiPerFET IXFK 140N30P IXFX 140N30P Power MOSFET RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSM VGSM Transient


    Original     		PDF 140N30P O-264 PLUS247 140N30P 4525G

    Untitled

    Abstract: No abstract text available
    Text: IXTQ44N50P PolarTM Power MOSFET VDSS ID25 RDS on = 500V = 44A   140m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P G D Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXTQ44N50P Tab100 44N50P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA80N10T7 RDS on = 100 V = 80 A Ω ≤ 14 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTA80N10T7 80N10T

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


    Original     		PDF 140N10P

    140N1

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


    Original     		PDF 140N10P 140N1

    ixfn 140n30p

    Abstract: sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16
    Text: Preliminary Technical Information PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 140N30P 405B2 ixfn 140n30p sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16

    2N3819 fet

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		PDF 2N7002LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N3819 fet BC237

    Untitled

    Abstract: No abstract text available
    Text: TrenchMVTM Power MOSFET VDSS ID25 IXTA80N10T IXTP80N10T RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ 100V 80A 14mΩ Ω TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXTA80N10T IXTP80N10T O-263 80N10T 2-11-07-A

    VN0610LL

    Abstract: No abstract text available
    Text: ON Semiconductort FET Transistor VN0610LL N–Channel — Enhancement MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)


    Original     		PDF VN0610LL 226AA) r14525 VN0610LL/D VN0610LL