RJK0389DPA Search Results

RJK0389DPA Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK0389DPA-00#J53		Renesas Electronics Corporation	N Channel Power MOSFET

RJK0389DPA Price and Stock

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Rochester Electronics LLC RJK0389DPA-WS-J53 POWER TRANSISTOR, MOSFET
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DigiKey	RJK0389DPA-WS-J53	Bulk			115	1 - 10 - 100 - 1000 $2.62 10000 $2.62	Buy Now
Renesas Electronics Corporation RJK0389DPA-WS#J53 RJK0389DPA-WS#J53
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Verical	RJK0389DPA-WS#J53		2,191		127	1 - 10 - 100 - 1000 $2.675 10000 $2.675	Buy Now
Rochester Electronics	RJK0389DPA-WS#J53		2,191		1	1 $2.52 10 $2.52 100 $2.37 1000 $2.14 10000 $2.14	Buy Now

RJK0389DPA Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK0389DPA		Renesas Technology	MOSFET, Switching; VDSS (V): 30/ 30; ID (A): 15/20; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0082/0.0068; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0118/0.0105]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 880/ 1000; toff ( us) typ: -; Package: WPAK		Original	PDF
RJK0389DPA		Renesas Technology	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching		Original	PDF
RJK0389DPA-00#J53		Renesas Electronics	FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V 20A WPAK		Original	PDF
RJK0389DPA-00-J0		Renesas Technology	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching		Original	PDF

RJK0389DPA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0300 Rev.3.00 Dec 03, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline	Original	PDF	RJK0389DPA REJ03G1722-0300 PWSN0008DD-A
PWSN0008DD-A Abstract: RJK0389DPA-00-J53 RJK0389DPA RJK0389DPA00J53 Text: Preliminary RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0400 High Speed Power Switching Rev.4.00 Sep 29, 2009 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free	Original	PDF	RJK0389DPA REJ03G1722-0400 PWSN0008DD-A PWSN0008DD-A RJK0389DPA-00-J53 RJK0389DPA RJK0389DPA00J53
RJK0389DPA Abstract: No abstract text available Text: Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features •     Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free	Original	PDF	RJK0389DPA REJ03G1722-0410 PWSN0008DD-A current9044 RJK0389DPA
PWSN0008DD-A Abstract: RJK0389DPA RJK0389DPA-00-J0 MOS2 Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0102 Preliminary Rev.1.02 Jul 25, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free	Original	PDF	RJK0389DPA REJ03G1722-0102 PWSN0008DD-A RJK0389DPA RJK0389DPA-00-J0 MOS2
Untitled Abstract: No abstract text available Text: RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1722-0101 Preliminary Rev.1.01 Jul 10, 2008 Features • • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free	Original	PDF	RJK0389DPA REJ03G1722-0101
MOS2 Abstract: PWSN0008DD-A RJK0389DPA RJK0389DPA00J53 Text: Preliminary Datasheet RJK0389DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1722-0410 High Speed Power Switching Rev.4.10 May 13, 2010 Features •     Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free	Original	PDF	RJK0389DPA REJ03G1722-0410 PWSN0008DD-A MOS2 PWSN0008DD-A RJK0389DPA RJK0389DPA00J53
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	PDF	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
HAT1128R Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB Text: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response	Original	PDF	RJK0305DPB RJK0331DPB) HAT2188WP RJK2055DPA RJK2057DPA HAT2191WP HAT2192WP HAT2193WP RJK2555DPA RJK2557DPA HAT1128R RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
rjh60f5 Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.	Original	PDF	REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
R2J24020F Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 Text: 2009.07 ルネサス電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体の炭素使用量を減らし地球の温暖化を防ぐことができます。電気は主に発電所で作られ、高電圧のACで送電されること	Original	PDF	RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114