RJK03N4DPA Search Results

RJK03N4DPA Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK03N4DPA-02#J5A		Renesas Electronics Corporation	Built In Sbd N Channel Power MOSFET, WPAK(3F), /Embossed Tape
RJK03N4DPA-00#J5A		Renesas Electronics Corporation	Built In Sbd N Channel Power MOSFET

RJK03N4DPA Price and Stock

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Rochester Electronics LLC RJK03N4DPA-02-J5A N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK03N4DPA-02-J5A	Bulk			369	1 - 10 - 100 - 1000 $0.81 10000 $0.81	Buy Now
Renesas Electronics Corporation RJK03N4DPA-02#J5A Silicon N Channel Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJK03N4DPA-02#J5A		429,000		408	1 - 10 - 100 - 1000 $0.8313 10000 $0.8313	Buy Now
Rochester Electronics	RJK03N4DPA-02#J5A		429,000		1	1 $0.7824 10 $0.7824 100 $0.7355 1000 $0.665 10000 $0.665	Buy Now

RJK03N4DPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK03N4DPA-00#J5A		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 45A WPAK		Original	PDF

RJK03N4DPA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03N4DPA 30V, 45A, 2.4mΩmax. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0785EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current	Original	PDF	RJK03N4DPA R07DS0785EJ0200 PWSN0008DE-A
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03N4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0785EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	PDF	RJK03N4DPA R07DS0785EJ0110 PWSN0008DC-B
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03N4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0785EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	PDF	RJK03N4DPA R07DS0785EJ0110 PWSN0008DC-B
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1