RJK0655DPB Search Results

RJK0655DPB Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK0655DPB-00#J5		Renesas Electronics Corporation	Nch Single Power Mosfet 60V 35A 6.7Mohm Lfpak

RJK0655DPB Price and Stock

Filter by Manufacturer


Renesas Electronics Corporation RJK0655DPB-00-J5 MOSFET N-CH 60V 35A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0655DPB-00-J5	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.13	Buy Now
	RJK0655DPB-00-J5	Cut Tape			1	1 $2.9 10 $2.9 100 $2.9 1000 $2.9 10000 $2.9	Buy Now
	RJK0655DPB-00-J5	Digi-Reel			1	1 $2.9 10 $2.9 100 $2.9 1000 $2.9 10000 $2.9	Buy Now
Avnet Americas	RJK0655DPB-00-J5	Reel		18 Weeks	2,500	1 $1.205 10 $1.205 100 $1.205 1000 $1.205 10000 $1.205	Buy Now
Avnet Asia	RJK0655DPB-00-J5			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJK0655DPB-00#J5 MOSFETs Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RJK0655DPB-00#J5		5,548			1 $2.68 10 $2.23 100 $1.78 1000 $1.27 10000 $1.16	Buy Now
Newark	RJK0655DPB-00#J5	Cut Tape	128		1	1 $2.79 10 $2.32 100 $1.85 1000 $1.32 10000 $1.32	Buy Now
Avnet Silica	RJK0655DPB-00#J5			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	RJK0655DPB-00#J5		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics America	RJK0655DPB-00#J5	Tape & Reel (TR)	2,500		1	1 $2.9 10 $2.9 100 $2.9 1000 $2.9 10000 $1.13	Buy Now

RJK0655DPB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK0655DPB-00#J5		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK		Original	PDF

RJK0655DPB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJK0655DPB Abstract: No abstract text available Text: Preliminary RJK0655DPB Silicon N Channel Power MOS FET Power Switching REJ03G1881-0100 Rev.1.00 Nov 17, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 5.3 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0655DPB REJ03G1881-0100 PTZZ0005DA-A RJK0655DPB
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0655DPB 60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching R07DS1053EJ0200 Previous: REJ03G1881-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V)	Original	PDF	RJK0655DPB R07DS1053EJ0200 REJ03G1881-0100) PTZZ0005DA-A
RJK0655DPB Abstract: No abstract text available Text: Preliminary RJK0655DPB Silicon N Channel Power MOS FET Power Switching REJ03G1881-0100 Rev.1.00 Nov 17, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 5.3 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0655DPB REJ03G1881-0100 PTZZ0005DA-A RJK0655DPB
RJK0655DPB Abstract: No abstract text available Text: Preliminary RJK0655DPB Silicon N Channel Power MOS FET Power Switching REJ03G1881-0100 Rev.1.00 Nov 17, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 5.3 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0655DPB REJ03G1881-0100 PTZZ0005DA-A RJK0655DPB
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	PDF	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
SC100 Abstract: RJK0655DPB Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
rjh60f5 Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.	Original	PDF	REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
HAT1125H Abstract: ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L Text: High performance PowerMOSFET for low voltage industrial and consumer applications www.renesas.eu 2010.09 To meet future design demands for high performance cost and space reductions the high performance PowerMOSFET provide design engineers with a head start. A wide voltage range VDSS = 12V.250V of high efficient	Original	PDF	uPA27xxUT1A R07PF0002ED0100 HAT1125H ff 0401 HAT2270H LFPAK footprint Renesas rjk305 uPA2749UT1A RJK03C1DPB RJK305DPB UPA2802T1L UPA2807T1L