RJK0658DPA Search Results

RJK0658DPA Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK0658DPA-00#J5A		Renesas Electronics Corporation	Nch Single Power Mosfet 60V 25A 11.1Mohm Wpak

RJK0658DPA Price and Stock

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Renesas Electronics Corporation RJK0658DPA-00-J5A MOSFET N-CH 60V 25A 8WPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK0658DPA-00-J5A	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.93	Buy Now
	RJK0658DPA-00-J5A	Cut Tape			1	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $2.5	Buy Now
	RJK0658DPA-00-J5A	Digi-Reel			1	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $2.5	Buy Now
Renesas Electronics Corporation RJK0658DPA-00#J5A POWER MOSFET - Tape and Reel (Alt: RJK0658DPA-00#J5A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RJK0658DPA-00#J5A	Reel		18 Weeks	3,000	1 $0.992 10 $0.992 100 $0.992 1000 $0.992 10000 $0.992	Buy Now
Mouser Electronics	RJK0658DPA-00#J5A					1 - 10 - 100 - 1000 - 10000 $0.93	Get Quote
Renesas Electronics America	RJK0658DPA-00#J5A	Tape & Reel (TR)	6,000		1	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $0.93	Buy Now

RJK0658DPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK0658DPA-00#J5A		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A WPAK		Original	PDF

RJK0658DPA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0658DPA R07DS0344EJ0100 PWSN0008DC-B
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V)	Original	PDF	RJK0658DPA R07DS0344EJ0100 PWSN0008DC-B
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK0658DPA 60V, 25A, 11.1mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance	Original	PDF	RJK0658DPA R07DS0344EJ0300 PWSN0008DE-A
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	PDF	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1