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    RJP 30 Search Results

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    RJP 30 Price and Stock

    Rochester Electronics LLC RJP30E3DPP-M0-T2

    IGBT
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    DigiKey RJP30E3DPP-M0-T2 Bulk 98
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    Rochester Electronics LLC RJP30E3DPK-M2-T0

    IGBT
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    DigiKey RJP30E3DPK-M2-T0 Bulk 28
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    Rochester Electronics LLC RJP30H1DPD-A0-Q2

    IGBT
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    DigiKey RJP30H1DPD-A0-Q2 Bulk 204
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    Rochester Electronics LLC RJP3034DPP-90-T2F

    HIGH SPEED IGBT
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    DigiKey RJP3034DPP-90-T2F Bulk 136
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    Rochester Electronics LLC RJP30E4DPE-00-J3

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    DigiKey RJP30E4DPE-00-J3 Bulk 107
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    RJP 30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ARPL

    Abstract: ARPL-3W 3000mW
    Text: ARPL-3W Yellow 140° Features • Highest flux per LED family in the world • Very long operating life (up to 100k hours) • Available in Yellow • Lambertian radiation pattern • More energy efficient than incandescent and most halogen lamps • Low voltage DC operated


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    PDF 100ns 10msec duty1/10 ARPL ARPL-3W 3000mW

    TEXAS INSTRUMENTS, Mold Compound QFN

    Abstract: TPS74401 qfn jc jb RJP 63 SBVA025
    Text: Application Report SBVA025 – December 2009 Using New Thermal Metrics Masashi Nogawa . Linear Power Management Products ABSTRACT Several TI power management ICs, such as the TPS742xx, TPS743xx, and TPS744xx series of linear


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    PDF SBVA025 TPS742xx, TPS743xx, TPS744xx SPRA953) TEXAS INSTRUMENTS, Mold Compound QFN TPS74401 qfn jc jb RJP 63 SBVA025

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER FYLP FYLP- 0.5W 0.5W-UW Features: Long operating life Highest flux Available in White Lambertian radiation pattern More energy efficient than incandescent and most halogen lamps Low voltage DC operated Cool beam,safe to the touch Instant light less than 100ns


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    PDF 100ns) Width10 duty1/10

    LTN20069

    Abstract: transistor RJp AN110 LTM4601
    Text: Application Note 110 May 2007 LTM4601 DC/DC µModuleTM Thermal Performance Eddie Beville, Jian Yin INTRODUCTION analyzed for a worse case temperature rise due to the relatively lower efficiency exhibited in these higher input voltage designs. The LTM4601 DC/DC Module is a complete high power


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    PDF LTM4601 1000SF LTN20069 an110f AN110-8 LTN20069 transistor RJp AN110

    Untitled

    Abstract: No abstract text available
    Text: DO NOT SCALE DATE 9 .2 0 B /F TYP-4 PLCS A £ SYM REVISION RECORD AUTH DR CK 14MY97 A WAS PE060525 & RELEASED 970005 RJP RJP 24JN97 B SEAL CHECK HOLE ADDED 1B 1275 RJP JAK 30SE97 C REVISED 181972 JHV PYP 30SE97 D REVISED 183212 JHV PYP 06MY98 E REVISED GRAPHICS


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    PDF 14MY97 PE060525 24JN97 30SE97 06MY98 14MY97 21MY97

    1J4B41

    Abstract: TA7510S
    Text: TOSHIBA TA7510S TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA751OS EARTH LEAK BREAKER FEATURES • High Sensibility : V j rjp = 7mV Typ. • Compose of Toshiba Original SIP (7Pin) so that it is possible to manufacture very small Earth Leak Breaker by


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    PDF TA7510S TA751OS 961001EBA2 98TYP 1J4B41 TA7510S

    Untitled

    Abstract: No abstract text available
    Text: 00 NOT SCALE ti1 —•1— vO 7 7 m _ LL_ DATE SYM REVISION RECORD AUTH DR CK Z7AP9S A RELEASED 9B0005 RJP JAK 0ZN005 A1 OBSOLETE Z7357B RTV FR0 m i rn fc Lfl SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL C ~ DOES NOT REQUIRE INSPECTION.


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    PDF 9B0005 0ZN005 Z7357B 444B6 Z7AP98 05JN98

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TA7510S TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA751OS EARTH LEAK BREAKER FEATURES • High Sensibility : V j rjp = 7mV Typ. • Compose of Toshiba Original SIP (7Pin) so that it is possible to manufacture very small Earth Leak Breaker by


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    PDF TA7510S TA751OS 961001EBA2 98TYP

    Untitled

    Abstract: No abstract text available
    Text: " 4 i - \ m . * •V F f H i 1 f t ■ « 3 1I Features • rjp ii R 3 I ClEROFLEX Cl RCUIT TECHNOLOGY www.aeroflex.com/act1 .htm Smaller Case Outline then ACT4487D General Description • +5 / ±15 Volt Supply Operation T h e A e ro fle x C ircuit Technology


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    PDF ACT4487D MIL-STD-1553 MIL-STD-883 MIL-PRF-38534 -1553A/B ACT4436DF THE-1553 T4436

    1N4007W

    Abstract: IN4001W
    Text: haut fWILl SURFACE MOUNT RECTIFIERS mnnn TYPE Maximum Average Rectified Current Maximum Forward Maximum Reverse Peak Surge Current : : s# íW áMtóvéii?v; Resistive Load i |:?î ; ; ^; ; : r Superimposed ’u l U i t l l l l i t S t i li li ! Maximum "H.: rjPÄi H


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    PDF PASSIVATED/DL-41 DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 DL4007 AMPEFIE005W IN4006W 1N4007W IN4001W

    TA7510S

    Abstract: No abstract text available
    Text: TOSHIBA TA7510S TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT t• m a m 7m smr w m■ < SILICON MONOLITHIC ;v EARTH LEAK BREAKER FEATURES • High Sensibility : V j rjp= 7m V Typ. • Compose of Toshiba Original SIP (7Pin) so that it is possible to manufacture very small Earth Leak Breaker by


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    PDF TA7510S 961001EBA2 11111---------e TA7510S

    cen-u45

    Abstract: RJP 30 D40N 2N6558 RJP 35
    Text: Power Transistors TO-202 Case TYPE NO. NPN RJP ic PD A> <W MAX BVCBO BVCEO @ Ic hFE (V) (V) MIN MIN MM MAX (mA) VCE(SAT) IC (A) (V) MAX tr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2,0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


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    PDF O-202 2N6548 2N6549 2N6551 2N6552 2N6553 2N6557 2N6558 2N6559 2N6591 cen-u45 RJP 30 D40N RJP 35

    xrt5620

    Abstract: No abstract text available
    Text: Z * EXAR XR-T5640 PCM AMI Line Receiver and Clock Recovery Circuit FU N C T IO N A L BLOCK DIAGRAM G EN E R A L DESCRIPTION The XR-T5640 is a m o nolithic b ip o la rjp designed for T1 type line receiver application oj3erating at 1.544 M bit/s. It provides all the active c irc u itry required to perform


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    PDF XR-T5640 XR-T5740. XR-T5640 xrt5620

    my62256b

    Abstract: No abstract text available
    Text: « H Y U N D A I H Y ,6J 5 h6 , B rCMOS M? f rjp e» u _ 32K 2x »8-bit SRAM PRELIMINARY DESCRIPTION The HY62256B is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY62256B 1DC04-11-MAY94 HY62256BP HY62256BLP HY62256BLLP HY62256BJ HY62256BU HY62256BLU my62256b

    Untitled

    Abstract: No abstract text available
    Text: SYMBOL D E F I N I T I O N D O' LP nn THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER DATE M IS S IN G NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 9 LAST NO. USED 9 SYM REVISION RECORD AUTH DR CK


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    PDF 29MY98 PE069426 12N09B 080C9B 080C98 27AU98 29MY98 06JL98 28AU98

    Untitled

    Abstract: No abstract text available
    Text: 6 7 5 4 ï SYMBOL D E F I N I T I O N THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR TH IS DRAWING/PART NUMBER F un M IS S IN G TO TAL NO. OF SYMBOLS ON DRAWING 11 LA S T NO. USED 23 2 3 NUMBERS DWG STATUS DATE STG REV CHG N/P


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    PDF 11DE98 29MR99 18JN99 24JA02 R0071754 04JA99

    Untitled

    Abstract: No abstract text available
    Text: 20 19 18 17 16 Ï 15 14 13 12 1 1 10 9 8 6 7 Ï 5 4 3 SYMBOL D E F I N I T I O N THE NUMBER INSIDE THE SYMBOL CD CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER 2 DWG STATUS M ISS IN G NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING


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    PDF 26FE99 20MY99 17JA00 28AP00

    Untitled

    Abstract: No abstract text available
    Text: 16 15 14 13 12 9 10 1 1 Ï 7 8 5 6 4 SYMBOL D E F I N I T I O N THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER 3 M IS S IN G NUMBERS TOTAL NO. OF SYMBOLS ON DRAWING 20 LAST NO. USED 199 7 3 ,1 7 9 ,


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    PDF 09JL98 PE066353 01N099 26AP00 02JN00

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 30FWJ2C48M,U30FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30FWJ2C48M, U30FWJ2C48M LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage


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    PDF 30FWJ2C48M U30FWJ2C48M 30FWJ2C48M, U30FWJ2C48M Zo-76

    U1FWJ44N

    Abstract: No abstract text available
    Text: TO SHIBA U1FWJ44N TOSHIBA 5CHOTTKY BARRIER RECTIFIER SCH OTT KY BARRIER TYPE IJ 1 F W I d d N Unit in mm HIGH SPEED RECTIFIER APPLICATIONS a Low Forward Voltage ; Vjr'jy'j = Q.37V Max. • Average Forward Current :I f (A V ) = 1-0A • Repetitive Peak Reverse Voltage : V j^jyj = 30V


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    PDF U1FWJ44N U1FWJ44N

    transistor RJp 30

    Abstract: RJP3 transistor RJp 2Ghz mixer
    Text: Tem ic U 2795 B-FP TELEFUNKEN Semiconductors 2-GHz Double Balanced Mixer Description U 2795 B is a 2-GHz mixer for R F telecom munications equipm ent, e.g. D E C T and PCN, built with T E L E FU N K E N ’s advanced bipolar technology. A double balanced approach was chosen to assure


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    PDF D-74025 transistor RJp 30 RJP3 transistor RJp 2Ghz mixer

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 30GWJ2CZ47C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 3nr;\A/ \ J C 7 d i r SWITCHING TYPE PO W ER SUPPLY APPLICATON U nit in mm CONVERTER & CHOPPER APPLICATION • • • .10.3MAX. . 0 3 2 + 0.2 Repetitive Peak Reverse Voltage


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    PDF 30GWJ2CZ47C

    STK465

    Abstract: SANSUI SANSUI RP-25 4016 ic ic 4016 sansui amplifier transformer CI 4016 12mVRMS STK46 STK-465
    Text: SANYO No. C670A S T K 4 6 5 ^ jjj^ Thick Film Hybrid IC 30H min. 2-channel AF poy^ar am p lifie r 2 power supplies 4016 4 f NNW Maximum Ratings at Maximum S u p p ly V o lta g e V^^max O p e ra tin g Case T e m p e ra tu re Tc S to ra g e T e m p e ra tu re


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    PDF C670A STK465 STK465 SANSUI SANSUI RP-25 4016 ic ic 4016 sansui amplifier transformer CI 4016 12mVRMS STK46 STK-465

    RJP 30 h1

    Abstract: RJP 63
    Text: TRANSFORMER DISCONNECT daykin GENERAL PURPOSE GPFS SERIES - ELECTRIC CORPORATION TRANSFORMER DISCONNECT The Daykin GPFS Series is a NEMA 12 enclosed transform er disconnect suitable for m ounting on the outside of an electrical control panel. This enclosure has provisions for base or side m ounting.


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