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    RJU60C2SDPD Search Results

    RJU60C2SDPD Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJU60C2SDPD-E0#J2 Renesas Electronics Corporation Fast Recovery Diodes, TO-252, /Embossed Tape Visit Renesas Electronics Corporation
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    RJU60C2SDPD Price and Stock

    Renesas Electronics Corporation RJU60C2SDPD-E0-J2

    DIODE GEN PURP 600V 5A TO252
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    DigiKey RJU60C2SDPD-E0-J2 Reel
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    Rochester Electronics LLC RJU60C2SDPD-E0-J2

    DIODE GEN PURP 600V 5A TO252
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    DigiKey RJU60C2SDPD-E0-J2 Bulk 208
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    Renesas Electronics Corporation RJU60C2SDPD-E0#J2

    Rectifier Diode Switching 600V 5A 70ns 3-Pin(2+Tab) TO-252 T/R
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    Verical RJU60C2SDPD-E0#J2 15,000 230
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    RJU60C2SDPD-E0#J2 3,000 230
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    Rochester Electronics RJU60C2SDPD-E0#J2 18,000 1
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    RJU60C2SDPD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJU60C2SDPD-E0#J2 Renesas Electronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST RECOVERY TO-252 Original PDF

    RJU60C2SDPD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU60C2SDPD Single Diode Fast Recovery Diode R07DS0373EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 70 ns typ. at IF = 5 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)


    Original     		RJU60C2SDPD R07DS0373EJ0100 PRSS0004ZJ-A O-252) 60ctronics PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU60C2SDPD Single Diode Fast Recovery Diode R07DS0373EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 70 ns typ. at IF = 5 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 15 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)


    Original     		RJU60C2SDPD R07DS0373EJ0100 PRSS0004ZJ-A O-252) PDF

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 PDF

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
    Text: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output


    Original     		RJS6005TDPP; 0212/100/in-house/LAH/JE SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0 PDF