rlz 34 n
Abstract: RLZ36B
Text: RLZ36B Diodes Zener diode RLZ36B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)
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RLZ36B
LL-34
TE-11
rlz 34 n
RLZ36B
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RLZ TE-11 7.5B
Abstract: RLZ33B rlz diode rohm rlz te -11-20A ll-34 diode
Text: RLZ33B Diodes Zener diode RLZ33B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)
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RLZ33B
LL-34
TE-11
RLZ TE-11 7.5B
RLZ33B
rlz diode rohm
rlz te -11-20A
ll-34 diode
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RLZ TE-11 7.5B
Abstract: RLZ30B
Text: RLZ30B Diodes Zener diode RLZ30B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)
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RLZ30B
LL-34
TE-11
RLZ TE-11 7.5B
RLZ30B
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RLZ39B
Abstract: No abstract text available
Text: RLZ39B Diodes Zener diode RLZ39B zApplications Voltage regulation zExternal dimensions Unit : mm (第１色帯) CATHODE BAND (1st COLOR BAND) (2nd COLOR BAND) (第２色帯) (3rd(第３色帯) COLOR BAND) 0.4 0.4 φ1.4±0.1 zFeatures 1) Grass seald envelope. (LLDS)
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RLZ39B
LL-34
TE-11
RLZ39B
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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455bk
Abstract: 80386 PD6600A U10454E
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PD63
Abstract: PD64 PD6600A UPD6600
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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200H
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD67, 68, 69 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 2.0 V low-voltage operation, carrier generator for infrared remote control transmission, standby release function through key input, and programmable timer, the µPD67, 68, and 69 are ideal for infrared remote control
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68b resistor code
Abstract: ASR10 PC10 PD6600A
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD67B, 68B 4-BIT SINGLE-CHIP MICROCONTROLLERS FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION With their 1.65 V low-voltage operation, carrier generator for infrared remote control transmission, standby release function through key input, and programmable timer, the µPD67B and 68B are ideal for infrared remote
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PD67B,
PD67B
PD67B:
PD68B:
68b resistor code
ASR10
PC10
PD6600A
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Untitled
Abstract: No abstract text available
Text: K/Diodes RLZ J RLZ J Series Series y V =1 > 1 y 400mW 3È Œ' ; - K Silicon Epitaxial Planar 400mW Zener Leadless Diodes K * ^HK’+äsH /D im ensions Unit : mm • $ £ 1) /J 'S H * S 6 * < : / ? * $ (LL-34)„ 2) i l l • Features 1) Small surface mount type (LL-34).
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400mW
LL-34)
D0107b7
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1SS134 ROHM
Abstract: ROHM 1SS292 1SS139
Text: $ < K /D io d es M 3 . -f y ^ > *7 $ - i $ — K /S w itc h in g Diodes • S & J f X 'f K /H ig h - S p e e d S w itching Diodes m Type B E S S IE Vr V i1 EE Cond. V f (V) Max. I f (mA) Package Page 1S2471 80 1.2 100 D O -35/S C -40 1187 1S2472 50 1.2 100
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1S2471
-35/S
1S2472
1S2473
1S2787
1SS41
1SS130
DO-34
1SS134 ROHM
ROHM 1SS292
1SS139
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Untitled
Abstract: No abstract text available
Text: FUJI SU 256K X 8 CMOS SRAM MODULE MB85403A-40 MB85W3A-50 T S 2 6 1 -A 8 8 Y N o v . 1988 CMOS 262,144 Words x 8-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85403A is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 44-pin ceramic board.
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MB85403A-40
MB85W3A-50
MB85403A
MB81C81A
44-pin
MB85403
MB81C81A,
MB85403A-40)
MB85403A-50)
HB854-03A-40
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17-18L
Abstract: No abstract text available
Text: 36 TO 9 BIFIFO IDT 7MB2002 FEATURES: DESCRIPTION: • First-in/Flrst-out memory module This module is a FIFO that has up to 8 IDT72041S 4K x 9 on board. The module is bidirectional with 4K x 36 transforming to 16K x 9 on one side and back to 4K x 36 on the other side. All logic nec
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7MB2002
36-bit
IDT72041S
IDT7MB2002
S13-91
17-18L
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1SR35-100
Abstract: 1SR139-100
Text: UJHOil VLU “ 4 - S 0 E f2 c S3” £,St<*t3s2>'£ ‘ T l^X D ^V —* C. tjLA —(\ : l o O o a o Q ;j ! i <; ' 1 ( . () () f; ;j •; : ) i'i () <i ( ) ( ) <) () { ) <> () { ; ( > Cj (; I ! o r •Q o o o siaioi-zn sauas r ZilOl 0Z~0ZZ±IAI 262SSI
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262SSI
06ZSS1
00s00s0
1SR35-100
1SR139-100
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Untitled
Abstract: No abstract text available
Text: Q Q u a l it y S e m ic o n d u c t o r , I n c . Low Skew Clock Driver/ Buffer for Desktop PC w it h 4 DIM M S q s s s is advance INFORMATION FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS5818 is a high speed, low noise 1 - 1 8 non
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QS5818
100MHz.
MDSC-00039-02
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Untitled
Abstract: No abstract text available
Text: !. f WS512K32-XCJC WHITE /M ICROELECTRONICS 512Kx32 SRAM MODULE p r e l im in a r y * FEATURES • A c c e s s T im e s o f 17, 2 0 , 2 5 , 3 5 a nd 4 5 n s ■ TTL C o m p a t ib l e In puts a nd C M O S O u tp u ts ■ 6 8 - l e a d , JLCC, P a c k a g e 701
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WS512K32-XCJC
512Kx32
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Untitled
Abstract: No abstract text available
Text: A N A LO G Four-Channel 12-Bit Sampling A/D Converter D E V IC E S _ for Digital Signal Processing □ _ADI334 1.1 Scope. This specification covers the detail requirements for a hybrid, 12-bit analog-to-digital converter including
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12-Bit
ADI334
AD1334TD/883B
ADI-H-1000:
DH-40A.
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: 67C4502-35/50/65/80 Deep First-in First-out FIFO 1024x9 C M O S Memory a o> O .u cn DISTINCTIVE CHARACTERISTICS Retransmit capability Expandable in both width an djtepth Increased noise immunity for XI • CMOS threshold Functional and pin compatible with industry
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67C4502-35/50/65/80
1024x9
67C4502
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Untitled
Abstract: No abstract text available
Text: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN511662
16bit
NN511662L
00Q153fl
NNS11662
NN511662XX
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D1S34
Abstract: No abstract text available
Text: S IE M E N S 3.3 V SDRAM Modules HYS 64Vx00 2 0G(C)D(L)-8/-10 144 pin SO-DIMM SDRAM Modules 32MB, 64MB & 128MB density • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-Line Synchronous DRAM Modules for PC notebook applications • One bank 4M x 64, 8M x 64 and 16M x 64 non-parity module organization
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128MB
64Vx00
L-DIM-144-C6
L-DIM-144-C7
fl235bD5
D1S34
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26LS32 ic internal diagram
Abstract: 05393-001B AM26LS33PC 5962-7802001
Text: Am26LS32/Am26LS33 Advanced Micro Devices Quad Differential Line Receivers DISTINCTIVE CHARACTERISTICS • Input voltage range of 15 V differential or common mode on Am26LS33; 7 V (differential or common mode) on Am26LS32 ■ The Am26LS32 meets all the requirements of
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Am26LS32/Am26LS33
Am26LS33
Am26LS32
RS-422
RS-423
26LS32
26LS32
26LS32 ic internal diagram
05393-001B
AM26LS33PC
5962-7802001
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nn514405
Abstract: No abstract text available
Text: NN514405 / NN514405B series EDO Hyper Page Mode CMOS 1M x 4bit Dynamic RAM NPN>a( DESCRIPTION The NN514405/B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4-bits. The NN514405/B series is fabricated with advanced CMOS technology and de
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NN514405
NN514405B
NN514405/B
NN514405L/BL
NN514405/
128ms
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HOA4 Package
Abstract: HOA4 T 3512 H 67 diode 2b351
Text: 16-BIT 2:1 MUX/DEMUX SW ITCH IDT74FST163233 ADVANCE INFORMATION Integrated Device Technology, Inc. their own while providing a low resistance path for an external driver. These devices connect input and output ports through an n-channel FET. When the gate-to-source junction of this
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16-BIT
IDT74FST163233
FST163xxx
IL-STD-883,
200pF,
FST163233
48-Pin
56-Pin
HOA4 Package
HOA4
T 3512 H 67 diode
2b351
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