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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SPI80N08S2-07R OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 75 V R DS on 7.3 m ID 80 A P- TO262 -3-1 Avalanche rated dv/dt rated Integrated gate resistance for easy parallel connection	Original	SPI80N08S2-07R SPI80N08S2-07R Q67060-S7417 RN0807 BSPI80N08S2-07R,	PDF
max5470 Abstract: Q67060-S7417 Text: Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 75 V RDS on 7.3 mΩ ID 80 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 • dv/dt rated •=Integrated gate resistance for easy parallel connection	Original	P-TO262-3-1 SPI80N08S2-07R Q67060-S7417 RN0807 BSPI80N08S2-07R, SPI80N08S2-07R max5470 Q67060-S7417	PDF
300W buck converter 60V OUTPUT Abstract: S5830 Text: SPI80N08S2-07R OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature VDS 75 V R DS on 7.3 m ID 80 A P- TO262 -3-1 Avalanche rated dv/dt rated Ideal for fast switching buck converter Integrated gate resistance	Original	SPI80N08S2-07R SPI80N08S2-07R Q67060-S7417 RN0807 BSPI80N08S2-07R, 300W buck converter 60V OUTPUT S5830	PDF
s7417 Abstract: ANPS071E BSPI80N08S2-07R SPI80N08S2-07R Q67060-S7417 Text: SPI80N08S2-07R OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode R DS on 7.3 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 • dv/dt rated • Integrated gate resistance for easy parallel connection	Original	SPI80N08S2-07R Q67060-S7417 RN0807 BSPI80N08S2-07R, SPI80N08S2-07R s7417 ANPS071E BSPI80N08S2-07R Q67060-S7417	PDF