Untitled
Abstract: No abstract text available
Text: L99DZ80EP Door actuator driver Features • One full bridge for 6 A load RON = 150 mΩ ■ Two half bridges for 3 A load (RON = 300 mΩ) ■ Two half bridges for 0.5 A load (RON = 1600 mΩ) *$3*&)7 TQFP-64 ■ One high-side driver for 5 A load (RON = 100 mΩ)
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L99DZ80EP
TQFP-64
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Untitled
Abstract: No abstract text available
Text: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363mΩ max (@VGS = −1.8 V) Ron = 230mΩ (max) (@VGS = −2.5 V) 2.1±0.1 Ron = 158mΩ (max) (@VGS = −4.0 V)
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SSM3J108TU
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Untitled
Abstract: No abstract text available
Text: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363m max (@VGS = −1.8 V) Ron = 230m (max) (@VGS = −2.5 V) 2.1±0.1 Ron = 158m (max) (@VGS = −4.0 V)
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SSM3J108TU
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SSM3J108TU
Abstract: No abstract text available
Text: SSM3J108TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type SSM3J108TU High Speed Switching Applications Low on-resistance: Unit: mm Ron = 363mΩ max (@VGS = −1.8 V) Ron = 230mΩ (max) (@VGS = −2.5 V) 2.1±0.1 Ron = 158mΩ (max) (@VGS = −4.0 V)
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SSM3J108TU
SSM3J108TU
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l99dz80
Abstract: VG-H DC Motor H-drivers w61b
Text: L99DZ80EP Door actuator driver Features • One full bridge for 6 A load RON = 150 mΩ ■ Two half bridges for 3 A load (RON = 300 mΩ) ■ Two half bridges for 0.5 A load (RON = 1600 mΩ) *$3*&)7 TQFP-64 ■ One high-side driver for 5 A load (RON = 100 mΩ)
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L99DZ80EP
l99dz80
VG-H
DC Motor H-drivers
w61b
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Untitled
Abstract: No abstract text available
Text: L99DZ80EP Door actuator driver Features • One full bridge for 6 A load RON = 150 mΩ ■ Two half bridges for 3 A load (RON = 300 mΩ) ■ Two half bridges for 0.5 A load (RON = 1600 mΩ) *$3*&)7 TQFP-64 ■ One high-side driver for 5 A load (RON = 100 mΩ)
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L99DZ80EP
TQFP-64
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SSM3J115TU
Abstract: No abstract text available
Text: SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications Unit: mm Ron = 353 mΩ max (@VGS = −1.5 V) Ron = 193 mΩ (max) (@VGS = −1.8 V) Ron = 125 mΩ (max) (@VGS = −2.5 V)
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SSM3J115TU
SSM3J115TU
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Untitled
Abstract: No abstract text available
Text: SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications Unit: mm 2.1±0.1 Ron = 353 m max (@VGS = −1.5 V) Ron = 193 m (max) (@VGS = −1.8 V) Ron = 125 m (max) (@VGS = −2.5 V)
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SSM3J115TU
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SSM3J115TU
Abstract: No abstract text available
Text: SSM3J115TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J115TU High-Speed Switching Applications Power Management Switch Applications 2.1±0.1 Ron = 353 mΩ max (@VGS = −1.5 V) Ron = 193 mΩ (max) (@VGS = −1.8 V) Ron = 125 mΩ (max) (@VGS = −2.5 V)
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SSM3J115TU
SSM3J115TU
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I2C and SPI/QSPI/MICROWIRE
Abstract: MAX4526 MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Text: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and
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MAX4562/MAX4563
20kHz
-85dB,
10MHz
-55dB.
MAX4562
MAX4563
MAX4562/MAX4563
I2C and SPI/QSPI/MICROWIRE
MAX4526
MAX456
MAX4562CEE
MAX4562EEE
MAX4563CEE
MAX4563EEE
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R2A2
Abstract: R2A20101NP
Text: R2A20101BM/NP Monolithic Synchronous Step-Down DC/DC Converter REJ03D0790-0100 Preliminary Rev.1.00 Jan 06, 2006 Features • Built-in low Ron power MOS FETs Pch Ron = 0.30 Ω Typ , Nch Ron = 0.14 Ω (Typ) • High switching frequency: 2 MHz (Max) • Output current: 650 mA (Max)
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R2A20101BM/NP
REJ03D0790-0100
R2A2
R2A20101NP
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MAX4526
Abstract: MAX456 MAX4562 MAX4562CEE MAX4562EEE MAX4563 MAX4563CEE MAX4563EEE
Text: 19-1461; Rev 0; 4/99 Serially Controlled, Clickless Audio/Video Switches The MAX4562/MAX4563 serial-interface controlled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and
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MAX4562/MAX4563
20kHz
-85dB,
10MHz
-55dB.
MAX4562
MAX4563
MAX4562/MAX4563
MAX4526
MAX456
MAX4562CEE
MAX4562EEE
MAX4563CEE
MAX4563EEE
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FSA1156
Abstract: FSA1156L6X FSA1156P6 FSA1156P6X FSA1157 FSA1157L6X FSA1157P6 FSA1157P6X
Text: FSA1156, FSA1157 Low-RON Low-Voltage SPST Analog Switch Features General Description • Maximum 0.9Ω RON for 4.5V Supply at 25°C The FSA1156 and FSA1157 are high-performance Single-Pole / Single-Throw SPST analog switches. The devices feature ultra-low RON of 0.75Ω (typical) and
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FSA1156,
FSA1157
FSA1156
FSA1157
FSA1156L6X
FSA1156P6
FSA1156P6X
FSA1157L6X
FSA1157P6
FSA1157P6X
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Untitled
Abstract: No abstract text available
Text: FSA1156, FSA1157 Low-RON Low-Voltage SPST Analog Switch Features General Description • Maximum 0.9Ω RON for 4.5V Supply at 25°C The FSA1156 and FSA1157 are high-performance Single-Pole / Single-Throw SPST analog switches. The devices feature ultra-low RON of 0.75Ω (typical) and
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FSA1156,
FSA1157
FSA1156
FSA1157
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Untitled
Abstract: No abstract text available
Text: R2A20101BM/NP Monolithic Synchronous Step-Down DC/DC Converter REJ03D0790-0300 Rev.3.00 May 14, 2008 Features • Built-in low Ron power MOS FETs Pch Ron = 0.30 Ω Typ , Nch Ron = 0.14 Ω (Typ) • High switching frequency: 2 MHz (Max) • Output current: 650 mA (Max)
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R2A20101BM/NP
REJ03D0790-0300
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EAO DATE CODE
Abstract: No abstract text available
Text: R2A20101BM/NP Monolithic Synchronous Step-Down DC/DC Converter REJ03D0790-0200 Preliminary Rev.2.00 Nov 28, 2006 Features • Built-in low Ron power MOS FETs Pch Ron = 0.30 Ω Typ , Nch Ron = 0.14 Ω (Typ) • High switching frequency: 2 MHz (Max) • Output current: 650 mA (Max)
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R2A20101BM/NP
REJ03D0790-0200
EAO DATE CODE
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Broad com 2156 processor
Abstract: FSA2156 FSA2156L6X FSA2156P6 FSA2156P6X J-STD-020B SC70-6
Text: FSA2156 Low-Voltage SPST 0.4Ω Analog Switch Features Description Maximum 0.7Ω ON resistance RON for +2.7V supply 0.25Ω max RON flatness for +2.7V supply Space-saving Pb-free MicroPakTM and SC70 The FSA2156 is a high-performance Single-Pole SingleThrow (SPST) analog switch that features ultra low RON
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FSA2156
200mA)
Broad com 2156 processor
FSA2156L6X
FSA2156P6
FSA2156P6X
J-STD-020B
SC70-6
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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Untitled
Abstract: No abstract text available
Text: 19-1461; Rev 0; 4/99 Se ria lly Cont rolle d, Clic k le ss Audio/Vide o Sw it c he s The MAX4562/MAX4563 serial-interfac e c ontrolled switches are ideal for multimedia applications. Each device features 30Ω max on-resistance RON , 5Ω RON match, and 5Ω RON flatness. Audio off-isolation and
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MAX4562/MAX4563
20kHz
-85dB,
10MHz
-55dB.
MAX4562
MAX4563
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UMLP-10
Abstract: FSA2269 STG3684A FSA2257 FSA2267 FSA2267A FSA2268T FSA2270T FSA2271T ISL54050
Text: 2x SPDT Audio Switches RON ≥ 0.95Ω RON ≤ 0.95Ω Standard Signal Capability Negative Swing Signal Capability Noise Reduction Features FSA2257 FSA2267 Low ICCT Pin Compatibility NLAS5223 ISL54050 Pin Compatibility STG3684A FSA2267A FSA2268T FSA2269 TS
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FSA2257
FSA2267
NLAS5223
ISL54050
STG3684A
FSA2268T
FSA2269
FSA2270T
FSA2271T
FSA2267A
UMLP-10
STG3684A
FSA2257
FSA2267
FSA2267A
FSA2268T
FSA2270T
FSA2271T
ISL54050
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Untitled
Abstract: No abstract text available
Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)
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SSM6N7002FU
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SSM6J53FE
Abstract: No abstract text available
Text: SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications Unit : mm 1.6±0.05 : Ron = 204 mΩ max (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V)
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SSM6J53FE
SSM6J53FE
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SSM6J08FU
Abstract: No abstract text available
Text: SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSII Preliminary SSM6J08FU Power Management Switch DC-DC Converter • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V)
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SSM6J08FU
SSM6J08FU
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Untitled
Abstract: No abstract text available
Text: SSM6N7002FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002FU High Speed Switching Applications Analog Switch Applications Unit: mm • Small package • Low ON resistance : Ron = 3.3 Ω max (@VGS = 4.5 V) : Ron = 3.2 Ω (max) (@VGS = 5 V)
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SSM6N7002FU
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