rs 3060 cj
Abstract: triode rs 3060 cj RS3060CJ thales thales p rs tube
Text: INDUSTRIAL RF HEATING RS 3060 CJ Water-cooled triode 120 kW Output power: 120 kW in CW mode Anode voltage: 14 kV Anode dissipation: 40 kW max. Frequency up to 100 MHz INDUSTRIAL RF HEATING The RS 3060 CJ is a RF power triode designed specifically for industrial
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rs 3060 cj
Abstract: thales ITK 200-1 RS3026CL itl 12-1 itk 120-2 thales ITL 12 thales itl 15-2 rs 3026 cj itl 5-1 thales
Text: INDUSTRIAL RF HEATING Ceramic-metal triodes RF HEATING QUALITY T hales Electron Devices’ Furthermore, these tubes are fully expertise in power grid tube c o m p a t i b l e w i t h c o m m e rc i a l technology makes us today's leader standards and can be easily
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MLP7122
Abstract: No abstract text available
Text: Silicon Limiter Diodes • Low Loss The Aeroflex / Metelics MLP-7100 Series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I”
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MLP-7100
MLP71
MLP7100
MLP7101
MLP7102
MLP7122
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MLP7110
Abstract: MLP7100 CHIP MLP7100 MicroMetrics MLP7130 limiters MLP7122 MLP7101 MLP7112 MLP7130 MLP7121
Text: Limiter Diodes Description The MicroMetrics MLP 7100 series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I” region thicknesses and capacitances provide variable threshold and leakage power levels and power handling capability.
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MLP7100
Abstract: MicroMetrics MLP7130 MLP7121 MLP7122 MLP7120 MLP7101 MLP7102 MLP7110 MLP7111 MLP7112
Text: Control Devices: MLP 7100 Series Limiter Diodes Applications The MLP 7100 series limiters are for use in waveguides, coax, microstrip or stripline. Single or cascade devices may be used depending on power levels. Features • Low Loss • Greater Bandwidth
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MLP7121
Abstract: MicroMetrics MLP7130 MLP7100 MLP7101 MLP7102 MLP7110 MLP7111 MLP7112 MLP7120 MLP7130
Text: Limiter Diodes Description The MicroMetrics MLP 7100 series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I” region thicknesses and capacitances provide variable threshold and leakage power levels and power handling capability.
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p0402fc
Abstract: P0402FCxxC Series
Text: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed
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P0402FC3
P0402FC36C
P0402FCxxC
p0402fc
P0402FCxxC Series
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Untitled
Abstract: No abstract text available
Text: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed
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P0402FC3
P0402FC36C
P0402FCxxC
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0402 solder mask
Abstract: No abstract text available
Text: 05139 LC0402FC3.3C - LC0402FC36C Only One Name Means ProTek’Tion 200W LOW CAPACITANCE flip chip tvs array Description The LC0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
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LC0402FC3
LC0402FC36C
LC0402FCxxC
0402 solder mask
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Untitled
Abstract: No abstract text available
Text: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed
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P0402FC3
P0402FC36C
P0402FCxxC
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LC0402FC05C
Abstract: LC0402FC08C LC0402FC12C LC0402FC15C LC0402FC24C
Text: 05139 LC0402FC3.3C - LC0402FC36C Only One Name Means ProTek’Tion 200W LOW CAPACITANCE flip chip tvs array Description The LC0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 requirements. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
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LC0402FC3
LC0402FC36C
LC0402FCxxC
LC0402FC05C
LC0402FC08C
LC0402FC12C
LC0402FC15C
LC0402FC24C
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Untitled
Abstract: No abstract text available
Text: 05107 P0402FC3.3C - P0402FC36C Only One Name Means ProTek’Tion 250w flip chip tvs array Description The P0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Developed
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P0402FC3
P0402FC36C
P0402FCxxC
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str f 6456
Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Text: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH
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09-Dec-96
str f 6456
str x 6456
SM 5126 BP
STR F 6168
str 6668
STR G 6352
STR 6456
str f 6468
321 CJ 7121
AXP 209 IC
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rs3300cj
Abstract: RS3060CJ RS3021CJ RS3040CJ Q52-X3150 rs 1023 RS3150CJ Q51X1054 RS3010CL Q52-X3026
Text: Special-Purpose Tubes Special-purpose tubes are preferably used in RF/AF amplifiers, for pulse operation, modulation, in VHF and TV transmitters as well as for industrial heating. Type ! Q r ii^ 'n g r o d e ] P ric e e a c n !i + ; 5• - 1. RS 1002 A
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RS1Q26
RS3010CJ
RS3021CJ
3026a
RS3040CJ
RS3060CJ
RS3300CJ
Q54-X1CX32
Q54-X1003
Q54-X1006
Q52-X3150
rs 1023
RS3150CJ
Q51X1054
RS3010CL
Q52-X3026
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siemens rs 3300 cj
Abstract: siemens rs 3060 cj B57820-M561-A5 7835 thyristor B57820 44071 thyristor P 2346 B57364 S 364 SIEMENS THYRISTOR NTC Siemens
Text: B57364 S 364 Inrush Current Limiting Applications 7 max • Switch-mode power supplies • Soft-start motors,•e g in vacuum cleaners Features • • • • • • Useable in series connections up to 265 Vrms Coated thermistor disk Kinked leads of tinned, copper wire
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B57364
E69802)
siemens rs 3300 cj
siemens rs 3060 cj
B57820-M561-A5
7835 thyristor
B57820
44071
thyristor P 2346
B57364 S 364
SIEMENS THYRISTOR
NTC Siemens
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NTC Thermistor S 234
Abstract: CI 3060 elsys B57234S479M B57234-S220-M NTC Inrush Current Limiters Thermistor B57234S221M ntc thermistors for inrush current limiting B57234-S109-M NTC 4,7 S M B57234-S509-M
Text: o inrush Current Limiting B 57234 S 234 Applications 7 max • Inrush current limiting in peripheral communication equipment, monitors, PCs, etc. • Soft-start motors, e.g. in vacuum cleaners • Circuit applications requiring high continuous currents • Useable in series connection up to 245 Vrms
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TNT0035-Y
NTC Thermistor S 234
CI 3060 elsys
B57234S479M
B57234-S220-M
NTC Inrush Current Limiters Thermistor
B57234S221M
ntc thermistors for inrush current limiting
B57234-S109-M
NTC 4,7 S M
B57234-S509-M
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3045 PT
Abstract: MBR30150PT CI 3060 elsys 2sc 2026 304S MBR3035PT rfltw
Text: E MBR3035PT- MBR30150PT TAIWAN SEMICONDUCTOR RoHS [Pb 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TQ-247AD C O M P L IA N C E m Features ❖ P la s tic m a te ria l u s e d ca rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s 94V -Q '> Metal silicon Junction, m ajority c a rrlc r conduct on
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MBR3035PT
MBR30150PT
P/TQ-247AD
MBR3035PTTHRU
MBR30150PT)
kR33A9CFTÂ
3045 PT
MBR30150PT
CI 3060 elsys
2sc 2026
304S
rfltw
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Untitled
Abstract: No abstract text available
Text: KS0090B 26 COM / 64 SEG DRIVER & CONTROLLER FOR STN LCD APR IL 1999. KS0090B 26COM/64SEG DRIVER & CONTROLLER FOR STN LCD CONTENTS
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KS0090B
26COM/64SEG
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ABM30
Abstract: No abstract text available
Text: BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to form a junction. These diodes are designed for applications up to 40 GHz for microwave integrated circuits and hybrid ele
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-10dBm
10dBm
15dBm
20dBm
ABM30
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CI 3060 elsys
Abstract: rs 3060 cj CI 3060 -elsys ci 3060 MBRF3060CT esis power MBRF30150CT MBRF3035CT tip 3035
Text: s TAIWAN SEMICONDUCTOR ffi RoHS COMPLIANCE MBRF3035CT - MBRF30150CT Isolated 30.0 AMPS. Schottky Barrier Rectifiers ITO-22QAB Features -J•4-i- ■i-0- Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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MBRF3035CT
MBRF30150CT
ITO-22QAB
I0ori54l
-606iTG
MBRF30150CT)
CI 3060 elsys
rs 3060 cj
CI 3060 -elsys
ci 3060
MBRF3060CT
esis power
MBRF30150CT
tip 3035
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30100 PT
Abstract: SR30150 SR3020PT sr 3060 sr3015 SR3090PT
Text: E SR3020PT -SR30150PT TAIWAN SEM ICONDUCTO R 30.0 AMPS. Schottky Barrier Rectifiers RoHS m C O M P L IA N C E ^ E lI & 2 4 J A D .rai/.ig* . f r f i 1M| ja w ' , i— i - 44- •> ■'ir <■ i n jjPVY«V 71.3| VTYi3j Dual rectifier con s tru c tio n . positive ce nter-ta p
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SR3020PT
SR30150PT
26tir
20PTTHRU
SR30150PT)
30100 PT
SR30150
sr 3060
sr3015
SR3090PT
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"Advanced Semiconductor, Inc"
Abstract: ADVANCED SEMICONDUCTOR ABP1 ABL9001
Text: 02 58354 A D V A N C E D S E M I C O N D U C T O R ADVANCED SEM ICO ND UC TOR 92D 00100 Ì2 D Ó-f DE|G25fl35M GD0 Q1DG t. | BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are 'manufactured by the deposition of a suitable barrier
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D25A35M
00QQ10D
-10dBm
10dBm
15dBm
"Advanced Semiconductor, Inc"
ADVANCED SEMICONDUCTOR
ABP1
ABL9001
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k30a
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR M BR F3035CT - M B R F3G150CT Isolated 30.0 AMPS. Schottky Barrier Rectifiers RoHS IT0-220AB CO M PLIANCE Features <r <• <• -v<• -v-v-v- UT.Z.lìi .il ¿¿»•.vu/ U9edcanrie9 P la 9 lio m a te r ia l U n c e iw r it e r s L a b o r a to r y
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F3035CT
F3G150CT
IT0-220AB
k30a
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frequency multiplier X3
Abstract: No abstract text available
Text: Selection Guide for Multiplier Diode SELECTION GUIDE FOR MULTIPLIER DIODES When selecting SRD, Dual Mode or variable capacitance varactors for a multiplier, first determine the following for the multiplier circuit: 1 Output Frequency f0) 2) Input Frequency
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