R113 151 000
Abstract: SMA 905 ferrule R213 r113 664 000 R282 235 003 ASSEMBLY INSTRUCTIONS Radiall crimp 02 r213 665 000w ASSEMBLY INSTRUCTIONS Radiall mcx SMA 906 ferrule dimensions ASSEMBLY INSTRUCTIONS Radiall
Text: RS 547-776 RS 547-770 RS 547-760 RS 547-764 RS 547-754 MCX/MMBX CONTENTS PAGE MCX General . 4 Interface. 5
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NE33284A
Abstract: NE33284AS NE33284A-SL NE33284A-T1
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
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NE33284A
24-Hour
NE33284AS
NE33284A-SL
NE33284A-T1
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NE33284AS
Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
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NE33284A
24-Hour
NE33284AS
NE33284A-SL
NE33284A-T1
MODEL 536
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B1107
Abstract: dupont delrin 507 k4070 B2213-01 P-C2616-14 k4110 c4229 F-41408-UG F-41811-UG P-41811-UG
Text: Section 6. Standard Pot Core Sizes and Accessories 3x2 DIMENSIONS inches A B 2B D .155 ± .003 .0375 ± .002 .075 ± .004 .0175 min. mm 3.94 ± .08 .953 ± .05 1.91 ± .10 .445 min. mm inches 2D E F G .035 min. .115 min. .057 max. .032 ± .004 .889 min. 2.92 min.
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H/1000T)
F-40302-UG
B1107
dupont delrin 507
k4070
B2213-01
P-C2616-14
k4110
c4229
F-41408-UG
F-41811-UG
P-41811-UG
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Untitled
Abstract: No abstract text available
Text: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features ! Single chip solution with only a few external components ! Stand-alone fixed-frequency user mode ! Programmable multi-channel user mode ! Low current consumption in active mode and very low standby current
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TH7122
930MHz
ISO14001
June/07
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TH7122.2
Abstract: 125khz RFID schematic TH7122
Text: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features Single chip solution with only a few external components Stand-alone fixed-frequency user mode Programmable multi-channel user mode Low current consumption in active mode and very low standby current
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TH7122
930MHz
ISO14001
June/08
TH7122.2
125khz RFID schematic
TH7122
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transistor SMD n03
Abstract: smd cookbook Datasheet of 7492 IC TPMS transceiver BBY65 CDSCB10M7GA136 HC49 SFECF10M7HA00 TH7122 TH71221
Text: TH71221 27 to 930MHz FSK/FM/ASK Transceiver Features ! Single chip solution with only a few external components ! Stand-alone fixed-frequency user mode ! Programmable multi-channel user mode ! Low current consumption in active mode and very low standby current
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TH71221
930MHz
ISO14001
June/07
transistor SMD n03
smd cookbook
Datasheet of 7492 IC
TPMS transceiver
BBY65
CDSCB10M7GA136
HC49
SFECF10M7HA00
TH7122
TH71221
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Untitled
Abstract: No abstract text available
Text: TH7122 27 to 930MHz FSK/FM/ASK Transceiver Features 1 Single chip solution with only a few external components 1 Stand-alone fixed-frequency user mode 1 Programmable multi-channel user mode 1 Low current consumption in active mode and very low standby current
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TH7122
930MHz
ISO14001
June/12
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ATMEL 708
Abstract: MIL-STD-454L Atmel 434 SF1411 6822 TRANSISTOR equivalent 5 input nand gate atmel 206 CMOS GATE ARRAYs m38510 1076 ATL100
Text: ju > j î o MB Features • 0.8 p. effective gate lengths (1.0 ^ drawn combined with close metal spacing provides outstanding speed/power performance • There is no new software to learn with Atmel's flexible design system • Design translation of existing ASIC, PLD and FPGA designs
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0044D-10/91/5M
ATMEL 708
MIL-STD-454L
Atmel 434
SF1411
6822 TRANSISTOR equivalent
5 input nand gate
atmel 206
CMOS GATE ARRAYs
m38510 1076
ATL100
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2E104
Abstract: E104K SH-E 878
Text: Polypropylene Capacitor Plastic Film Wrap, Epoxy End Fill Type PT12 T yp e P T12 p o lyp rop ylene precision cap a cito rs w hich e xh ib it unique and o u ts ta n d in g e le c tric a l and e n viro n m e n ta l ch a ra c te ris tic s . The fo llow in g are som e o f the m ost significa nt:
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Untitled
Abstract: No abstract text available
Text: 10 13 71 an MATERIALS AND FINISHES BODY ZINC ALLOY P LA T E D NICKEL CENTER CONTACT PHOSPHOR BRONZE BNC JACK P LA T E D GOLD/TIN INTERFACE 9.65 _ REF- '.3 8 0 TOP VIEW INSULATOR POLYPRO PYLENE j ~ ~ l 11.02 REF 8,60 .434 .339 0 H ref 13.00 3 .8 0 ± 0 .0 5
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OO31b
SD-73100-0105
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MA4T64400
Abstract: low noise transistors MA4T645 MA4T644
Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t
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A4T64400
MA4T64435
MA4T64433
OT-23
MA4T64539
OT-143
4T644X
OT-143)
MA4T64400
low noise transistors
MA4T645
MA4T644
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MFC04
Abstract: LHL06 TB 222 L CM04RC04 RBU04 MFCN08 BU05MC02T RQC05 rcc05 CM04RC01 UCN033
Text: Packaging Index SM D :TA PE& REEL WB PRODUCTS 5 v 9 □ > = r 'y ^ M ULTILAYER CERAM IC CAPACITO RS R S i i r ^ 5 v 0 3 y ;f y J& TUBULAR TYPE CERAMIC CAPACITORS ▲ Æ m # A • WOUND CHIP INDUCTORS M ULTILAYER CHIP INDUCTORS M ULTILAYER CHIP INDUCTORS
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MK063
MK105
EVK105
MK107
MK212
2K212
4K212
MK316
MFC04
LHL06 TB 222 L
CM04RC04
RBU04
MFCN08
BU05MC02T
RQC05
rcc05
CM04RC01
UCN033
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DESC 87106
Abstract: No abstract text available
Text: Metuchen C “We Offer Quick Solutions to Noise Pollution” 1-800-679-0516 1-800-679-9959 www.metcaps.c Sw itchm ode Pow er Supply C a p a cito rs S M P S D S C C Dwg. 87106 E — Code Dim A M axi/ Dim B Max 3/ 1 2 3 4 5 6 .650 .650 .650 .650 .650 .650
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Untitled
Abstract: No abstract text available
Text: S i GEC P L E S S E Y PRELIMINARY INFORMATION S E MI CO NDU CT O RS KESTX01 400MHz - 460MHz ASK TRANSMITTER The KESTX01 is a single chip ASK Amplitude Shift Key transmitter IC. It is designed to operate in a variety of low power radio applications including keyless entry, general
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KESTX01
400MHz
460MHz
KESTX01
37bfl522
0025S72
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4511 gm
Abstract: TTC 5200 ir 8707 nte 6250 76722 8840 TIC 1260 stoneridge se 5000 x4202 STR G 6352 SG 3425 N
Text: ülmEE Distributors W I R E L E S S 4 fiC Europe Austria SPO ERL E ELE C TR O N IC Am K ehlerpark 1 6850 D ornbirn Tel: 43 5572 38 65 0 0 -0 Fax: 43 5572 38 65 0 0 -9 0 A rrow D enm ark A/S S m edeholm 13 A 2730 Herlev Tel: 45 44 50 82 00 Fax: 45 44 50 82 03
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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NE42484A
Abstract: transistor NEC D 986 NE42484A-SL ne42484 IC ATA 2388 L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking L nec gaas fet marking NEC Ga FET marking A KU 506 transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET PACKAGE DIMENSIONS Unit : mm DESCRIPTION The N E42484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484A
NE42484A
NE42484A-SL
NE42484A-T1
transistor NEC D 986
ne42484
IC ATA 2388
L to Ku BAND LOW NOISE AMPLIFIER
NEC Ga FET marking L
nec gaas fet marking
NEC Ga FET marking A
KU 506 transistor
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NE33284A
Abstract: NE33284A-SL NE33284AS
Text: SUPER LOW NOISE HJ FET NE33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm
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NE33284A
NE33284A
24-Hour
NE33284A-SL
NE33284AS
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str f 6456
Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Text: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH
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09-Dec-96
str f 6456
str x 6456
SM 5126 BP
STR F 6168
str 6668
STR G 6352
STR 6456
str f 6468
321 CJ 7121
AXP 209 IC
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Untitled
Abstract: No abstract text available
Text: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran dom A cce ss M em ory designed to sup port high speed
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KM79C86
KM79C86
7Tb4142
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TWS 434 pin diagram
Abstract: SRAM timing
Text: CMOS SRAM KM79C86 3 2 K x 9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • The KM79C86 is a 294,912 b it S ynchronous S ta tic Ran dom A cce ss M em ory designed to sup port high speed
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KM79C86
32Kx9
44-Pin
KM79C86
7Tb4142
TWS 434 pin diagram
SRAM timing
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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59012 h 331
Abstract: No abstract text available
Text: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)
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22M12
10M12
22M12
59012 h 331
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