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    RS MICROWAVE COMPANY Search Results

    RS MICROWAVE COMPANY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    26LS30/BEA Rochester Electronics LLC Line Driver, 1 Func, 4 Driver, CDIP16, CERAMIC, DIP-16 Visit Rochester Electronics LLC Buy
    DS96174N Rochester Electronics LLC Line Driver, 2 Func, 2 Driver, BIPolar, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    AM26LS30PC Rochester Electronics LLC Line Driver, 4 Func, 4 Driver, BIPolar, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation

    RS MICROWAVE COMPANY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RS-8960

    Abstract: diagram of gunn diode RS Microwave Company 747 opamp X-band doppler radar module metal detector using 555 timer gunn diode radar module radar gunn diode 308-017 rs s band doppler mixer
    Text: Issued July 1985 003-598 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.


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    X-band doppler radar module

    Abstract: RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier
    Text: Issued March 1997 232-2324 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.


    Original     		PDF R/3598 X-band doppler radar module RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier

    2N3866A

    Abstract: No abstract text available
    Text: 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTO. 1 of 2 Home Part Number: 2N3866A Online Store 2N3866A Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at


    Original     		PDF 2N3866A com/2n3866a 2N3866A

    gunn diode x band amplifier

    Abstract: RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode
    Text: E/F3598 Issued July 1985 Doppler module Stocknumber 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave


    Original     		PDF E/F3598 R/3598 gunn diode x band amplifier RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode

    2n3632

    Abstract: No abstract text available
    Text: 2N3632 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WI. 1 of 1 Home Part Number: 2N3632 Online Store 2N3632 Diodes RF Transistors & M IC RO WAVE TRANSISTO RS VHF - UHF C LASS C WIDE BAND Integrated Circuits


    Original     		PDF 2N3632 com/2n3632 2N3632 O-210AB

    2N5053

    Abstract: 2N5053 package transistor TO-72
    Text: 2N5053 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. 1 of 1 Home Part Number: 2N5053 Online Store 2N5053 Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at


    Original     		PDF 2N5053 com/2n5053 2N5053 2N5053 package transistor TO-72

    2n5109

    Abstract: transistor 2N5109
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR. 1 of 1 Home Part Number: 2N5109 Online Store 2N5109 Diodes RF & M IC RO WAVE DISC RETE LO W PO WER TRANSISTO RS Transistors Enter code INTER3 at


    Original     		PDF 2N5109 com/2n5109 2N5109 transistor 2N5109

    1030 mhz filter

    Abstract: 1030 mhz notch filter
    Text: RS MICROWAVE COMPANY, INC NOTCH FILTERS * * * * * PART NO 20981 21901-1 21901 F 32401-1* 40351-1 40421-1 50523-1 50523-2 50703-3 83522 83523 Low Insertion Loss and Rejection to 66 dB 1030 or 1090 MHz Notch Center Frequency 250 Watt and 1250 Watt Peak Power


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    MICROWAVE ASSOCIATES ISOLATOR

    Abstract: AS218 transistor
    Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and


    Original     		PDF CAT501-09A MICROWAVE ASSOCIATES ISOLATOR AS218 transistor

    PIN diode ADS model

    Abstract: Microwave PIN diode spice Microwave detector diodes 18 GHz HSMS-285x model ADS 10 diode Microwave detector diodes HSMS-286 diode ADS model spice HSMS-285X
    Text: 6 July 1999 Choosing the Right Diode For Your AGC Detector Raymond W. Waugh Diode Applications, Wireless Semiconductor Division Hewlett-Packard Company AGC Automatic Gain Control loops are used to control the gain or output power of amplifiers in a wide variety


    Original     		PDF HSMS-282x HSMS-285x HSMS-286x theHSMS-282x HSMS-286x PIN diode ADS model Microwave PIN diode spice Microwave detector diodes 18 GHz HSMS-285x model ADS 10 diode Microwave detector diodes HSMS-286 diode ADS model spice

    mmic

    Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
    Text: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)


    Original     		PDF LN-162315-H4 LN-141510-H4 LN-141526-H4 mmic mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4

    hsms-285x

    Abstract: Microwave zero bias detector diodes Zero Bias Small Detector Diodes Hewlett-Packard microwave pin diode Hewlett-Packard Semiconductor HSMS-286x
    Text: 6 July 1999 Detector Selector Wireless Semiconductor Division Hewlett-Packard Company The selection of the proper Schottky diode for a detector application depends upon several factors, and must be carefully done. The circuit designer must consider the relative values


    Original     		PDF d285x HSMS-282x HSMS-285x HSMS-286x HSMS-286x hsms-285x Microwave zero bias detector diodes Zero Bias Small Detector Diodes Hewlett-Packard microwave pin diode Hewlett-Packard Semiconductor

    SMD CAPACITORS 107E

    Abstract: CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,


    Original     		PDF QV2000 S-RFMTF17M898-N SMD CAPACITORS 107E CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101

    smd TRANSISTOR code marking w2

    Abstract: g1 TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING CODE Circuit using ic 1895 bel ultrasonic movement DETECTOR CIRCUIT DIAGRAM 1895 bel ic TRANSISTOR SMD MARKING CODE ag FR4 epoxy dielectric constant 4.4 TRANSISTOR SMD MARKING CODES 431A SMD CODE MARKING
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/ Thin-Film AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,


    Original     		PDF QV2000 S-RFTF20M798-C smd TRANSISTOR code marking w2 g1 TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING CODE Circuit using ic 1895 bel ultrasonic movement DETECTOR CIRCUIT DIAGRAM 1895 bel ic TRANSISTOR SMD MARKING CODE ag FR4 epoxy dielectric constant 4.4 TRANSISTOR SMD MARKING CODES 431A SMD CODE MARKING

    TRANSISTOR SMD MARKING CODE ag4

    Abstract: 6647a srf 1714 47056 smd Transistor gl 1117 B 1155 lga socket 0402LGA 7082 BEL 1895 CDR11BP
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and


    Original     		PDF S-RFMTF15M1203-C TRANSISTOR SMD MARKING CODE ag4 6647a srf 1714 47056 smd Transistor gl 1117 B 1155 lga socket 0402LGA 7082 BEL 1895 CDR11BP

    TRANSISTOR ZFW

    Abstract: zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335
    Text: an AMP company Radar Pulsed Power Transistor, 5W, IOOps Pulse, 10% Duty PH2731-5M 2.7 - 3.1 GHz v2.00 Features ,930 NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PH2731-5M 40-j12 TT50M50A7 TRANSISTOR ZFW zfw 03 capacitor mallory ZFW TRANSISTOR transistor 5w transistor j18 PH2731-5M TT50M50A transistor power 5w transistor 335

    5082-2835 diode

    Abstract: "5082-2835" 5082-2817 HSCH-3486 HSCH-5310 5082-2755 noise diode Silicon Point Contact Mixer Diodes Microwave Mixer Diodes
    Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship


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    diode hp 2835 schottky

    Abstract: hp 2800 diode mixer HSCH-3486 HSCH-5310 2.2 GHz local oscillator 5082-2817 HSCH3486 power semiconductor 1973 Hewlett-Packard microwave pin diode microwave mixer diode
    Text: The Schottky Diode Mixer Application Note 995 Introduction A major application of the Schottky diode is the production of the difference frequency when two frequencies are combined or mixed in the diode. This mixing action is the result of the non-linear relationship


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    MIL-PRF-49464

    Abstract: No abstract text available
    Text: www.avx.com AVX Single Layer Ceramic & MOS Capacitors for Applications from DC to Light Version 10.10 Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3


    Original     		PDF S-SLC0M1010-C MIL-PRF-49464

    metal detector vlf 15khz

    Abstract: sma connector 0.508mm Smith esr meter kit Shielded Microstrip 6647a dielectric resonator KYOCERA GH0158101MA6N uhf microwave fet MIL-C-55681 2082-2700-00
    Text: www.avx.com AVX Single Layer Ceramic & MOS Capacitors for Applications from DC to Light Version 6.1 Microwave Single Layer Capacitors Table of Contents Single Layer Ceramic Capacitors SLC’s General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3


    Original     		PDF S-SLC5M706-C metal detector vlf 15khz sma connector 0.508mm Smith esr meter kit Shielded Microstrip 6647a dielectric resonator KYOCERA GH0158101MA6N uhf microwave fet MIL-C-55681 2082-2700-00

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs


    OCR Scan     		PDF 125002/00/03/pp12

    TIC 138

    Abstract: anzac termination insensitive mixer ts.228 tic 208 tic 136 tic 122 tic 234
    Text: TABLE OF CONTENTS Cantenis G e n e ra l page Product Section F in d e r. 1 Company In tro d u c tio n . 4


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    MA4P800

    Abstract: No abstract text available
    Text: m an A M P company Beam-Lead PIN Diodes MA4P461, MA4P462, MA4P800, MA4P801 V 2.00 Features • • • • • High Performance Microwave Characteristics Fast Switching Speeds Glass Encapsulated Construction Hermetically Sealed Mechanically Rugged - 6 Grams Minimum


    OCR Scan     		PDF MA4P461, MA4P462, MA4P800, MA4P801 MA4P800

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


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