bs 170
Abstract: BS 050 transistor Q67000-S076
Text: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information
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Q67000-S076
E6288
bs 170
BS 050 transistor
Q67000-S076
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Q67000-S076
Abstract: BS 050 transistor transistor BS 170
Text: BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 170 60 V 0.3 A 5Ω TO-92 BS 170 Type BS 170 Ordering Code Q67000-S076 D Tape and Reel Information
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Q67000-S076
E6288
Q67000-S076
BS 050 transistor
transistor BS 170
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BSP 17 D
Abstract: No abstract text available
Text: BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated • VGS th = -2.1.-4.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 170 -60 V -1.7 A 0.35 Ω SOT-223 Type BSP 170 Ordering Code Q67000-S . . . Pin 2 D Pin 3 Pin 4
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Q67000-S
OT-223
E6327
BSP 17 D
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S 170 TRANSISTOR
Abstract: transistor BS 170 bs 170 Q67000-S076 bs170 Transistor Bs
Text: SIPMOS Small-Signal Transistor BS 170 ● VDS 60 V 0.3 A ● ID ● RDS on 5.0 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information 1 2 3 BS 170 Q67000-S061 bulk S G D BS 170
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Q67000-S061
Q67000-S076
E6288:
S 170 TRANSISTOR
transistor BS 170
bs 170
Q67000-S076
bs170
Transistor Bs
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Q67041-S4018
Abstract: transistor SMD bsp 62
Text: BSP 170 P Preliminary data SIPMOS Power Transistor •P-Channel •Enhancement mode •Avalanche rated •dv/dt rated Type VDS ID RDS on BSP 170 P 60 V -1.9 A 0.3 Ω Pin 1 Pin 2/4 Pin 3 G D S Package @ VGS VGS = -10 V SOT-223 Ordering Code Q67041-S4018
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OT-223
Q67041-S4018
Q67041-S4018
transistor SMD bsp 62
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Untitled
Abstract: No abstract text available
Text: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AWT1G
NSL12AW/D
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NSL12AWT1G
Abstract: No abstract text available
Text: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AWT1G
NSL12AW/D
NSL12AWT1G
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marking PD
Abstract: NSL12AW NSL12AWT1
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AW
r14525
NSL12AW/D
marking PD
NSL12AW
NSL12AWT1
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Untitled
Abstract: No abstract text available
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size
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NSL12AW
NSL12AW
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STM101N
Abstract: No abstract text available
Text: Green Product STM101N S a mHop Microelectronics C orp. Ver1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ Rugged and reliable. 170 @ VGS=10V 100V Suface Mount Package.
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STM101N
STM101N
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Untitled
Abstract: No abstract text available
Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V^GS th = 0.8.2.0V Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 Ordering Code Q67000-S076 %S(on) 5Û Pin 3 G Package Marking TO-92 BS 170 D
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Q67000-S076
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bs170
Abstract: 5K02 MARKING BS
Text: SIEMENS BS 170 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V 5 VPT05158 Pin 1 Pin 2 S Type VDS b BS 170 60 V 0.3 A Type BS 170 BS 170 Ordering Code Q67000-S061 Q67000-S076 Pin 3 G ^DS(on) Package
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VPT05158
Q67000-S061
Q67000-S076
E6288
11---------------------------------O
bs170
5K02
MARKING BS
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PC557
Abstract: bc5588 bc557 siemens bc548 sot23 BC182 BC547 BC648 BC557 SOT23 BC212
Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching C h a ra c te ris tic s T. =25°C M a x im u m R a tin g s VCEO ' c N=NPN Pt fr ^CEX VCBO VCEX mW MHz nA V 200 200 200 ( ' 206" 170 i 70 170; 170 250
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BC807
BC807W
BC808
BC817
BC817W
BC818W
BC846
BC846W
BC847
BC847W
PC557
bc5588
bc557 siemens
bc548 sot23
BC182 BC547
BC648
BC557 SOT23
BC212
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated ' ^GS th = -2.1.-4.0 V Type ^DS BSP 170 -60 V Type BSP 170 Ordering Code Q67000-S . . . -1.7 A ffDS(on) Package 0.35 Q, SOT-223 Marking Tape and Reel Information
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Q67000-S
OT-223
E6327
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7002 SOT23
Abstract: BS170 D 92 M - 03 DIODE bs 170 marking BS SOT23 MARKING SSG SOT23 marking code SN sot23 7002 n channel marking BS 7002
Text: SIEMENS SIPMOS Small-Signal Transistors VDS lD = 60 V = 0 . 1 9 . . . 0.3 A ^ D S o n = 5 .0 N channel • Enhancement mode TO -92 (SN 7 0 0 0 /B S 170) SOT-23 (SN 70 02) Packages: G 1 TO-92, SOT-23 ') Type B S 170 Û • • SN 7000 SN 7002 Marking Ordering code
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OT-23
C67000-S062
C67000-S061
Q67000-S063
Q67000-S076
7002 SOT23
BS170
D 92 M - 03 DIODE
bs 170
marking BS SOT23
MARKING SSG SOT23
marking code SN sot23
7002 n channel
marking BS
7002
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Untitled
Abstract: No abstract text available
Text: S G 5 Ï . S - 1 H M S 0 N iLKêTGMtgS SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 25 VOLTS IMD - 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR
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SD1455
SD1455
0Q7D475
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trimmer 20pF
Abstract: SD1485 push pull class AB RF linear L band sgs-thomson RF TRANSISTORS transistor 7g SGS-THOMSON RF POWER transistor zc
Text: S G S -T H O M S O N SD1485 !IL[ $ 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS AB PUSH PULL INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION
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SD1485
SD1485
7053ti
trimmer 20pF
push pull class AB RF linear L band
sgs-thomson RF TRANSISTORS
transistor 7g
SGS-THOMSON RF POWER
transistor zc
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Untitled
Abstract: No abstract text available
Text: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST
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SD1456
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JE170
Abstract: No abstract text available
Text: TRSISB? 005^075 7 • SGS-THOMSON s[UiOT !D gS r~ p 3 3 - Q ~ 7 MJ E170/171 /172 MJ E180/181 /182 S G S-THOMSON 3ÜE » COMPLEMENTARY POWER TRANSISTORS DESCRIPTIO N The MJE 170, MJE171, MJE172 (PNP types and MJE180, MJE181, MJE182 (NPN types) are silicon
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p33-Q
E170/171
E180/181
MJE171,
MJE172
MJE180,
MJE181,
MJE182
O-126
MJE170
JE170
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Untitled
Abstract: No abstract text available
Text: S G S - IH O M S O N 5 7 . IU SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS IMD -55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY DESIGNED FOR HIGH POWER LINEAR OPERATION P o u t = 14 W MIN. WITH 14.0 dB GAIN
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SD1458
SD1458
7T2T237
0D704AA
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Untitled
Abstract: No abstract text available
Text: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available
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2N2222A
MIL-S-19500
2N2222A
f-100MHz
100kHz
150mA,
300ns,
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Untitled
Abstract: No abstract text available
Text: 61096 JUS=- 2N2222A GENERAL PURPOSE NPN TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 u 0 170(4 32) r TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available
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2N2222A
MIL-S-19500
2N2222A
f-100MHz
100kHz
150mA,
300ns,
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Untitled
Abstract: No abstract text available
Text: SbE D • 'nVGSTfl D 0 Ü 7 0 0 2 170 H Z E T B HIGH FREQUENCY ZETEX S E M I C O N D U C T O R S TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY T R A N SIST O R S The transistors show n in this table are designed for high frequency operation amplifier and oscillator
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2N3866
BSY55
2N2102
2N4036
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transistor c830
Abstract: No abstract text available
Text: P ow er _ l - 3 3 - O f i 2 N 170 0 HARR IS S E M I C O N D S E CT OR File Number 141 B7E D • M 3 0 2 2 7 1 G G l ^ f l Q ^ ■ HAS Silicon N-P-N Power-Switching Transistor TERMINAL DESIGNATIONS
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O-205AD
transistor c830
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