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    S0394 Price and Stock

    Essentra Components 12SWS0394

    SHOULDER WASHER .177 ID .276 OD
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    DigiKey 12SWS0394 Bulk 879 1
    • 1 $0.1
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    Mouser Electronics 12SWS0394
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    RS 12SWS0394 Bulk 4 Weeks 1,000
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    Essentra Components 13RS039459

    ROUND SPACER, .320 ID, .395 OD,
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    DigiKey 13RS039459 Bulk 745 1
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    RS 13RS039459 Bulk 4 Weeks 500
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    Pi Supply PIS-0394

    LORA ANT PEAK 5.8DBI 915MHZ IPEX
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    DigiKey PIS-0394 Bulk 2 1
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    Samtec Inc IDSD-03-S-03.94

    INSULATION DISPLACEMENT TERMINAL
    Free Sample
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    DigiKey IDSD-03-S-03.94 Bulk 1
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    Mouser Electronics IDSD-03-S-03.94
    • 1 $3.96
    • 10 $3.96
    • 100 $2.85
    • 1000 $2.33
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    Samtec Inc IDSD-15-S-03.94

    INSULATION DISPLACEMENT TERMINAL
    Free Sample
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    DigiKey IDSD-15-S-03.94 Bulk 1
    • 1 $9.29
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    S0394 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JM-S03943A-B

    Abstract: D-12 JM-S039
    Text: 深圳市佳美光电电子有限公司 产品规格书 JM-S03943A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 [email protected] 深圳市佳美光电电子有限公司


    Original     		PDF JM-S03943A-B 3943A 03943B JM-S03943A-B D-12 JM-S039

    JM-S039

    Abstract: No abstract text available
    Text: 深圳市佳美光电电子有限公司 产品规格书 JM-S03941A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 [email protected] 深圳市佳美光电电子有限公司


    Original     		PDF JM-S03941A-B 3941A 03941B JM-S039

    DP-12

    Abstract: JM-S039
    Text: 深圳市佳美光电电子有限公司 产品规格书 JM-S03941E-F DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 [email protected] 深圳市佳美光电电子有限公司


    Original     		PDF JM-S03941E-F DP-12 03941E 03941F DP-12 JM-S039

    3491C

    Abstract: JM-S03941C-D JM-S039
    Text: 深圳市佳美光电电子有限公司 产品规格书 JM-S03941C-D DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 [email protected] 深圳市佳美光电电子有限公司


    Original     		PDF JM-S03941C-D 3491C 3491D 3491C JM-S03941C-D JM-S039

    JM-S039

    Abstract: No abstract text available
    Text: 深圳市佳美光电电子有限公司 产品规格书 JM-S03943C-D DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 [email protected] 深圳市佳美光电电子有限公司


    Original     		PDF JM-S03943C-D 03943C 03943D JM-S039

    03942B

    Abstract: JM-S03942A-B JM-S039
    Text: 深圳市佳美光电电子有限公司 产品规格书 JM-S03942A-B DATA SHEET 制表 审核 制图 批准 编号 页数 日期 电话 0755-83937281,83937283 传真 0755-83937036 网址 Http://www.led-china.com 邮箱 [email protected] 深圳市佳美光电电子有限公司


    Original     		PDF JM-S03942A-B 3942A 03942B 03942B JM-S03942A-B JM-S039

    MOSFET SOT-23 marking code M2

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2

    5302D

    Abstract: No abstract text available
    Text: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make


    Original     		PDF DG428, DG429 DG429 DG428 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 5302D

    si1922

    Abstract: SI1922EDH
    Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1922EDH 2002/95/EC OT-363 SC-70 Si1922EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1922

    SQ2303ES

    Abstract: marking code 604 SOT23
    Text: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SQ2303ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2303ES* OT-23 SQ2303ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2303ES marking code 604 SOT23

    SQ2318ES

    Abstract: No abstract text available
    Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested


    Original     		PDF SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2318ES

    SQ2351ES

    Abstract: No abstract text available
    Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:


    Original     		PDF SQ2351ES O-236 OT-23) AEC-Q101 SQ2351ES OT-23 SQ2351ES-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    marking L4 mosfet sot23

    Abstract: SI2304
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304

    si2301

    Abstract: No abstract text available
    Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    Si2303CDS

    Abstract: No abstract text available
    Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 Si2303CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    SI2333DS-T1-E3

    Abstract: No abstract text available
    Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si2333DS O-236 OT-23) Si2333DS-T1-E3 Si2333DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    TP0610K-T1-E

    Abstract: TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3

    DG201BDQ-T1-E3

    Abstract: No abstract text available
    Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon


    Original     		PDF DG201B, DG202B DG202B DG201A, DG202. DG201B 2011/65/EU 2002/95/EC. DG201BDQ-T1-E3

    Si2315BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*


    Original     		PDF Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    SI1013CX

    Abstract: 71377
    Text: Si1013CX Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.760 at VGS = - 4.5 V - 0.45 1.040 at VGS = - 2.5 V - 0.40 1.5 at VGS = - 1.8 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1013CX 2002/95/EC SC-89 Si1013CX-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 71377

    SI1443EDH

    Abstract: marking code bt S1209
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		PDF Si1443EDH SC-70 Si1443EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code bt S1209

    N-Channel mosfet sot-363

    Abstract: No abstract text available
    Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)


    Original     		PDF Si1539CDL OT-363 SC-70 Si1539CDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 N-Channel mosfet sot-363

    si2329

    Abstract: SI2329DS
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329

    Untitled

    Abstract: No abstract text available
    Text: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization:


    Original     		PDF Si1926DL OT-363 SC-70 Si1926DL-T1-E3 Si1926DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A