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    S0918 Search Results

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    S0918 Price and Stock

    Pi Supply PIS-0918

    PICOBORG QUAD MOTOR CONTROLLER W
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    Essentra Components 12SWS0918

    SHOULDER WASHER .230 ID .450 OD
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    Panasonic Electronic Components EYG-S0918ZLX2

    THERM PAD 180MMX90MM GRAY
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    Ozdisan Elektronik EYG-S0918ZLX2
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    Samtec Inc PMSS-09-18-K-03.50-D-LUS

    .165" POWER MATE SINGLE ROW DISC
    Free Sample
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    Sager PMSS-09-18-K-03.50-D-LUS 1
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    Panasonic Electronic Components EYGS0918ZLX2

    Pyrolytic Graphite Sheet for IGBT Power Module - Bulk (Alt: EYG-S0918ZLX2)
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    Avnet Americas EYGS0918ZLX2 Bulk 8 Weeks 20
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    S0918 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S0918 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    S0918R Unknown Shortform Transistor PDF Datasheet Short Form PDF

    S0918 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiA517DJ

    Abstract: S09-1808
    Text: SPICE Device Model SiA517DJ Vishay Siliconix N-Channel and P-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized over


    Original     		PDF SiA517DJ 18-Jul-08 S09-1808

    Si3948DV

    Abstract: No abstract text available
    Text: Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3948DV 2002/95/EC Si3948DV-T1-E3 Si3948DV-T1-GE3 18-Jul-08

    IRFD9210

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original     		PDF IRFD9210, SiHFD9210 2002/95/EC 18-Jul-08 IRFD9210

    IRFD224

    Abstract: No abstract text available
    Text: IRFD224, SiHFD224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single D HVMDIP RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFD224, SiHFD224 18-Jul-08 IRFD224

    IRFD214

    Abstract: n mosfet low vgs
    Text: IRFD214, SiHFD214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration • Repetitive Avalanche Rated 2.0 RoHS* • End Stackable COMPLIANT


    Original     		PDF IRFD214, SiHFD214 2002/95/EC 18-Jul-08 IRFD214 n mosfet low vgs

    si4914b

    Abstract: si4914 Si4914BDY
    Text: SPICE Device Model Si4914BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4914BDY 18-Jul-08 si4914b si4914

    s0918

    Abstract: IRFD9220
    Text: IRFD9220, SiHFD9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V - 200 RDS(on) (Ω) 1.5 Qg (Max.) (nC) 15 Qgs (nC) 3.2 Qgd (nC) 8.4 Configuration RoHS* • For Automatic Insertion COMPLIANT • End Stackable • P-Channel


    Original     		PDF IRFD9220, SiHFD9220 2002/95/EC 18-Jul-08 s0918 IRFD9220

    IRFD220

    Abstract: SiHFD220-E3 IRFD220PBF
    Text: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRFD220, SiHFD220 2002/95/EC 18-Jul-08 IRFD220 SiHFD220-E3 IRFD220PBF

    Si7212DN

    Abstract: Si7212DN-T1-E3 Si7212DN-T1-GE3
    Text: Si7212DN Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.036 at VGS = 10 V 6.8 0.039 at VGS = 4.5 V 6.6 Qg (Typ.) 7 • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching


    Original     		PDF Si7212DN 2002/95/EC Si7212DN-T1-E3 Si7212DN-T1-GE3 18-Jul-08

    si8473

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 18-Jul-08 si8473

    Untitled

    Abstract: No abstract text available
    Text: Si7446BDP Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 19 0.010 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7446BDP 2002/95/EC Si7446BDP-T1-E3 Si7446BDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR426DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.0105 at VGS = 10 V 30a 0.0125 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR426DP 2002/95/EC SiR426DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR168DP 2002/95/EC SiR168DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3948DV 2002/95/EC Si3948DV-T1-E3 Si3948DV-T1-GE3 11-Mar-11

    SiR168DP-T1-GE3

    Abstract: No abstract text available
    Text: SiR168DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0044 at VGS = 10 V 40 0.0059 at VGS = 4.5 V 40 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR168DP 2002/95/EC SiR168DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.105 at VGS = 10 V ± 2.5 0.175 at VGS = 4.5 V ± 2.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3948DV 2002/95/EC Si3948DV-T1-E3 Si3948DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7772DP

    Abstract: si7772 SI7772DP-T1-GE3
    Text: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7772DP 2002/95/EC Si7772DP-T1-GE3 18-Jul-08 si7772

    Si4214DDY

    Abstract: SI4214DD si4214
    Text: New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8.5 0.023 at VGS = 4.5 V 8.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4214DDY 2002/95/EC Si4214DDY-T1-GE3 18-Jul-08 SI4214DD si4214

    IRLD014

    Abstract: No abstract text available
    Text: IRLD014, SiHLD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5 V Available • For Automatic Insertion 0.20 RoHS* Qg (Max.) (nC) 8.4 • End Stackable Qgs (nC) 2.6 • Logic-Level Gate Drive


    Original     		PDF IRLD014, SiHLD014 2002/95/EC 18-Jul-08 IRLD014

    SI4210

    Abstract: Si4210DY
    Text: New Product Si4210DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0355 at VGS = 10 V 6.5 0.044 at VGS = 4.5 V 5.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4210DY 2002/95/EC Si4210DY-T1-GE3 18-Jul-08 SI4210

    IRLD110

    Abstract: No abstract text available
    Text: IRLD110, SiHLD110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 6.1 • For Automatic Insertion Qgs (nC) 2.6 • End Stackable 3.3 • Logic-Level Gate Drive


    Original     		PDF IRLD110, SiHLD110 2002/95/EC 18-Jul-08 IRLD110

    s0918

    Abstract: d7c transistor marking N10
    Text: r Z Z SGS-THOMSON ^ 7 # MIDlSB§ ilLieTriBl iD©i S0918 SMALL SIGNAL NPN TRANSISTOR Type Marking S0918 N10 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . SMALL SIGNAL VHF AMPLIFICATION AND


    OCR Scan     		PDF S0918 OT-23 OT-23 s0918 d7c transistor marking N10

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF