TO-247 Package
Abstract: No abstract text available
Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements
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Original
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PDF
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IRFP26N60L,
SiHFP26N60L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TO-247 Package
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Untitled
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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irfp27n60k
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
11-Mar-11
irfp27n60k
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Untitled
Abstract: No abstract text available
Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP254,
SiHFP254
2002/95/EC
O-247AC
O-247AC
O-22hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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Original
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PDF
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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ic 91215
Abstract: No abstract text available
Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRFP260,
SiHFP260
O-247AC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
ic 91215
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S11074
Abstract: S11031 S11007 S11048 S11030 M83446 S11100 m83446/11 S11092 S11065
Text: S11000 Series Fixed Chip Inductors for Space Applications FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical flight and mission-essential ground
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S11000
MIL-PRF83446
MIL-STD-981,
MIL-STD-202,
S11074
S11031
S11007
S11048
S11030
M83446
S11100
m83446/11
S11092
S11065
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Y145
Abstract: IRFP260
Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRFP260,
SiHFP260
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Y145
IRFP260
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Untitled
Abstract: No abstract text available
Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRFP254,
SiHFP254
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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Original
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PDF
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP264,
SiHFP264
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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irfp260
Abstract: No abstract text available
Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRFP260,
SiHFP260
2002/95/EC
O-247AC
O-247AC
11-Mar-11
irfp260
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Untitled
Abstract: No abstract text available
Text: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive
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Original
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PDF
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IRFP31N50L,
SiHFP31N50L
2002/95/EC
O-247AC
11-Mar-11
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IRFP264
Abstract: No abstract text available
Text: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP264,
SiHFP264
2002/95/EC
O-247AC
O-247AC
11-Mar-11
IRFP264
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IRFP264
Abstract: No abstract text available
Text: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP264,
SiHFP264
2002/95/EC
O-247AC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFP264
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Untitled
Abstract: No abstract text available
Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP254,
SiHFP254
2002/95/EC
O-247AC
O-247AC
O-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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IRFP260
Abstract: No abstract text available
Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRFP260,
SiHFP260
O-247AC
2002/95/EC
11-Mar-11
IRFP260
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Untitled
Abstract: No abstract text available
Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements
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Original
|
PDF
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IRFP26N60L,
SiHFP26N60L
2002/95/EC
O-247AC
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: IRFP26N60L, SiHFP26N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V 0.21 Qg (Max.) (nC) 180 Qgs (nC) 61 Qgd (nC) Requirements
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Original
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PDF
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IRFP26N60L,
SiHFP26N60L
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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IRFP254
Abstract: No abstract text available
Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP254,
SiHFP254
2002/95/EC
O-247AC
11-Mar-11
IRFP254
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IRFP264
Abstract: No abstract text available
Text: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP264,
SiHFP264
2002/95/EC
O-247AC
11-Mar-11
IRFP264
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S11048
Abstract: No abstract text available
Text: IRFP254, SiHFP254 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.14 Qg (Max.) (nC) 140 Qgs (nC) 24 Qgd (nC) 71 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole
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Original
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PDF
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IRFP254,
SiHFP254
2002/95/EC
O-247AC
O-247AC
O-22trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
S11048
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Untitled
Abstract: No abstract text available
Text: IRFP27N60K, SiHFP27N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.18 Qg (Max.) (nC) 180 Qgs (nC) 56 Qgd (nC) 86 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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PDF
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IRFP27N60K,
SiHFP27N60K
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFP260, SiHFP260 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 230 Qgs (nC) 42 Qgd (nC) 110 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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PDF
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IRFP260,
SiHFP260
O-247AC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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